A process for continuous manufacturing of steel strips for packaging coated with a passivation layer is provided. The layer is an aqueous passivation solution, the thickness of which is less than 3 ?m and the viscosity of which is less than 1.5.Math.10.sup.?3 Pa.Math.s at 20? C., and is deposited on one of the faces of the strip. This depositing is carried out by a transfer roller in contact with the strip and with a second coating roller, the surface of which has a plurality of hexagonally shaped cells, the line count of which is between 50 and 200 lines per centimeter, and the total volume of which is between 5.Math.10.sup.?6 and 10.Math.10.sup.?6 m.sup.3 per square meter of roller surface. The coating roller is fed with aqueous passivation solution by dipping in a tank equipped with wiping means and the strip runs at a speed greater than or equal to 400 m/m. An apparatus for implementation of the process is also provided.

A process for continuous manufacturing of steel strips for packaging coated with a passivation layer is provided. The layer is an aqueous passivation solution, the thickness of which is less than 3 ?m and the viscosity of which is less than 1.5.Math.10.sup.?3 Pa.Math.s at 20? C., and is deposited on one of the faces of the strip. This depositing is carried out by a transfer roller in contact with the strip and with a second coating roller, the surface of which has a plurality of hexagonally shaped cells, the line count of which is between 50 and 200 lines per centimeter, and the total volume of which is between 5.Math.10.sup.?6 and 10.Math.10.sup.?6 m.sup.3 per square meter of roller surface. The coating roller is fed with aqueous passivation solution by dipping in a tank equipped with wiping means and the strip runs at a speed greater than or equal to 400 m/m. An apparatus for implementation of the process is also provided.

A highly reactive conversion coating chemistry is used during CAVF processing of high hardness steel alloys such as AMS 6509 and AMS 6517 steel alloys. This chemistry produces a hard, thin, black conversion coating that is not fully rubbed off by the media during the CAVF process. Distressed material regions on the surface of the alloys are not susceptible to forming the conversion coating and remain white. Visual inspection for the presence of such regions is facilitated.

A highly reactive conversion coating chemistry is used during CAVF processing of high hardness steel alloys such as AMS 6509 and AMS 6517 steel alloys. This chemistry produces a hard, thin, black conversion coating that is not fully rubbed off by the media during the CAVF process. Distressed material regions on the surface of the alloys are not susceptible to forming the conversion coating and remain white. Visual inspection for the presence of such regions is facilitated.

A method for finishing a surface of a metal component is carried out in a receptacle containing a quantity of non-abrasive media. The component is at least partially immersed in the media and a quantity of active finishing chemistry is supplied. The chemistry forms a relatively soft conversion coating on the surface. By inducing high energy relative movement between the surface and the media the coating can be continuously removed. The method may be carried out in a drag finishing machine.

Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

A method for depositing zinc on the surfaces of a coolant loop of a nuclear power plant includes: providing within a portion of the coolant loop a treatment solution comprising zinc and optionally one or more noble metals and/or reducing agent(s); allowing the treatment solution to remain in the portion for a treatment period; and removing the treatment solution from the portion. According to various embodiments, an average temperature of the treatment solution over the course of the treatment period is less than 150 C. or 100 C. According to various embodiments, an instantaneous temperature of the treatment solution remains below 150 C. or 100 C. throughout the treatment period. The zinc deposition treatment may be applied (1) before the plant is first put into power-generating operation or (2) during an outage following power-generating operation and optionally following a chemical decontamination to remove any oxides formed on surfaces of a coolant loop during prior power operation period(s).

Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.

Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.