A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing M.sub.xRu.sub.yN.sub.2 on a substrate by sputtering, wherein 0<x<1.3, 0.7<y<2, and x+y=2, wherein M.sub.xRu.sub.yZ.sub.2 is cubic crystal system or amorphous.

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

A method of forming a monocrystalline nitinol film on a single crystal silicon wafer can comprise depositing a first seed layer of a first metal on the single crystal silicon wafer, the first seed layer growing epitaxially on the single crystal silicon wafer in response to the depositing the first seed layer of the first metal; and depositing the monocrystalline nitinol film on a final seed layer, the monocrystalline nitinol film growing epitaxially on the final seed layer in response to the depositing the monocrystalline nitinol film. The method can form a multilayer stack for a micro-electromechanical system MEMS device.

A method of forming a monocrystalline nitinol film on a single crystal silicon wafer can comprise depositing a first seed layer of a first metal on the single crystal silicon wafer, the first seed layer growing epitaxially on the single crystal silicon wafer in response to the depositing the first seed layer of the first metal; and depositing the monocrystalline nitinol film on a final seed layer, the monocrystalline nitinol film growing epitaxially on the final seed layer in response to the depositing the monocrystalline nitinol film. The method can form a multilayer stack for a micro-electromechanical system MEMS device.

The present disclosure provides an anatase-type niobium oxynitride having an anatase-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure (100) including: a substrate (110) having at least one principal surface composed of a perovskite-type compound having a perovskite-type crystal structure; and a niobium oxynitride (for example, an anatase-type niobium oxynitride film (120)) grown on the one principal surface of the substrate (110), the niobium oxynitride having an anatase-type crystal structure and being represented by the chemical formula NbON.

The present disclosure provides an anatase-type niobium oxynitride having an anatase-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure (100) including: a substrate (110) having at least one principal surface composed of a perovskite-type compound having a perovskite-type crystal structure; and a niobium oxynitride (for example, an anatase-type niobium oxynitride film (120)) grown on the one principal surface of the substrate (110), the niobium oxynitride having an anatase-type crystal structure and being represented by the chemical formula NbON.

The present disclosure provides a rutile-type niobium oxynitride having a rutile-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure (100) including: a substrate (110) having at least one principal surface composed of a rutile-type compound having a rutile-type crystal structure; and a niobium oxynitride (for example, a rutile-type niobium oxynitride film (120)) grown on the one principal surface of the substrate (110), the niobium oxynitride having a rutile-type crystal structure and being represented by the chemical formula NbON.

The invention relates to a process for producing a composite body (36) having at least one functional layer or for the further use for producing an electronic or optoelectronic component (40, 42, 44). The composite body (36) is in the form of a layer structure and comprises at least one substrate (34), which is in the form of a plate and has at least one planar substrate surface, and at least one substantially polycrystalline or at least one substantially single-crystal layer (38), which comprises at least one compound semiconductor, a ceramic material or a metallic hard material. The process is characterized by the following steps: heating at least part of the planar substrate surface to a temperature of at least 100 C. and at most 550 C.; cleaning the substrate surface by supplying hydrogen from a first material source (20) and a plasma produced specifically therefor; terminating the substrate surface by applying carbon, nitrogen or oxygen from the first material source (20) or a second material source (22) and a plasma produced specifically therefor; and growing the at least one layer (38) by supplying material components of the compound semiconductor, of the ceramic material or of the metallic hard material from the first material source (20) and the second material source (22) to the at least one planar substrate surface. The invention also relates to the use of the composite body (36) produced according to one of the disclosed embodiments of the process or a combination thereof for producing an electronic or optoelectronic component.

The invention relates to a process for producing a composite body (36) having at least one functional layer or for the further use for producing an electronic or optoelectronic component (40, 42, 44). The composite body (36) is in the form of a layer structure and comprises at least one substrate (34), which is in the form of a plate and has at least one planar substrate surface, and at least one substantially polycrystalline or at least one substantially single-crystal layer (38), which comprises at least one compound semiconductor, a ceramic material or a metallic hard material. The process is characterized by the following steps: heating at least part of the planar substrate surface to a temperature of at least 100 C. and at most 550 C.; cleaning the substrate surface by supplying hydrogen from a first material source (20) and a plasma produced specifically therefor; terminating the substrate surface by applying carbon, nitrogen or oxygen from the first material source (20) or a second material source (22) and a plasma produced specifically therefor; and growing the at least one layer (38) by supplying material components of the compound semiconductor, of the ceramic material or of the metallic hard material from the first material source (20) and the second material source (22) to the at least one planar substrate surface. The invention also relates to the use of the composite body (36) produced according to one of the disclosed embodiments of the process or a combination thereof for producing an electronic or optoelectronic component.