A method for producing patterned metallic coatings includes an initiator composition having at least one active substance being added to a substrate. A precursor composition including at least one precursor compound for a metallic layer is applied to the initiator composition coating. A metallic layer is then deposited by the active substance. At least one composition is applied as an emulsion in order to obtain a patterning of the resultant metallic layer.

A new BiVO.sub.4-laminate manufacturing method and BiVO.sub.4 laminate are provided. A bismuth-vanadate laminate is manufactured as follows: a substrate that can be heated by microwaves is disposed inside a precursor solution containing a vanadium salt and a bismuth salt, microwave-activated chemical bath deposition (MW-CBD) is used to form a bismuth-vanadate layer on the substrate, and a firing process is performed as necessary. A bismuth-vanadate laminate manufactured in this way is suitable for use as a photocatalyst or photoelectrode.

The invention relates to a process for the manufacture of a metal, ceramic or composite part or of a supported metal, ceramic or composite microstructure by laser irradiation starting from metal oxalates, and also to the part and the microstructure obtained by said process, and to their uses.

A solvent-free method for fabricating conductors is disclosed. A thick patterned layer up to 13 microns containing metal precursor and reducing agent precursor are initially deposited onto a substrate using laser printing technology. The deposited patterned precursor materials are then irradiated with a newly developed high energy intense pulsed light (IPL) system in order to transform the deposited materials to thick conductive metal patterns. The easy metallization of printed patterns makes this invention an especially effective method for massive production of flexible printed circuits.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A conductive nanowire film having a high aspect-ratio metal is described. The nanowire film is produced by inducing metal reduction in a concentrated surfactant solution containing metal precursor ions, a surfactant and a reducing agent. The metal nanostructures demonstrate utility in a great variety of applications.

An ink composition including a metal salt amine complex; wherein the metal salt amine complex is formed from a metal salt and an amine; a compound selected from the group consisting of a stable free radical, a photoacid generator, and a thermal acid generator; and an optional solvent. A process including forming a metal salt amine complex; adding a compound selected from the group consisting of a stable free radical, a photoacid generator, and a thermal acid generator to the metal salt amine complex to form an ink. A process including providing an ink composition comprising a metal salt amine complex, wherein the metal salt amine complex is formed from a metal salt and an amine; a compound selected from the group consisting of a stable free radical, a photoacid generator, and a thermal acid generator; and an optional solvent; depositing the ink composition onto a substrate to form deposited features; and treating the deposited features on the substrate to form conductive features on the substrate.

The present invention relates to a nanostructure formation device using microwaves and, more specifically, to a novel structure of a nanostructure formation device using microwaves, the device being capable of introducing a solution process factor to a conventional nanostructure formation device using microwaves, so as to stably manufacture a nanostructure by using a microwave while consistently maintaining the concentration of a formation solution and the process conditions for it when the nanostructure is formed through a solution process.

There is described a process for depositing carbon on a surface, comprising, while contacting a mixture of CO.sub.2 and Br.sub.2 with a polar substrate presenting apposed surfaces, exposing a sufficient area of said mixture in the region of said apposed surfaces to light of sufficient intensity and frequency to result in deposition of carbon on at least some of said apposed surfaces. Other embodiments are also described.

A gas barrier film includes, in order, a film substrate, an organic layer, and a silica layer, in which the silica layer includes a silica polymer having at least a covalent bond between a silicon atom and an oxygen atom, and a concentration of carbon atoms of the organic layer is 50% or more. A method of producing a gas barrier film includes forming an organic layer having a concentration of carbon atoms of 50% or more on a film substrate, applying a coating liquid including a silicon compound to the organic layer to form a layer including the silicon compound, and irradiating the layer including the silicon compound with vacuum ultraviolet rays to form a silica layer including a silica polymer having at least a covalent bond between a silicon atom and an oxygen atom.