Processes and apparatus are described for atmospheric pressure plasma jet deposition onto a substrate. The process comprises feeding a solution comprising a dissolved metal precursor into a plasma jet. The dissolved metal precursor comprises a precursor metal selected from Groups 2 to 16, with the proviso that the precursor metal does not comprise Mn. The plasma jet is directed towards a surface of the substrate such that material from the plasma jet becomes deposited onto the surface of the substrate. The process provides a means to manufacture conductive, semiconducting or insulating deposits on a substrate in a material-efficient manner without the need for high-temperature post-treatment steps.

A gas management method includes: heating a raw material container that accommodates a raw material, by a heater, thereby generating a vaporized raw material gas; supplying the vaporized raw material gas together with a carrier gas to a processing container that accommodates a substrate, thereby performing a processing on the substrate; and controlling the heater based on a weight of the substrate after the processing on the substrate.

A gas management method includes: heating a raw material container that accommodates a raw material, by a heater, thereby generating a vaporized raw material gas; supplying the vaporized raw material gas together with a carrier gas to a processing container that accommodates a substrate, thereby performing a processing on the substrate; and controlling the heater based on a weight of the substrate after the processing on the substrate.

A system and method provides a more precise mole delivery amount of a process gas, for each pulse of a pulse gas delivery, by measuring a concentration of the process gas and controlling the amount of gas mixture delivered in a pulse of gas flow based on the received concentration of the process gas. The control of mole delivery amount for each pulse can be achieved by adjusting flow setpoint, pulse duration, or both.

In some examples, a liquid precursor vaporizer comprises an inlet, an outlet, and a first vaporizer core, the first vaporizer core including a plurality of nested cells defining a plurality of tortuous paths through which a liquid precursor can pass in a path between the inlet and the outlet of the liquid precursor vaporizer.

In some examples, a liquid precursor vaporizer comprises an inlet, an outlet, and a first vaporizer core, the first vaporizer core including a plurality of nested cells defining a plurality of tortuous paths through which a liquid precursor can pass in a path between the inlet and the outlet of the liquid precursor vaporizer.

In a process chamber connected with a process roughing pump via a pump foreline, pumping from the process chamber to the foreline ammonia and a deposition precursor, introducing into the foreline hydrogen fluoride gas to react with the ammonia to form ammonium fluoride, and maintaining the process roughing pump and pump foreline at at least the ammonium fluoride sublimation temperature during the pumping provides ammonia abatement for improved roughing pump performance.

In a process chamber connected with a process roughing pump via a pump foreline, pumping from the process chamber to the foreline ammonia and a deposition precursor, introducing into the foreline hydrogen fluoride gas to react with the ammonia to form ammonium fluoride, and maintaining the process roughing pump and pump foreline at at least the ammonium fluoride sublimation temperature during the pumping provides ammonia abatement for improved roughing pump performance.

A method for preparing an oxygen-free passivated titanium or titanium-alloy powder product by means of gas-solid fluidization is provided. The new method includes placing the metal halide and the titanium powder which meet formula requirements into a gasifier and a fluidized bed reactor respectively; heating the gasifier to gasify the metal halide, and introducing dry argon and halide gas into the fluidized bed reactor; opening the fluidized bed, heating the fluidized bed, fluidizing the titanium powder after the introduction of the argon and the metal halide gas, and cooling the product to obtain the titanium powder subjected to oxygen-free passivation using metal chloride; molding the oxygen-free passivated titanium powder into a green body with powder metallurgy technology; and sintering the green body in vacuum or argon atmosphere according to the molding technology, and after temperature rise treatment, performing a densification sintering operation to obtain a high-performance titanium product component.

Provided is a solid vaporization/supply system of metal halide for thin film deposition that reduces particle contamination. The system includes a vaporizable source material container for storing and vaporizing a metal halide and buffer tank coupled with the vaporizable source material container. The vaporizable source material container includes a container main body with a container wall; a lid body; fastening members; and joint members, wherein the container wall is configured to have a double-wall structure composed of an inner wall member and outer wall member, which allows a carrier gas to be led into the container main body via its space. The container wall is fabricated of 99 to 99.9999% copper, 99 to 99.9996% aluminum, or 99 to 99.9996% titanium, and wherein the container main body, the lid body, the fastening members, and the joint members are treated by fluorocarbon polymer coating and/or by electrolytic polishing.