The present invention relates to a method for modifying the surface of a substrate made of electrically conductive metal oxide and notably made of ITO, comprising the following steps consisting in: (i) bringing into contact said surface with a solution containing copper ions (Cu.sup.2+) and ammonia then washing and optionally drying the surface thus obtained; and (ii) bringing into contact the surface obtained following step (i) with a solution containing sodium tetraborohydride then washing and optionally drying the surface of said conductive metal oxide substrate. The present invention relates to the use of such a method within the scope of the metallisation by copper of a conductive metal oxide substrate as well as the surfaces of a modified and metallised conductive metal oxide substrate thus obtained.

The present invention relates to a method for modifying the surface of a substrate made of electrically conductive metal oxide and notably made of ITO, comprising the following steps consisting in: (i) bringing into contact said surface with a solution containing copper ions (Cu.sup.2+) and ammonia then washing and optionally drying the surface thus obtained; and (ii) bringing into contact the surface obtained following step (i) with a solution containing sodium tetraborohydride then washing and optionally drying the surface of said conductive metal oxide substrate. The present invention relates to the use of such a method within the scope of the metallisation by copper of a conductive metal oxide substrate as well as the surfaces of a modified and metallised conductive metal oxide substrate thus obtained.

A method of making a light weight component is provided. The method including the steps of: forming a metallic foam core into a desired configuration; applying an external metallic shell to an exterior surface of the metallic foam core after it has been formed into the desired configuration; and attenuating the component to a desired frequency by forming a plurality of openings in the external metallic shell.

A method of making a light weight component is provided. The method including the steps of: forming a metallic foam core into a desired configuration; applying an external metallic shell to an exterior surface of the metallic foam core after it has been formed into the desired configuration; and attenuating the component to a desired frequency by forming a plurality of openings in the external metallic shell.

Devices, systems, and/or methods that can facilitate plating one or more metal layers onto a niobium-titanium substrate are provided. According to an embodiment, a device can comprise a niobium-titanium substrate. The device can further comprise a first metal layer plated on a portion of the niobium-titanium substrate. The device can further comprise a second metal layer plated on the first metal layer. The device can further comprise a third metal layer plated on the second metal layer.

Devices, systems, and/or methods that can facilitate plating one or more metal layers onto a niobium-titanium substrate are provided. According to an embodiment, a device can comprise a niobium-titanium substrate. The device can further comprise a first metal layer plated on a portion of the niobium-titanium substrate. The device can further comprise a second metal layer plated on the first metal layer. The device can further comprise a third metal layer plated on the second metal layer.

Devices, systems, and/or methods that can facilitate plating one or more metal layers onto a niobium-titanium substrate are provided. According to an embodiment, a device can comprise a niobium-titanium substrate. The device can further comprise a first metal layer plated on a portion of the niobium-titanium substrate. The device can further comprise a second metal layer plated on the first metal layer. The device can further comprise a third metal layer plated on the second metal layer.

Devices, systems, and/or methods that can facilitate plating one or more metal layers onto a niobium-titanium substrate are provided. According to an embodiment, a device can comprise a niobium-titanium substrate. The device can further comprise a first metal layer plated on a portion of the niobium-titanium substrate. The device can further comprise a second metal layer plated on the first metal layer. The device can further comprise a third metal layer plated on the second metal layer.

A copper structure having a high density of nanotwins is deposited on a substrate. Electroplating conditions for depositing a nanotwinned copper structure may include applying a pulsed current waveform that alternates between a constant current and no current, where a duration of no current being applied is substantially greater than a duration of a constant current being applied. In some implementations, the nanotwinned copper structure is deposited by applying a pulsed current waveform followed by a constant current waveform. In some implementations, the nanotwinned copper structure is deposited on a highly-oriented base layer, where an electroplating solution contains an accelerator additive. In some implementations, the nanotwinned copper structure is deposited on a non-copper seed layer. In some implementations, the nanotwinned copper structure is deposited at a relatively low flow rate.

A copper structure having a high density of nanotwins is deposited on a substrate. Electroplating conditions for depositing a nanotwinned copper structure may include applying a pulsed current waveform that alternates between a constant current and no current, where a duration of no current being applied is substantially greater than a duration of a constant current being applied. In some implementations, the nanotwinned copper structure is deposited by applying a pulsed current waveform followed by a constant current waveform. In some implementations, the nanotwinned copper structure is deposited on a highly-oriented base layer, where an electroplating solution contains an accelerator additive. In some implementations, the nanotwinned copper structure is deposited on a non-copper seed layer. In some implementations, the nanotwinned copper structure is deposited at a relatively low flow rate.