Nano-multilayered coatings and fabrication methods are disclosed. By exemplary disclosure, a nano-multilayered coating fabricated from sequential depositions on a substrate from an atmospheric-plasma chemical vapor deposition (AP-CVD) source is disclosed. The coating includes a vapor precursor fed to the deposition source, an amorphous oxide layer deposited from the deposition source onto the substrate, and a nanoparticle layer deposited onto the substrate on top of the amorphous oxide layer. A nano-multilayered coating of the amorphous oxide and nanoparticle layers is fabricated from alternating deposition coatings of the amorphous oxide layer and the nanoparticle layer onto the substrate two or more times.

An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.

An device, method and program may properly perform gamut conversion of content and be applied to a gamut conversion device. A restoration conversion state confirming unit performs confirmation such as gamut conversion state of image data read out from an optical disc and the existence or not of restoration metadata. An information exchange unit communicates with an output device via a communication unit and performs information exchange such as the existence or not of restoration processing functionality and gamut conversion functionality and the like. A determining unit determines whether or not restoration processing is performed with a playing device based on information obtained by the restoration conversion state confirming unit and the information exchange unit. Similarly, the determining unit determines whether or not to perform gamut conversion processing with the playing device based on information obtained by the restoration conversion state confirming unit and the information exchange unit.

A coated cutting tool includes a substrate of cemented carbide, cermet, ceramics, steel or cubic boron nitride and a multi-layered wear resistant coating. The multi-layered wear resistant coating has a total thickness from 5 to 25 m and includes refractory coating layers deposited by chemical vapour deposition (CVD) or moderate temperature chemical vapour deposition (MT-CVD). The multi-layered wear resistant coating has at least one pair of layers (a) and (b), with layer (b) being deposited immediately on top of layer (a). Layer (a) is a layer of aluminium nitride having hexagonal crystal structure (h-AlN) and a thickness from 10 nm to 750 nm. Layer (b) is a layer of titanium aluminium nitride or titanium aluminium carbonitride represented by the general formula Ti.sub.1-xAl.sub.xC.sub.yN.sub.z with 0.4x0.95, 0y0.10 and 0.85z1.15, having a thickness from 0.5 m to 15 m, and at least 90% of the Ti.sub.1-xAl.sub.xC.sub.yN.sub.z of layer (b) has a face-centered cubic (fcc) crystal structure.

A protective coating layer, an electronic device including such a protective coating layer, and the methods of making the same are provided. The electronic device includes a substrate, a thin film circuit layer disposed over the substrate, and a protective coating layer disposed over the thin film circuit layer. The protective coating layer includes a first coating and a second coating disposed over the first coating. Each coating has a cross-plane thermal conductivity in a direction normal to a respective coating surface equal to or higher than 0.5 W/(m*K). The first coating and the second coating have different crystal or amorphous structures, different crystalline orientations, different compositions, or a combination thereof to provide different nanoindentation hardness. The first coating has a hardness lower than that of the second coating.

A CVD preparation method for minimizing camera module dot defects includes: performing ultrasonic cleaning and drying on a base substrate to obtain a pre-treated base substrate; placing the pre-treated base substrate into a reaction chamber, evacuating, and introducing nitrogen or inert gas to slightly positive pressure; simultaneously introducing precursor I and precursor II at a temperature of 500-700? C. to deposit a low-refractive-index L layer on the base substrate; halting introduction of the precursor I and the precursor II, and purging the reaction chamber with nitrogen or the inert gas; introducing raw gas precursor III and precursor IV at a temperature of 600-800? C. to deposit a high-refractive-index H layer on the low-refractive-index L layer; and halting introduction of the precursor III and precursor IV, and purging the reaction chamber with nitrogen or inert gas; and cooling to room temperature to obtain an optical element with coating films having different refractive indices.

Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.

At least a (Al.sub.1-a-b-cCr.sub.aSi.sub.bCu.sub.c)N (where 0.15a0.40, 0.05b0.20, and 0.005c0.05) layer is provided on a surface of a tool body, a Cr concentration or a Cu concentration periodically changes in a layer thickness direction, a concentration Crmax in a highest content point of Cr is in a range of a<Crmax1.3a, a concentration Crmin in a lowest content point of Cr is in a range of 0.50aCrmin<a, and optionally in a case where a Cu composition at one point z along the layer thickness direction is represented by c.sub.z and a Cr composition at the point z is represented by a.sub.z, (c.sub.z/a.sub.z)/(c/a) is 0.7 to 1.5 over the layer thickness direction entirely.

A surface-coated cutting tool includes a base material and a coating formed on a surface of the base material. The coating includes a first hard coating layer including crystal grains having a sodium chloride-type crystal structure. The crystal grain has a layered structure in which a first layer composed of nitride or carbonitride of Al.sub.xTi.sub.1-x and a second layer composed of nitride or carbonitride of Al.sub.yTi.sub.1-y are stacked alternately into one or more layers. The first layer each has an atomic ratio x of Al varying in a range of 0.6 or more to less than 1. The second layer each has an atomic ratio y of Al varying in a range of 0.45 or more to less than 0.6. The largest value of difference between the atomic ratio x and the atomic ratio y is 0.05xy0.5.

Provided is a coated cutting tool comprising a substrate and a coating layer formed on a surface of the substrate. The coating layer includes an alternating laminate structure of an alternating laminate of: a first composite nitride layer including a compound having a composition represented by (Ti.sub.xAl.sub.1-x)N (wherein x denotes an atomic ratio of the Ti element based on a total of the Ti element and the Al element and satisfies 0.10x0.35); and a second composite nitride layer including a compound having a composition represented by (Ti.sub.yAl.sub.zM.sub.1-y-z)N (wherein: M denotes an element of at least one kind selected from Zr, Hf, V, Nb, Ta, Cr, Mo, W, Si and Y; y satisfies 0.30y0.90; z satisfies 0.10z0.70; and y and z satisfy y+z1). The first composite nitride layer includes a phase having a lattice constant of from 0.400 nm or more to 0.430 nm or less and a phase having a lattice constant of from 0.755 nm or more to 0.810 nm or less.