A bonding method is capable of firmly bonding a greater variety of materials using an electrochemical reaction. The bonding method includes a placement step of placing an oxygen ion conductor and a conductive member that includes an oxide layer on a surface thereof in contact with each other via the oxide layer, a connection step of connecting the oxygen ion conductor to the positive electrode side of a voltage application device and connecting the conductive member to the negative electrode side of the voltage application device, and a voltage application step of applying voltage between the oxygen ion conductor and the conductive member to bond the oxygen ion conductor and the conductive member.

A honeycomb structure including a plurality of porous honeycomb block bodies bound via joining material layers A. Each of the porous honeycomb block bodies includes a plurality of porous honeycomb segments bound via joining material layers B, each of the porous honeycomb segment includes: partition walls that defines a plurality of cells to form flow paths for a fluid, each of cells extending from an inflow end face that is an end face on a fluid inflow side to an outflow end face that is an end face on a fluid outflow side; and an outer peripheral wall located at the outermost periphery. At least a part of the joining material layers A has higher toughness than that of the joining material layers B.

A laminated glazing having a first ply connected to a second ply by a polymeric interlayer; and a solar control coating located on at least one of the major surfaces thereof, the solar control coating including: a first phase adjustment layer; a first metallic layer located over the first phase adjustment layer; a first primer layer located over the first metallic layer; a second phase adjustment layer located over the first primer layer; a second metallic layer located over the second phase adjustment layer; a second primer layer located over the second metallic layer; a third phase adjustment layer located over the second primer layer; a third metallic layer located over the third phase adjustment layer; a third primer layer located over the third metallic layer; a fourth phase adjustment layer located over the third primer layer; and a protective layer located over the fourth phase adjustment layer.

A composite body of the present invention includes a base and an oxide layer arranged on the base, the oxide layer containing more than 45% by volume of a perovskite-type oxide phase. The composite body may include a first member, a second member, and a joining portion that joins the first member and the second member, at least one of the first member and the second member serving as the base, and the joining portion serving as the oxide layer. The composite body may include the base and a covering portion that covers the whole or part of a surface of the base, the covering portion being formed of the oxide layer.

A joined body 20 according to the present invention includes a first member 22 made of a porous ceramic, a second member 24 made of a metal, and a joint 30 formed of an oxide ceramic of a transition metal, the joint 30 joining the first member 22 to the second member 24. Alternatively, a joined body may include a first member made of a dense material, a second member made of a dense material, and a joint formed of an oxide ceramic of a transition metal, the joint joining the first member to the second member.

A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al.sub.2O.sub.3, and is free from AlN.

The bonded ceramic assembly of the present disclosure includes a first substrate made of ceramic, a second substrate made of ceramic, and a bonding layer positioned between the first substrate and the second substrate. The bonding layer contains aluminum, at least one of calcium and magnesium, a rare earth element, silicon, and oxygen. Out of a total 100 mass % of all of the components making up the bonding layer, the bonding layer contains from 33 mass % to 65 mass % aluminum in terms of oxide, a total of from 27 mass % to 60 mass % calcium and magnesium in terms of oxide, and from 2 mass % to 12 mass % rare earth element in terms of oxide. The silicon content, in terms of oxide, of the surface of the bonding layer is greater than in the interior of the bonding layer.

A piezoelectric thin-film element includes a first electrode layer, a piezoelectric thin film stacked on the first electrode layer, and a second electrode layer stacked on the piezoelectric thin film. A performance index P of the piezoelectric thin film is defined as (d.sub.33,f).sup.2?Y/?. d.sub.33,f is a piezoelectric strain constant of thickness longitudinal vibration of the piezoelectric thin film. Y is a Young's modulus of the piezoelectric thin film. ? is a permittivity of the piezoelectric thin film. The performance index P is from 10% to 80.1%.

This A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of oxygen-containing ceramics, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is formed on a ceramic member side between the copper member and the ceramic member, and an active metal oxide phase composed of an oxide of one or more active metals selected from Ti, Zr, Nb, and Hf is dispersed inside a copper layer in contact with the magnesium oxide layer.

A superconducting material having a strong magnetic-flux pinning by way of sites having high electronic effective mass and charge carrier density. The superconducting material involves a superconducting host material and a dopant pinning material being inert in relation to the superconducting host material and has a {square root over ()}/m* in a range less than that of the superconducting host material, the dopant pinning material doping the superconducting host material.