A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

Embodiments described herein relate to a thermal chamber utilized in the processing of display substrates. The thermal chamber may be part of a larger processing system configured to manufacture OLED devices. The thermal chamber may be configured to heat and cool masks and/or substrates utilized in deposition processes in the processing system. The thermal chamber may include a chamber body defining a volume sized to receive one or more cassettes containing a plurality of masks and/or substrates. Heaters coupled to the chamber body within the volume may be configured to controllably heat masks and/or substrates prior to deposition processes and cool the masks and/or substrates after deposition processes.

A substrate processing a technology including: a substrate holder; a tubular reactor that houses the substrate holder; an inlet flange connected to the tubular reactor including a plurality of gas introduction ports; a lid that closes a lower opening of the inlet flange in a manner such that the substrate holder can be carried in and out; heater elements disposed along the outer peripheral surface of the inlet flange while avoiding the gas introduction ports; temperature sensors thermally coupled to the inlet flange or any heater element and adapted to detect temperatures; and a temperature controller that divides of the heater elements into groups and controls power supply to the respective heater elements independently for each of the groups based on temperatures detection temperatures detected by the temperature sensors.

Embodiments disclosed herein include to a component support for use in coating chamber components via chemical vapor deposition (CVD). The component support includes contact rods configured to contact chamber components at fixture points located on the backside of the chamber components. The component supports are configured to support the chamber components in the processing volume with minimal contact of the chamber components. The fixture points on the backside reduce exposure of the fixture points to reactant gases when the chamber components are installed.

A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<5.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.

There is provided a group III nitride semiconductor substrate (free-standing substrate (30)) that is formed of a group III nitride semiconductor crystal and has a thickness of 300 m or more and 1000 m or less. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A difference in a half width of an X-ray rocking curve (XRC) measured by making X-rays incident on each of the first and second main surfaces in parallel to an m axis of the group III nitride semiconductor crystal is 500 arcsec or less.

The system and method includes the suspension of a free-standing carbon article within a reaction chamber, the introduction of the chemical precursor in a reaction environment within the chamber, and heating of the carbon article in the presence of the chemical precursor leading to deposition in a site-specific manner.

A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

A coating system for coating an interior surface of a housing comprising: first and second closures engaging first and second ends, respectively, of the housing to provide an enclosed volume; first and second flow lines coupled to the first and second closures, respectively, the first flow line and/or the second flow line connected to an inert gas source; a reactant gas source(s) comprising a reactant gas and coupled to the first and/or second flow line; and a controller in electronic communication with the reactant gas and inert gas sources, and configured to control flow of inert gas into the enclosed volume, and counter current injection of reactant gas from the reactant gas source(s) into the enclosed volume whereby introduction of pulse(s) of the reactant gas into the enclosed volume are separated by introduction of inert gas into the enclosed volume, and coating layer(s) are deposited on the interior surface.