A method is provided for manufacturing a component. This method includes additively manufacturing a crucible for casting of the component. A metal material is directionally solidified within the crucible to form a metal single crystal material. A sacrificial core is removed to reveal a metal single crystal component with internal passageways. A component is provided for a gas turbine engine that includes a metal single crystal material component with internal passageways. The metal single crystal material component was additively manufactured of a metal material concurrently with a core that forms the internal passageways. The metal material was also remelted and directionally solidified.

The present invention discloses a copper-zinc-aluminum-iron single crystal alloy material having an ultra-large grain structure of 5-50 cm grade, obtained by annealing an as-cast alloy having a polycrystalline structure through a single phase region of 800-960° C. for 2-105 h, where the as-cast alloy includes, by weight percentage, 62-82% of copper, 6-29% of zinc, 5-12% of aluminum, and 2-5% of iron. In the present invention, the alloy compositions have an essential difference and are a copper-zinc-aluminum-iron quaternary alloy, and the iron element is an indispensable alloying element. The preparation process of the present invention is extremely simple and very easy to implement and has a very good application prospect.

The present invention discloses a copper-zinc-aluminum-iron single crystal alloy material having an ultra-large grain structure of 5-50 cm grade, obtained by annealing an as-cast alloy having a polycrystalline structure through a single phase region of 800-960° C. for 2-105 h, where the as-cast alloy includes, by weight percentage, 62-82% of copper, 6-29% of zinc, 5-12% of aluminum, and 2-5% of iron. In the present invention, the alloy compositions have an essential difference and are a copper-zinc-aluminum-iron quaternary alloy, and the iron element is an indispensable alloying element. The preparation process of the present invention is extremely simple and very easy to implement and has a very good application prospect.

A process for growing a substrate (24) as a melt pool (28) solidifies beneath a molten slag layer (30). An energy beam (36) is used to melt a powder (32) or a hollow feed wire (42) with a powdered alloy core (44) under the slag layer. The slag layer is at least partially transparent (37) to the energy beam, and it may be partially optically absorbent or translucent to the energy beam to absorb enough energy to remain molten. As with a conventional ESW process, the slag layer insulates the molten material and shields it from reaction with air. A composition of the powder may be changed across a solidification axis (A) of the resulting component (60) to provide a functionally graded directionally solidified product.

A process for growing a substrate (24) as a melt pool (28) solidifies beneath a molten slag layer (30). An energy beam (36) is used to melt a powder (32) or a hollow feed wire (42) with a powdered alloy core (44) under the slag layer. The slag layer is at least partially transparent (37) to the energy beam, and it may be partially optically absorbent or translucent to the energy beam to absorb enough energy to remain molten. As with a conventional ESW process, the slag layer insulates the molten material and shields it from reaction with air. A composition of the powder may be changed across a solidification axis (A) of the resulting component (60) to provide a functionally graded directionally solidified product.

Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

Provided is a Ni-based single crystal superalloy containing 6% by mass or more and 12% by mass or less of Cr, 0.4% by mass or more and 3.0% by mass or less of Mo, 6% by mass or more and 10% by mass or less of W, 4.0% by mass or more and 6.5% by mass or less of Al, 0% by mass or more and 1% by mass or less of Nb, 8% by mass or more and 12% by mass or less of Ta, 0% by mass or more and 0.15% by mass or less of Hf, 0.01% by mass or more and 0.2% by mass or less of Si, and 0% by mass or more and 0.04% by mass or less of Zr, and optionally containing at least one element selected from B, C, Y, La, Ce, and V, with a balance being Ni and inevitable impurities.

Provided is a Ni-based single crystal superalloy containing 6% by mass or more and 12% by mass or less of Cr, 0.4% by mass or more and 3.0% by mass or less of Mo, 6% by mass or more and 10% by mass or less of W, 4.0% by mass or more and 6.5% by mass or less of Al, 0% by mass or more and 1% by mass or less of Nb, 8% by mass or more and 12% by mass or less of Ta, 0% by mass or more and 0.15% by mass or less of Hf, 0.01% by mass or more and 0.2% by mass or less of Si, and 0% by mass or more and 0.04% by mass or less of Zr, and optionally containing at least one element selected from B, C, Y, La, Ce, and V, with a balance being Ni and inevitable impurities.

A TiAl intermetallic compound single crystal material and a preparation method therefor are disclosed. The alloy composition of the material comprises Ti.sub.aAl.sub.bNb.sub.c(C, Si).sub.d, wherein 43≦b≦49, 2≦c≦10, a+b+c=100, and 0≦d≦1 (at. %).