A method is provided for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer and a metal layer that are formed on an insulating layer, and the heat sink being bonded to the metal layer side. The method includes: an aluminum bonding layer forming step of forming an aluminum bonding layer formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower on the metal layer; and a heat sink bonding step of laminating a copper bonding material formed of copper or a copper alloy between the aluminum bonding layer and the heat sink and bonding the aluminum bonding layer, the copper bonding material, and the heat sink to each other by solid phase diffusion bonding.

A composite substrate includes a supporting substrate and a functional substrate that are directly joined together, the supporting substrate being a sintered sialon body.

A bonded body is formed to configured to join a ceramic member formed of a Si-based ceramic and a copper member formed of copper or a copper alloy, in which, in a joint layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on the ceramic member side.

In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.

A power module substrate according to the present invention is a power module substrate in which a copper sheet made of copper or a copper alloy is laminated and bonded onto a surface of a ceramic substrate (11), an oxide layer (31) is formed on the surface of the ceramic substrate (11) between the copper sheet and the ceramic substrate (11), and the thickness of a AgCu eutectic structure layer (32) is set to 15 m or less.

A thermally-actuatable gas valve assembly comprising a ceramic heater is shown and described. The gas valve assembly comprises a housing with a gas inlet and a gas outlet. A bimetal thermal actuator has a valve plug that removably seals the gas outlet from the interior of the housing. The ceramic heater is energizable to cause the thermal actuator to deflect which unseats the valve plug from the gas outlet, thereby placing the gas outlet in fluid communication with the gas inlet and the interior of the housing. A gas heating system is also shown and described in which the gas valve assembly selectively supplies cooking gas to a silicon nitride ceramic igniter. The igniter and the heater are in series such that when a source of alternating current is applied across the igniter and the heater, the igniter reaches the autoignition temperature of the combustion gas before the valve assembly opens

A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonded interface between the ceramic member and the Cu member, a CuSn layer which is positioned on the ceramic member side and in which Sn forms a solid solution in Cu, a first intermetallic compound layer which is positioned on the Cu member side and contains Cu and Ti, and a second intermetallic compound layer which is positioned between the first intermetallic compound layer and the CuSn layer and contains P and Ti are formed.

The present invention provides a method for manufacturing a ceramic electrostatic chuck which enables high purity and minimum thickness variation of a dielectric layer formed of ceramics or composite ceramics. The method includes: forming grooves for electrode pattern formation in a dielectric layer formed of ceramics or composite ceramics and having a density of 95% or greater; forming an electrode pattern by filling the grooves with a metal; forming an activated bonding layer configured for joining on the dielectric layer; and joining an insulator layer, which is formed of ceramics or composite ceramics and has a density of 95% or greater, with the dielectric layer.

An aluminum nitride sintered body for use in a semiconductor manufacturing apparatus is provided. The aluminum nitride sintered body exhibits, in a photoluminescence spectrum thereof in a wavelength range of 350 nm to 700 nm obtained with 250 nm excitation light, a highest emission intensity peak within a wavelength range of 580 nm to 620 nm.

Adhesive compositions and methods for bonding materials with different thermal expansion coefficients is provided. The adhesive is formulated using a flux material, a low flux material, and a filler material, where the filler material comprises particulate from at least one of the two components being bonded together. A thickening agent can also be used as part of the adhesive composition to aid in applying the adhesive and establishing a desired bond thickness. The method of forming a high strength bond using the disclosed adhesive does not require the use of intermediary layer or the use of high cure temperatures that could damage one or both of the components being bonded together.