A system and method for treating a cavity comprises arranging a niobium structure in a coating chamber, the coating chamber being arranged inside a furnace, coating the niobium structure with tin thereby forming an Nb.sub.3Sn layer on the niobium structure, and doping the Nb.sub.3Sn layer with nitrogen, thereby forming a nitrogen doped Nb.sub.3Sn layer on the niobium structure.

An oxide superconducting wire includes a superconducting laminate including an oxide superconducting layer disposed, either directly or indirectly, on a substrate, and a stabilization layer which is a Cu plating layer covering an outer periphery of the superconducting laminate. An average crystal grain size of the Cu plating layer is 3.30 μm or more and equal to or less than a thickness of the Cu plating layer.

An oxide superconducting wire includes a superconducting laminate including an oxide superconducting layer disposed, either directly or indirectly, on a substrate, and a stabilization layer which is a Cu plating layer covering an outer periphery of the superconducting laminate, and a Vickers hardness of the Cu plating layer is in the range of 80 to 190 HV.

A method of mask-free printing of dry nanoparticles, the method comprising generating a dry nanoparticle stream from a feedstock material in an atmospheric gas flow using a laser ablation system at atmospheric pressure, the dry nanoparticle stream uncontaminated by a fluidic carrier medium, wherein the dry nanoparticles uncontaminated by a fluidic carrier medium are directed to a substrate through a nozzle by the gas flow in a dry state and adhere to the substrate.

Embodiments described herein relate to a method of fabricating a perovskite film device. The method includes heating and degassing a substrate within a processing system; depositing a first perovskite film layer over a surface of the substrate using multi-cathode sputtering deposition within a processing chamber; depositing a second perovskite film layer over the first perovskite film layer using multi-cathode sputtering deposition within a processing chamber; and annealing the substrate with the first perovskite film layer and second perovskite film layer disposed thereon. The first perovskite film layer includes a first perovskite material. The second perovskite film layer includes a second perovskite material.

Embodiments of the present disclosure relate to photovoltaic devices, CIGS containing films, and methods of manufacturing CIGS containing films and photovoltaic devices to improve quantum efficiency, reduce interface charges, electron losses, and electron re-combinations. The CIGS layers in the photovoltaic devices described herein may be deposited using physical vapor deposition, followed by in-situ oxygen annealing, and further followed by deposition of a cap layer over the CIGS layer without subjecting the CIGS layer to an air break.

Methods for controlled microstructure creation utilize seeding of amorphous layers prior to annealing. Seed crystals are formed on an amorphous layer or layers. The material, size, and spacing of the seed crystals may be varied, and multiple seed layers and/or amorphous layers may be utilized. Thereafter, the resulting assembly is annealed to generate a crystalline microstructure. Via use of these methods, devices having desirable microstructural properties are enabled.

The present disclosure relates to a preparing method of two-dimensional materials with a controlled number of layer including depositing a metal thin film on a surface of a bulk material; exfoliating a two-dimensional material from the surface of the bulk material together with the metal thin film; and transferring the two-dimensional material onto a substrate, in which the number of layers of the two-dimensional material to be exploited is controlled by controlling an internal stress of the metal thin film.

A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.

Equipment for manufacturing a metal strip coated by a process that includes vacuum-depositing a layer of an oxidizable metal or an oxidizable metal alloy on a metal strip precoated with zinc or with a zinc alloy, then coiling the coated metal strip, then oxidizing a surface of the metal strip coated with the oxidizable metal or oxidizable metal alloy and treating the oxidized wound coil with a static diffusion treatment to obtain a strip having a coating that includes, in an upper portion, a layer of an alloy formed by diffusion of the oxidizable metal or the oxidizable metal alloy in all or part of the zinc or zinc alloy layer. The equipment includes a device for galvanizing the metal strip, a vacuum deposition coating device, and a static heat treatment device operating in a controlled atmosphere.