A process for the production of nanoparticles from a liquid mixture comprising at least one precursor and at least one solvent in a reactor with continuous through-flow comprises the steps of feeding at least one oxygen-containing gas inflow stream having a temperature into the at least one reactor, adding at least one fuel having a temperature to the oxygen-containing gas inflow stream, wherein the fuel and the oxygen-containing gas inflow stream form a homogeneous ignitable mixture having a temperature, wherein the temperature of the homogeneous ignitable mixture is above the autoignition temperature of the homogeneous ignitable mixture, introducing at least one precursor-solvent mixture into the homogeneous ignitable mixture; autoignition of the ignitable mixture of oxygen-containing gas and fuel after an ignition delay time to form a stabilized flame and reacting the precursor-solvent mixture in the stabilized flame to form nanoparticles from the metal salt precursor, removing the formed nanoparticles.

Methods of forming non-metal doped metal oxide nanoparticles using a flame spray pyrolysis process are described. The non-metal doped metal oxide nanoparticles exhibit high photocatalytic activity. Specific non-metal doped metal oxides nanoparticles which can be formed by the described processes include nitrogen-doped titanium dioxide and sulfur-doped titanium dioxide.

Methods of forming non-metal doped metal oxide nanoparticles using a flame spray pyrolysis process are described. The non-metal doped metal oxide nanoparticles exhibit high photocatalytic activity. Specific non-metal doped metal oxides nanoparticles which can be formed by the described processes include nitrogen-doped titanium dioxide and sulfur-doped titanium dioxide.

The present invention relates to a process for preparing a metal oxide,

comprising a) spraying a liquid raw material comprising at least one metal compound by mixing it with a gas to form an aerosol;
b) forming a gaseous reaction mixture from the aerosol obtained in step a) by complete evaporation thereof;
c) converting the gaseous reaction mixture obtained in step b) to metal oxide in the presence of oxygen.

The present invention relates to a process for preparing a metal oxide,

comprising a) spraying a liquid raw material comprising at least one metal compound by mixing it with a gas to form an aerosol;
b) forming a gaseous reaction mixture from the aerosol obtained in step a) by complete evaporation thereof;
c) converting the gaseous reaction mixture obtained in step b) to metal oxide in the presence of oxygen.

The present disclosure is generally directed to a single-step synthesis of nanostructured thin films by a chemical vapor and aerosol deposition (CVAD) process. The present disclosure is also directed to methods for controlling the morphology of the nanostructured thin films. The films can be used, for example, in lithium ion and/or sodium ion battery electrodes, solar cells and gas sensors.

The present disclosure is generally directed to a single-step synthesis of nanostructured thin films by a chemical vapor and aerosol deposition (CVAD) process. The present disclosure is also directed to methods for controlling the morphology of the nanostructured thin films. The films can be used, for example, in lithium ion and/or sodium ion battery electrodes, solar cells and gas sensors.

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

A process for producing a metal oxide powder by flame spray pyrolysis where a) a stream of a solution containing at least one oxidizable or hydrolysable metal compound is atomized to afford an aerosol by means of an atomizer gas, b) this aerosol is brought to reaction in the reaction space of the reactor with a flame obtained by ignition of a mixture of fuel gas and air, c) the reaction stream is cooled and d) the solid product is subsequently removed from the reaction stream, wherein e) the reaction space comprises one or more successive double-walled internals, wherein the wall of the double-walled internal facing the flame-conducting region of the reaction space comprises at least one slot through which a gas or vapour is introduced into the reaction space in which the flame is burning and f) the slot is arranged such that this gas or vapour brings about a rotation of the flame.