Generally, examples described herein relate to methods and processing systems for forming isolation structures (e.g., shallow trench isolations (STIs)) between fins on a substrate. In an example, fins are formed on a substrate. A liner layer is conformally formed on and between the fins. Forming the liner layer includes conformally depositing a pre-liner layer on and between the fins, and densifying, using a plasma treatment, the pre-liner layer to form the liner layer. A dielectric material is formed on the liner layer.

Generally, examples described herein relate to methods and processing systems for forming isolation structures (e.g., shallow trench isolations (STIs)) between fins on a substrate. In an example, fins are formed on a substrate. A liner layer is conformally formed on and between the fins. Forming the liner layer includes conformally depositing a pre-liner layer on and between the fins, and densifying, using a plasma treatment, the pre-liner layer to form the liner layer. A dielectric material is formed on the liner layer.

In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.

In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Methods for depositing boron-containing films on a substrate are described. The substrate is exposed to a boron precursor and a plasma to form the boron-containing film (e.g., elemental boron, boron oxide, boron carbide, boron silicide, boron nitride). The exposures can be sequential or simultaneous. The boron-containing films are selectively deposited on one material (e.g., SiN or Si) rather than on another material (e.g., silicon oxide).

In some examples, an exclusion ring locates a substrate on a substrate-support assembly in a processing chamber. An example exclusion ring comprises an inner edge portion to cover an edge of a substrate in the processing chamber and an outer edge portion to support the exclusion ring on the substrate support assembly in the processing chamber. The outer edge portion may include an outer edge of the exclusion ring. A separation zone extending between the inner edge portion and the outer edge of the exclusion ring includes an undercut in an undersurface of the exclusion ring. In some examples, a cooling gas is directed at the exclusion ring while the exclusion ring is located at a station or during an indexing operation performed by the exclusion ring within a processing tool.

In some examples, an exclusion ring locates a substrate on a substrate-support assembly in a processing chamber. An example exclusion ring comprises an inner edge portion to cover an edge of a substrate in the processing chamber and an outer edge portion to support the exclusion ring on the substrate support assembly in the processing chamber. The outer edge portion may include an outer edge of the exclusion ring. A separation zone extending between the inner edge portion and the outer edge of the exclusion ring includes an undercut in an undersurface of the exclusion ring. In some examples, a cooling gas is directed at the exclusion ring while the exclusion ring is located at a station or during an indexing operation performed by the exclusion ring within a processing tool.

Method and systems are presented for authentication of precious stones, according to their natural ID and/or predetermined markings created in the stones, based on unique characteristic radiation response of the stone to predetermined primary radiation.