A second main surface of the copper plate is opposite a first main surface of the copper plate, and is bonded to a silicon nitride ceramic substrate by the bonding layer. A first portion and a second portion of an end surface of the copper plate form an angle of 135 to 165 on an outside of the copper plate. An extended plane of the first portion and the second main surface form an angle of 110 to 145 a side where the second portion is located. A distance from the second main surface to an intersection of the first portion and the second portion in a direction of a thickness of the copper plate is 10 to 100 m. The second main surface extends beyond the extended plane of the first portion by a distance of 10 m or more.

A method of metallizing a ceramic substrate includes depositing a barrier layer onto the substrate, depositing a tie layer onto the barrier layer, and depositing a metal layer onto the tie layer to metallize the substrate. The barrier layer may include an oxygen rich material, a nitrogen rich material, or a carbon rich material.

Provided herein are energy storage devices. In some cases, the energy storage devices are capable of being transported on a vehicle and storing a large amount of energy. An energy storage device is provided comprising at least one liquid metal electrode, an energy storage capacity of at least about 1 MWh and a response time less than or equal to about 100 milliseconds (ms).

Methods of forming a cutting element include sintering diamond particles at a temperature of at least about 1400 C. under a pressure of at least about 10 GPa in the absence of a metal solvent catalyst so as to form a polycrystalline diamond compact (PDC), providing a barrier material over at least a portion of the PDC, providing a carbide material and a metal binder comprising at least one transition metal element over the barrier material and the PDC, and performing a second sintering process comprising sintering the carbide material, the metal binder, the barrier material, and the PDC at a temperature of at least about 1400 C. under a pressure of at least about 5 GPa to form the cutting element. At least a portion of the PDC proximate an exposed exterior surface of the PDC may be at least substantially free of the metal binder.

A method of manufacturing a ceramic sintered body, includes: a film forming step of forming, on a surface of a heat-resistant metal material, a metal coating film made of a metal material having a standard free energy of formation of metal carbides lower than that of the heat-resistant metal material; a molding step of disposing the heat-resistant metal material provided with the coating film in the film forming step at a predetermined position in powder that serves as a starting material of a ceramic base, and molding a ceramic green body by press-molding the powder; and a sintering step of generating a ceramic sintered body by sintering the ceramic green body molded in the molding step.

A power module substrate of the present invention includes a ceramic substrate and a circuit layer having a circuit pattern. In an interface between the circuit layer and the ceramic substrate, a CuSn layer and a Ti-containing layer are laminated in this order from the ceramic substrate side. In a cross-sectional shape of an end portion of the circuit pattern of the circuit layer, an angle formed between a surface of the ceramic substrate and an end face of the CuSn layer is set in a range equal to or greater than 80 and equal to or smaller than 100, and a maximum protrusion length L of the CuSn layer or the Ti-containing layer from an end face of the circuit layer is set in a range equal to or greater than 2m and equal to or smaller than 15 m.

A method for producing a connection between two surfaces or surface sections of two ceramic parts comprises: provision of a first ceramic part and of a second ceramic part; provision of an active brazing solder material on at least one surface section of at least one of the ceramic parts; and heating the active brazing solder in a vacuum brazing process. The whole active brazing solder material is provided for connecting the first and the second ceramic part by a sputtering method, wherein at least one surface section of at least one of the ceramic parts, preferably of the two ceramic parts, is layered with a layer sequence of individual components of the active brazing solder material, wherein the average strength of the layers of an individual component of the active brazing solder is no more than 0.5%, in particular not more than 0.2%, preferably not more than 0.1% and especially preferably not more than 0.05% of the strength of the joining region.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.

A method of manufacturing a feedthrough dielectric body for an active implantable medical device includes the steps of forming a ceramic body in a green state, or, stacking discrete layers of ceramic in a green state upon one another and laminating together. The ceramic body has a first side opposite a second side. At least one via hole is formed straight through the ceramic body extending between the first and second sides. At least one via hole is filled with a conductive paste. The ceramic body and the conductive paste are then dried. The ceramic body and the conductive paste are isostatically pressed at above 1000 psi to remove voids and to form a closer interface for sintering. The ceramic body and the conductive paste are sintered together to form the feedthrough dielectric body. The feedthrough dielectric body is hermetically sealed to a ferrule.

A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm.sup.2 and/or a linear power density of at least 1 W/mm.