Disclosed is process for producing a component of a nickel-based superalloy in which a semifinished part of the component is subjected to a solution heat treatment at a temperature from 1300° C. to 1350° C. and a precipitation heat treatment at a temperature range from 900° C. to 1150° C. The solution heat treatment and/or the precipitation heat treatment are carried out together with further processing of the semifinished part. Also disclosed is a process for treating a component of a nickel-based superalloy after use for some hundreds of hours at a use temperature of more than 500° C. by carrying out a reconditioning heat treatment in the temperature range from 1100° C. to 1280° C.

Certain example embodiments relate to techniques for improving the uniformity of, and/or conformance to a desired pattern for, metal island layers (MILs) formed on a substrate (e.g., a glass or other substrate), and/or associated products. Certain example embodiments form MILs using a laser or other energy source or magnetic field assisted technique, e.g., to compensate for non-uniformities that otherwise likely would result in the MIL diverging from its desired configuration. For example, a laser or other energy source may introduce heat onto a substrate, enable pulsed laser deposition, raster a target including the MIL metal to be deposited, raster a substrate where the MIL is to be formed, etc. These and/or other techniques may be used to enable the MIL to be formed on the substrate in a desired pattern, e.g., by compensating for implicit non-uniformities of the substrate and/or by selectively creating non-uniformities in how the MIL is formed.

Methods for fabricating at least one nanoparticle include providing one or more substrates and depositing a substance on the one or more substrates. At least one portion of the substance is heated or annealed so the at least one portion beads up on the one or more substrates due to cohesive forces of the substance being greater than adhesive forces between the substrate and the substance. In some methods, a pattern generation process is performed to define the at least one portion. A combination of a substance material for the substance and a substrate material for the one or more substrates may also be selected so that the at least one portion beads up into a predetermined shape. The substance may also be deposited on the one or more substrates with a sub-monolayer thickness or with gaps to further reduce a nanoparticle size.

An embodiment of the present disclosure provides a method of growing metal oxide nanowires by ion implantation, the method including the steps of: depositing a metal oxide thin film on a substrate; implanting ions into the metal oxide thin film; and heating the ion-implanted metal oxide thin film to grow metal oxide nanowires.

A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.

The invention to which this application relates is for the formation of a coating onto a surface of an article and, in particular, although not necessarily exclusively, to form a coating which has conductive characteristics in order for the purpose of use of the article to be achieved. In one embodiment, the article base to which the coating is applied is a fuel cell or plate for a fuel cell. The coating includes at least one layer and an external layer applied thereto, said external layer provide as a discontinuous layer formed of discrete portions. The invention also relates to the method of application of a coating having the required characteristics.

There is provided a semiconductor device including: a gate electrode; a channel layer arranged in a region directly below or directly above the gate electrode; a source electrode and a drain electrode arranged to be in contact with the channel layer; and a first insulating layer arranged between the gate electrode and the channel layer, the channel layer including a first oxide semiconductor, at least one of the source electrode and the drain electrode including a second oxide semiconductor, and the first oxide semiconductor and the second oxide semiconductor containing indium, tungsten and zinc. There is also provided a method for manufacturing the semiconductor device.

A coating system including a reflective cool down chamber with at least one arcuate wall; and an infrared lamp directed at the arcuate wall.

Disclosed in the present invention is an enzyme-free glucose detection chip, including: a substrate; a detection portion, disposed on an end surface of the substrate; a plurality of protrusions, disposed at the detection portion; a conductive layer, disposed on a surface of the substrate having the protrusions; and a plurality of gold nanoparticles, dispersed on surfaces of the protrusions. In the enzyme-free glucose detection chip disclosed in the present invention, protrusions having gold nanoparticles are used as electrodes, are structures on a micrometer scale and a nanometer scale, and can directly react with glucose without any glucose oxidase or/and any medium.

This disclosure provides systems, methods, and apparatus for tempering or chemically strengthening glass substrates having electrochromic devices fabricated thereon. In one aspect, an electrochromic device is fabricated on a glass substrate. The glass substrate is then tempered or chemically strengthened. The disclosed methods may reduce or prevent potential issues that the electrochromic device may experience during the tempering or the chemical strengthening processes, including the loss of charge carrying ions from the device, redistribution of charge carrying ions in the device, modification of the morphology of materials included in the device, modification of the oxidation state of materials included in the device, and the formation of an interfacial region between the electrochromic layer and the counter electrode layer of the device that impacts the performance of the device.