In an aspect, a functional, a conformal surface layer coating on an internal surface of pores of a porous substrate may be formed via exposure to gas streams of precursor molecules in an atomic-layer deposition (ALD) reactor. In another aspect, a functional surface layer coating on particles of a powder (or particle powder) may be formed via exposure to gas streams of precursor molecules in an ALD reactor. In another aspect, an ALD reactor system may be configured with mechanisms for supplying gas streams of precursor molecules to form the conformal surface layer(s). In another aspect, the porous electrode(s) and/or particle(s) with the conformal surface coating(s) may be made part of a Li-ion battery cell, which in turn be made part of a Li-ion battery module or Li-ion battery pack.

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Method and systems are presented for authentication of precious stones, according to their natural ID and/or predetermined markings created in the stones, based on unique characteristic radiation response of the stone to predetermined primary radiation.

An exemplary method may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The method may also include forming a plasma within the processing region of the semiconductor processing chamber from the boron-containing precursor. The method may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The boron-containing material may include greater than 50% of boron. In some embodiments, the boron-containing material may include substantially all boron. In some embodiments, the method may further include delivering at least one of a germanium-containing precursor, an oxygen-containing precursor, a silicon-containing precursor, a phosphorus-containing precursor, a carbon-containing precursor, and/or a nitrogen-containing precursor to the processing region of the semiconductor processing chamber. The boron-containing material may further include at least one of germanium, oxygen, silicon, phosphorus, carbon, and/or nitrogen.

An exemplary method may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The method may also include forming a plasma within the processing region of the semiconductor processing chamber from the boron-containing precursor. The method may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The boron-containing material may include greater than 50% of boron. In some embodiments, the boron-containing material may include substantially all boron. In some embodiments, the method may further include delivering at least one of a germanium-containing precursor, an oxygen-containing precursor, a silicon-containing precursor, a phosphorus-containing precursor, a carbon-containing precursor, and/or a nitrogen-containing precursor to the processing region of the semiconductor processing chamber. The boron-containing material may further include at least one of germanium, oxygen, silicon, phosphorus, carbon, and/or nitrogen.

Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the silicon-containing precursor and the boron-containing precursor. The dopant-containing precursor may include one or more of carbon, nitrogen, oxygen, or sulfur. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The silicon-and-boron material may include greater than or about 1 at. % of a dopant from the dopant-containing precursor.

A method of forming a boron-based film includes forming the boron-based film mainly containing boron on a substrate by plasma CVD using plasma of a processing gas including a boron-containing gas; and controlling film stress of the formed boron-based film by adjusting a process parameter.

The invention provides process for producing a stable Si or Ge electrode structure comprising cycling a Si or Ge nanowire electrode until a structure of the Si nanowires form a continuous porous network of Si or Ge ligaments.

The invention provides process for producing a stable Si or Ge electrode structure comprising cycling a Si or Ge nanowire electrode until a structure of the Si nanowires form a continuous porous network of Si or Ge ligaments.