A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

A method for manufacturing a semiconductor device is provided. In the method, impurities contained in a first layer formed on a substrate are removed by heating the first layer. On the first layer, a second layer is formed containing a component that forms a substance that is able to vaporize by reacting with the impurities.

A lift hoop is provided which includes a frame having a central opening, and a plurality of wafer support structures disposed on the frame. Each of the plurality of wafer support structures includes a base which is attached to the frame, and fingers which are mounted with threaded fasteners to the base and which extends from the base in the direction of the central opening. Each of the plurality of fingers is equipped with a protrusion (bump) upon which a wafer sits, and a stop. The stop is spaced apart from the protrusion. The stop has a non-planar surface which faces the central opening, and contains a point that forms the shortest distance between the stop and the protrusion.

A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

A heat shield structure for a substrate support in a substrate processing system includes an outer shield configured to surround a stem of the substrate support. The outer shield is further configured to define an inner volume between the outer shield and an upper portion of the stem and a lower surface of the substrate support and a vertical channel between the outer shield and a lower portion of the stem of the substrate support. The outer shield includes a cylindrical portion, a first lateral portion extending radially outward from the cylindrical portion, an angled portion extending radially outward and upward from the first lateral portion, and a second lateral portion extending radially outward from the angled portion.

Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.

A method for forming a semiconductor structure is provided. The method includes forming a first material and a second material on a semiconductor substrate. The first material is different from the second material. The method also includes heating the first material to a first temperature and the second material to a second temperature with a laser beam. The first temperature is different from the second temperature. The method also includes depositing a third material on the first material.

In various embodiments, evaporation sources for deposition systems are heated and/or cooled via a fluid-based thermal management system.

Provided is a method for manufacturing a group III nitride semiconductor substrate includes a substrate preparation step S10 of preparing a sapphire substrate, a heat treatment step S20 of performing a heat treatment on the sapphire substrate, a pre-flow step S30 of supplying a metal-containing gas over the sapphire substrate, a buffer layer forming step S40 of forming a buffer layer over the sapphire substrate under growth conditions of a growth temperature of 800° C. or higher and 950° C. or lower and a pressure of 30 torr or more and 200 torr or less, and a growth step S50 of forming a group III nitride semiconductor layer over the buffer layer under growth conditions of a growth temperature of 800° C. or higher and 1025° C. or lower, a pressure of 30 torr or more and 200 torr or less, and a growth speed of 10 μm/h or more.

There is provided a film-forming apparatus and a film-forming method. The film-forming apparatus, in a first period, sets the second heater to a temperature T1 at which no film is formed on a substrate disposed on the mounting stand without supplying a precursor gas into the process container, in a second period, sets the second heater to a temperature T2 at which no film is formed on the substrate and supplies a precursor gas into the process container from the precursor gas supply pipe, in a third period, sets the second heater to a film-forming temperature T3, and in the first to third periods, sets the first heater to a temperature T4 at which no film is formed on a periphery of a gas supply port of the precursor gas supply pipe.