A conductive composition that comprises a branched metal carboxylate and one or more solvents. The solvents may be an aromatic hydrocarbon solvent. In embodiments, the branched metal carboxylate is a silver carboxylate. The conductive composition may be used in forming conductive features on a substrate, including by inkjet printing, screen printing or offset printing.

The present invention relates to a novel process for the preparation of printable, high-viscosity oxide media, and to the use thereof in the production of solar cells.

Processes for obtaining a semiconductor nanodevice comprising a substrate, onto which patterned metal-oxide thin films having semiconductor properties are deposited, are provided, as well as semiconductor devices comprising them. The present invention belongs to the field of semiconductor nanodevices.

A method for providing electrically-conductive silver-containing metal in a thin film or one or more thin film patterns on a substrate. Electrically-conductive metallic silver is provided from a non-hydroxylic-solvent soluble silver complex represented by the following formula (I):
(Ag.sup.+).sub.a(L).sub.b(P).sub.c (I)
wherein L represents an -oxy carboxylate; P represents a 5- or 6-membered N-heteroaromatic compound; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is 1, b is 1, and when a is 2, b is 2. A photosensitizer can also be present. The reducible silver ions in the photosensitive thin film or photosensitive thin film pattern can be photochemically converted to electrically-conductive metallic silver in the thin films or thin film patterns by irradiation with electromagnetic radiation having a wavelength within the range of at least 150 nm and up to and including 700 nm.

Provided is a barrier film, comprising: a base layer; and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, the first region has a thickness of 50 nm or more, and the ratio (d1/d2) of the thickness (d1) of the first region to the thickness (d2) of the second region is 2 or less, the barrier film having excellent barrier properties and optical properties. The barrier film can be used for electronic products sensitive to moisture or the like.

Provided is a barrier film, comprising a base layer and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer. The barrier film has excellent barrier properties and optical properties and can be used for electronic products which are sensitive to moisture and the like.

A method for forming an interconnect structure includes forming an insulating layer on a substrate. A damascene opening is formed through a thickness portion of the insulating layer. A diffusion barrier layer is formed to line the damascene opening. A conductive layer is formed overlying the diffusion barrier layer to fill the damascene opening. A carbon-containing metal oxide layer is formed on the conductive layer and the insulating layer.

A hierarchical porous material contains primary pore aggregates. The primary pore aggregates combine to form the secondary pore aggregates. The secondary pore aggregates connect to each other formed the hierarchical porous material. There are primary pores on the primary pore aggregates wherein the diameter of primary pore is 5-500 nm. There are secondary pores on the secondary pore aggregates wherein the diameter of secondary pore is 1-5 m. The hierarchical porous material is used as oxygen reduction reaction (ORR) catalysts or photocatalysts having a significantly improved catalytic activity.

A method for synthesizing a copper-silver alloy includes an ink preparation step, a coating step, a crystal nucleus formation step and a crystal nucleus synthesis step. In the ink preparation step, a copper salt particle, an amine-based solvent, and a silver salt particle are mixed, thereby preparing a copper-silver ink. In the coating step, a member to be coated is coated with the copper-silver ink. In the crystal nucleus formation step, at least one of a crystal nucleus of copper having a crystal grain diameter of 0.2 ?m or less and a crystal nucleus of silver having a crystal grain diameter of 0.2 ?m or less is formed from the copper-silver ink. In the crystal nucleus synthesis step, the crystal nucleus of copper and the crystal nucleus of silver are synthesized.

A method for providing electrically-conductive silver-containing metal in a thin film or one or more thin film patterns on a substrate. Electrically-conductive metallic silver is provided from a non-hydroxylic-solvent soluble silver complex represented by the following formula (I):

(Ag.sup.+).sub.a(L).sub.b(P).sub.c (I)

wherein L represents an -oxy carboxylate; P represents an oxime compound; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is 1, b is 1, and when a is 2, b is 2. A photosensitizer can also be present. The reducible silver ions in the photosensitive thin film or photosensitive thin film pattern can be photochemically converted to electrically-conductive metallic silver in the thin films or thin film patterns by irradiation with electromagnetic radiation having a wavelength within the range of at least 150 nm and up to and including 700 nm.