C04B2237/706

Bonded body, power module substrate, method for manufacturing bonded body, and method for manufacturing power module substrate

A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonded interface between the ceramic member and the Cu member, a CuSn layer which is positioned on the ceramic member side and in which Sn forms a solid solution in Cu, a first intermetallic compound layer which is positioned on the Cu member side and contains Cu and Ti, and a second intermetallic compound layer which is positioned between the first intermetallic compound layer and the CuSn layer and contains P and Ti are formed.

COPPER-CERAMIC SUBSTRATE
20210002179 · 2021-01-07 ·

The invention relates to a copper-ceramic substrate comprising: a ceramic carrier, and at least one copper layer bonded to a surface of the ceramic carrier, which has a free surface for forming a conductor structure and/or for securing bonding wires, wherein the copper layer has a microstructure with an average grain size diameter of 200 to 500 m, preferably 300 to 400 m.

INSULATED CIRCUIT BOARD

An insulated circuit board having a ceramic substrate, a circuit layer on which a circuit pattern is formed and that is bonded to one surface of the ceramic substrate, and a metal layer bonded to the other surface of the ceramic substrate. The circuit layer has a first circuit layer that is bonded to the ceramic substrate and is made of aluminum and a second circuit layer that is bonded to the upper surface of the first circuit layer and is made of copper, the metal layer has a first metal layer that is bonded to the ceramic substrate and is made of aluminum and a second metal layer that is bonded to the upper surface of the first metal layer and is made of copper, and the thicknesses of the first circuit layer and the first metal layer are each 0.2 mm or more and 0.9 mm or less.

LASER CUTTING OF METAL-CERAMIC SUBSTRATES

The present application relates to a method of laser ablation of a metal-ceramic substrate, in which a laser is used under process conditions in which the formation of solid metal particles on the metal-ceramic substrate, which can separate from metal particles released by laser ablation near the ablation edge, is essentially avoided. Further the present application relates to a ceramic-metal substrate comprising a ceramic substrate and a metallization on at least one side of the ceramic substrate, wherein the ceramic substrate and the metallization have flush cutting edge.

Ceramic metal circuit board and semiconductor device using the same

The present invention provides a ceramic metal circuit board including a ceramic substrate and metal plates bonded to both surfaces of the ceramic substrate through respective bonding layers, wherein a metal film is provided on a surface of one metal plate bonded to one surface of the ceramic substrate; and at least a part of another metal plate bonded to another surface of the ceramic substrate is not provided with the metal film. Preferably, a protruding portion is formed as a portion of the bonding layer so as to protrude from a side surface of each of the metal plates. According to the above-described configuration, it is possible to provide a ceramic circuit board which is easy to use according to the parts to be bonded and is excellent in heat-cycle resistance characteristics.

Insulated heat dissipation substrate
10861769 · 2020-12-08 · ·

An insulated heat dissipation substrate including: a ceramic substrate; and a conductor layer bonded onto at least one of main surfaces of the ceramic substrate, wherein the conductor layer includes an upper surface, a lower surface bonded to the ceramic substrate, and a side surface connecting the upper surface with the lower surface wherein, a tip of the upper surface recedes in the normal direction of the conductor layer from a tip of the lower surface, the side surface has a contour having an inwardly recessed curve line and having a portion receding in the normal direction of the conductor layer from the tip of the upper surface, and a connection portion between the upper surface and the side surface has a rounded shape such that a maximum radius R of a circle is 0.1 mR5 m on average.

THERMOELECTRIC CONVERSION ELEMENT
20200373474 · 2020-11-26 ·

A thermoelectric conversion element includes an element body formed of a thermoelectric conversion material of a silicide-based compound, and electrodes each formed on one surface of the element body and the other surface opposite the one surface. The electrodes are formed of a sintered body of a copper silicide, and the electrodes and the element body are directly joined.

Method for manufacturing ceramic-metal layer assembly, method for manufacturing ceramic circuit board, and metal-board-joined ceramic base material board

Provided is a method for manufacturing a metal-layer-joined ceramic base material board, in which at least one scribe line is formed, on each of the front and back surfaces of a ceramic base material board, along dividing lines for dividing the ceramic base material board into a plurality of ceramic boards, a metal board covering at least a portion of the dividing lines is joined to each of the front and back surface of the ceramic base material board, the metal boards are etched along the dividing lines to form a plurality of metal layers, and the plurality of metal layers are joined to each of the front and back surfaces of the ceramic base material board.

BONDED BODY AND INSULATING CIRCUIT SUBSTRATE
20200321264 · 2020-10-08 ·

A bonded body is formed to configured to join a ceramic member formed of a Si-based ceramic and a copper member formed of copper or a copper alloy, in which, in a joint layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on the ceramic member side.

Circuit substrate and semiconductor device

To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.