According to the embodiment, in a method for manufacturing a ceramic circuit board in which a copper plate is bonded to at least one surface of a ceramic substrate via a brazing material layer, the brazing material layer does not include Ag, but includes Cu, Ti, and one or two of Sn or In, and a ceramic circuit board is prepared in which a portion of the brazing material layer is exposed between the patterned configuration of the copper plate. The method includes a chemical polishing process of chemically polishing the portion of the brazing material layer, and a brazing material etching process of etching the chemically polished portion of the brazing material layer by using an etchant that includes one or two selected from hydrogen peroxide and ammonium peroxodisulfate and has a pH of not more than 6.

According to the embodiment, in a method for manufacturing a ceramic circuit board in which a copper plate is bonded to at least one surface of a ceramic substrate via a brazing material layer, the brazing material layer does not include Ag, but includes Cu, Ti, and one or two of Sn or In, and a ceramic circuit board is prepared in which a portion of the brazing material layer is exposed between the patterned configuration of the copper plate. The method includes a chemical polishing process of chemically polishing the portion of the brazing material layer, and a brazing material etching process of etching the chemically polished portion of the brazing material layer by using an etchant that includes one or two selected from hydrogen peroxide and ammonium peroxodisulfate and has a pH of not more than 6.

The invention concerns a method for the surface treatment of a component, for example a turbomachine component, the component comprising a surface to be treated, the method comprising the following steps: loading a first dispenser with a chemical etching solution and a second dispenser with a rinsing solution, positioning the first dispenser and the second dispenser opposite the surface to be treated, moving the first dispenser and the second dispenser along the surface to be treated, such that the surface to be treated successively receives the chemical etching solution followed by the rinsing solution.

The invention concerns a method for the surface treatment of a component, for example a turbomachine component, the component comprising a surface to be treated, the method comprising the following steps: loading a first dispenser with a chemical etching solution and a second dispenser with a rinsing solution, positioning the first dispenser and the second dispenser opposite the surface to be treated, moving the first dispenser and the second dispenser along the surface to be treated, such that the surface to be treated successively receives the chemical etching solution followed by the rinsing solution.

According to one embodiment, a method for manufacturing a ceramic circuit board is disclosed. The ceramic circuit board includes a copper plate bonded to at least one surface of a ceramic substrate via a brazing material layer including Ag, Cu, and a reactive metal. The method includes: preparing a ceramic circuit board in which a copper plate is bonded on a ceramic substrate via a brazing material layer, and a portion of the brazing material layer is exposed between a pattern shape of the copper plate; a first chemical polishing process of chemically polishing the portion of the brazing material layer; and a first brazing material etching process of etching the chemically polished portion of the brazing material layer by using an etchant having a pH of 6 or less and including one type or two types selected from hydrogen peroxide and ammonium peroxodisulfate.

Cobalt barrier Chemical Mechanical Planarization (CMP) compositions, systems and methods are provided for the removal of cobalt or a cobalt alloy from the surface of a semiconductor device during its manufacture. The compositions use suitable chemical additives selected from the group consisting of an aliphatic organic carboxylic acid , an aromatic organic carboxylic acid, and combinations thereof; abrasives; an oxidizing agent; and an corrosion inhibitor; to provide tunable cobalt film removal rates, tunable selectivity between cobalt and dielectric or other barrier films, and maintain very low static etching rates on cobalt film.

Cobalt barrier Chemical Mechanical Planarization (CMP) compositions, systems and methods are provided for the removal of cobalt or a cobalt alloy from the surface of a semiconductor device during its manufacture. The compositions use suitable chemical additives selected from the group consisting of an aliphatic organic carboxylic acid , an aromatic organic carboxylic acid, and combinations thereof; abrasives; an oxidizing agent; and an corrosion inhibitor; to provide tunable cobalt film removal rates, tunable selectivity between cobalt and dielectric or other barrier films, and maintain very low static etching rates on cobalt film.

The present invention discloses a chemical mechanical polishing slurry, and the chemical mechanical polishing slurry comprises silica abrasive particles and accelerating agents, wherein the accelerating agents are selected from pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, and pyrimidine compound and its derivatives, which have one or more amino groups. The chemical mechanical polishing slurry can simultaneously increase the removal rate of both silicon nitride and polysilicon.

Techniques for modifying surfaces of electrodes are provided. An electrode surface can be processed by applying an abrasive material or chemical solution to or against the surface to modify the surface to reduce the amount of roughness on, and/or alter the shape of, the surface. The shape of the surface can be altered by rounding or doming the surface. During surface processing, flexible or compressible support material can be applied to the back of an abrasive material, such as sandpaper, to desirably distribute pressure from the support material to the sandpaper and/or mold the shape of the sandpaper to facilitate maintaining desirable contact by the sandpaper on electrode surfaces. With regard to a flexible circuit board on which electrodes are formed, a vacuum chuck component or a temporary abrasive can be used to hold the circuit board in a flat and stationary position during surface processing.

An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below:

##STR00001## wherein: L.sup.1 to L.sup.3 are independently substituted or unsubstituted hydrocarbylene, R.sup.1 to R.sup.4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and X.sup.n is an n-valent anion, where n is an integer of 1 to 3.