In accordance with various embodiments, an electron beam evaporator can comprise the following: a tubular target; an electron beam gun for producing at least one vapor source on a removal surface of the tubular target by means of an electron beam; wherein the removal surface is a ring-shaped axial end surface or a surface of the tubular target that extends conically or in a curved fashion from the free end edge.

A state variable including at least one physical quantity related to performance evaluation of film formation and film formation condition is observed, a reward for a determination result of the film formation condition is calculated based on the state variable, a function for determining the film formation condition from the state variable is updated based on the reward, the film formation condition under which the reward is obtained the most is determined, the film formation condition is at least one of a first parameter related to a vacuum evacuation system, a second parameter related to a heating and cooling system, a third parameter related to an evaporation source system, a fourth parameter related to a table system, and a fifth parameter related to a process gas system, and the physical quantity is a film quality characteristic, a mechanical characteristic, and a physical characteristic that are related to the film.

A film manufacturing apparatus includes a lamination unit that laminates a first layer at one side in a thickness direction of a long-length substrate film to produce a one-sided laminated film, and that laminates a second layer at the other side in the thickness direction of the one-sided laminated film to produce a double-sided laminated film; a conveyance unit; a marking unit; a measurement unit; a detection unit, disposed at an upstream side in the conveyance direction of the measurement unit; and an arithmetic unit that obtains physical properties of the first layer and the second layer based on the physical property at a first position in the one-sided laminated film and the physical property at a second position in the double-sided laminated film. The arithmetic unit defines, with a mark as a reference, a position substantially the same as the first position to be the second position.

A film manufacturing apparatus includes a lamination unit that laminates a first layer at one side in a thickness direction of a long-length substrate film to produce a one-sided laminated film, and that laminates a second layer at the other side in the thickness direction of the one-sided laminated film to produce a double-sided laminated film; a conveyance unit; a marking unit; a measurement unit; a detection unit, disposed at an upstream side in the conveyance direction of the measurement unit; and an arithmetic unit that obtains physical properties of the first layer and the second layer based on the physical property at a first position in the one-sided laminated film and the physical property at a second position in the double-sided laminated film. The arithmetic unit defines, with a mark as a reference, a position substantially the same as the first position to be the second position.

Various aspects of the present disclosure provide a medical device. The medical device includes a substrate. The medical device further includes a substantially transparent or translucent anti-stick coating disposed on a surface of the substrate. The anti-stick coating includes one or more fluorophores internally distributed in the anti-stick coating.

A method adjusts an output power of a power supply supplying electrical power to a plasma in a plasma chamber. The method includes: connecting the power supply to at least one electrode in the plasma chamber; transporting one or more substrates relative to the electrode using a substrate carrier; maintaining the plasma by the electrical power; processing the one or more substrates with the plasma; and adjusting the output power based on a parameter related to a distance between a surface of the electrode facing a carrier-substrate-assembly and a surface of the substrate-carrier-assembly facing the electrode.

The present disclosure provides a system and method for predicting wafer fabrication defects resulting from plasma processing of wafers in a plasma processing chamber. The system and method include processing electromagnetic signals emitted from residual compounds peeled from the chamber walls during the plasma processing of the wafers to indirectly determine the likelihood that the wafers are incurring fabrication processing defects during the plasma processing.

The present disclosure provides a system and method for predicting wafer fabrication defects resulting from plasma processing of wafers in a plasma processing chamber. The system and method include processing electromagnetic signals emitted from residual compounds peeled from the chamber walls during the plasma processing of the wafers to indirectly determine the likelihood that the wafers are incurring fabrication processing defects during the plasma processing.

A resistance measurement device for measuring sheet resistance of an electrically conductive film that is long in one direction includes a probe unit disposed to face the electrically conductive film; a scanning unit that allows the probe unit to scan in a cross direction crossing the one direction over both a conveyance region and a non-conveyance region of the electrically conductive film; and an arithmetic unit that calculates a sheet resistance of the electrically conductive film based on a voltage measured by the probe unit. The arithmetic unit has a memory that memorizes a reference voltage measured in the non-conveyance region, and corrects, based on the reference voltage, an actual voltage measured by allowing the probe unit to scan in the cross direction in the conveyance region.

A device may include one or more memories and one or more processors, communicatively coupled to the one or more memories, to receive design information, wherein the design information identifies desired values for a set of layers of an optical element to be generated during one or more runs; receive or obtain historic information identifying a relationship between a parameter for the one or more runs and an observed value relating to the one or more runs or the optical element; determine layer information for the one or more runs based on the historic information, wherein the layer information identifies run parameters, for the set of layers, to achieve the desired values; and cause the one or more runs to be performed based on the layer information.