Patent classifications
C23C14/5806
Rare earth thin film magnet, process for producing same, and target for forming rare earth thin film magnet
The present invention provides a rare earth thin film magnet having Nd, Fe, and B as essential components, wherein the rare earth thin film magnet has a texture in which an α-Fe phase and a Nd.sub.2Fe.sub.14B phase are alternately arranged three-dimensionally, and each phase has an average crystal grain size of 10 to 30 nm. An object of this invention is to provide a rare earth thin film magnet having superior mass productivity and reproducibility and favorable magnetic properties, as well as to provide the production method thereof and a target for producing the thin film.
Off-angled heating of the underside of a substrate using a lamp assembly
Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.
Silver nanoparticles on conducting electrode as plasmonic scattering nanomaterial and related photovoltaic cells
A plasmonic scattering nanomaterial comprising a substrate layer, a metal oxide layer in continuous contact with the substrate layer and silver nanoparticles with a diameter of 25-300 nm deposited on the metal oxide layer is disclosed. The silver nanoparticles have a broad size distribution and interparticle distances such that the silver nanoparticles plasmonically scatter light throughout the metal oxide layer with a near electric field strength of 1-30 V/m when excited by a light source having a wavelength in the range of 300-500 nm and/or 1000-1200 nm. In addition, a method for producing the nanomaterial by sputter deposition is disclosed as well as an appropriate thin film plasmonic solar cell comprising the nanomaterial with a solar efficiency of at least 10%.
Systems and methods for locally reducing oxides
In the systems and methods for synthesizing a thin film with desired properties (e.g. magnetic, conductivity, photocatalyst, etc.), a metal oxide film may be deposited on a substrate. The metal oxide film may be achieved utilizing any suitable method. A reducing agent may be deposited before, after or both before and after the metal oxide layer. Oxygen may be removed or liberated from the deposited metal oxide film by low temperature local or global annealing. As a result of the annealing to remove oxygen, one or more portions of the metal oxide may be transformed into materials with desired properties. As a nonlimiting example, a metal oxide film may be treated to provide a magnetic multilayer film that is suitable for bit patterned media.
Thin Film Device Fabrication Methods and Apparatus
A deposition device for providing a thin film on a substrate. The device comprises a material source for providing at least one first metallic element which does not re-evaporate substantially from the substrate under particular growth conditions, at least one second metallic element or metal based molecule which does re-evaporate substantially from the substrate under the same growth conditions, and a component suitable for forming an at least one first compound with the at least one first metallic element and an at least one second compound with the at least one second metallic element or metal based molecule. The device comprises a controller configured to control the growth conditions, and the amounts of the at least one first metallic element, the at least one second metallic element or metal based molecule, and the component so as to obtain a substantially stoichiometric thin film.
COMPOSITE DIAMOND BODY AND COMPOSITE DIAMOND TOOL
A composite diamond body includes a diamond base material and a stable layer disposed on the diamond base material. The stable layer may have a thickness of 0.001 μm or more and less than 10 μm, and may include a plurality of layers. A composite diamond tool includes the composite diamond body. There are thus provided highly wear-resistant composite diamond body and composite diamond tool that are even applicable to mirror-finish planarization of a workpiece which reacts with diamond to cause the diamond to wear.
Hot Jet Assisted Systems and Methods
A heating device for heating the surface of a substrate. The heating device comprises a gas source comprising an inert material supply inert under the operating conditions of the heating device, the gas source being adapted for supplying a hot jet of a gas comprising at least elements of said inert material on the substrate. The gas source is adapted for heating the hot jet of the gas to a temperature above 1500° C.
METHOD FOR MANUFACTURING LIGHT EXTRACTION SUBSTRATE FOR ORGANIC LIGHT-EMITTING DIODE, LIGHT EXTRACTION SUBSTRATE FOR ORGANIC LIGHT-EMITTING DIODE, AND ORGANIC LIGHT-EMITTING DIODE INCLUDING SAME
The present invention relates to a method for manufacturing a light extraction substrate for an organic light-emitting diode and, more specifically, to a method for manufacturing a light extraction substrate for an organic light-emitting diode, which can improve light extraction efficiency of an organic light-emitting diode and can also remarkably reduce a manufacturing process, manufacturing costs, and manufacturing time. To this end, the present invention provides a method for manufacturing a light extraction substrate for an organic light-emitting diode, the method comprising: an ion injection step of injecting, into the inside of the base material, an ion from one side of a base material arranged on a transparent electrode of an organic light-emitting diode, so as to form an ion injection layer inside the base material; and a heat treatment step of forming, inside the base material, a pore layer having a plurality of pores having a different refractive index from that of the base material, through the application of thermal energy to the ion injection layer, wherein the plurality of pores are induced through the gasification of the ion.
REFLECTIVE MASK BLANK, METHOD FOR MANUFACTURING SAME, REFLECTIVE MASK, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.
The present invention provides a reflective mask blank for EUV lithography in which a conductive underlying film, a multilayer reflective film that reflects exposure light, and an absorber film that absorbs exposure light are layered on a substrate, wherein the conductive underlying film is a single-layer film made of a tantalum-based material or a ruthenium-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film, or the conductive underlying film is a multilayer film including a layer of a tantalum-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film and a layer of a conductive material that is formed between the layer of the tantalum-based material and the substrate. The present invention also provides a reflective mask manufactured using the reflective mask blank. Furthermore, a semiconductor device is manufactured using the reflective mask.
SAPPHIRE THIN FILM COATED SUBSTRATE
A method to transfer a layer of harder thin film substrate onto a softer, flexible substrate. In particular, the present invention provides a method to deposit a layer of sapphire thin film on to a softer and flexible substrate e.g. quartz, fused silica, silicon, glass, toughened glass, PET, polymers, plastics, paper and fabrics. This combination provides the hardness of sapphire thin film to softer flexible substrates.