A transfer chamber includes a monolithic chamber body, a transfer robot configured to pass substrates between a factory interface and a processing module in a substrate processing system, a load lock chamber station, a shutter station, a pre-clean chamber station, and a process chamber station integrated within the monolithic chamber body, and a plurality of slit valves integrated within the monolithic chamber body. The plurality of slit valves are configured to open and close the load lock chamber station, the pre-clean chamber station, and the process chamber station each from the shutter station such that the load lock chamber station, the pre-clean chamber station, and the process chamber station maintain respective vacuum pressures.

The present application discloses a new type of deposition source, where individual sources are placed in a substantial closed loop. The closed polygon deposition sources have no end in circumference and enable better deposition uniformity. A closed loop deposition sources minimize the edge effects in sputtering, chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) and increase deposition material utilization.

The present application discloses a new type of deposition source, where individual sources are placed in a substantial closed loop. The closed polygon deposition sources have no end in circumference and enable better deposition uniformity. A closed loop deposition sources minimize the edge effects in sputtering, chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) and increase deposition material utilization.

A method of coating a flexible substrate in a roll-to-roll deposition system is described. The method includes unwinding the flexible substrate from an unwinding roll, the flexible substrate having a first coating on a first main side thereof; measuring a lateral positioning of the first coating while guiding the flexible substrate to a coating drum; adjusting a lateral position of the flexible substrate on the coating drum depending on the measured lateral positioning of the first coating; and depositing a second coating on the flexible substrate, particularly on a second main side of the flexible substrate opposite the first main side. Further described is a vacuum deposition apparatus for conducting the methods described herein.

A method of coating a flexible substrate in a roll-to-roll deposition system is described. The method includes unwinding the flexible substrate from an unwinding roll, the flexible substrate having a first coating on a first main side thereof; measuring a lateral positioning of the first coating while guiding the flexible substrate to a coating drum; adjusting a lateral position of the flexible substrate on the coating drum depending on the measured lateral positioning of the first coating; and depositing a second coating on the flexible substrate, particularly on a second main side of the flexible substrate opposite the first main side. Further described is a vacuum deposition apparatus for conducting the methods described herein.

An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

An apparatus and method for forming a substrate web track with a repeating pattern into a reaction space of a deposition reactor by moving a first set of support rolls in relation to a second set of support rolls.