The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising: —forming a metal chalcogenide quantum dot solid-state element, and —carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises: —a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and/or —a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots; and —providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping. The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.

A composite interface transport material-based perovskite photovoltaic, light emission and light detection multi-functional device and a preparation method therefor. The multi-functional device comprises a transparent conductive glass, a composite electron transport layer, a perovskite active layer, a composite hole transport layer and a metal electrode layer which are sequentially arranged in a stacked manner from bottom to top. The work functions of the interface transport layers are adjusted by means of the multi-element interface transport materials, so that the work functions of the electron transport layer and the hole transport layer are respectively levelled with conduction band and valence band positions of the perovskite active layer. According to experiment result comparisons, the photoelectric conversion efficiency and the luminous efficiency of the perovskite multi-functional device, after energy band regulation, are significantly increased.

An ink including at least one colloidal dispersion of particles and at least one metal halide binder, wherein the binder is a dissociated salt of metal and halogen. Also, a method for preparing a light-sensitive material, a light-sensitive material obtainable by the method, and a device including at least one light-sensitive material obtainable by the method.

A quantum dot includes an inorganic particle, and an organic ligand and an inorganic ligand on a surface of the inorganic particle, and the molar percentage of the inorganic ligand relative to the total amount of the inorganic ligand and the organic ligand is 25% or more and 99.8% or less.

The present invention discloses a process for the preparation of metal sulphide quantum dots by using a very low cost sulphur precursor as a sulphur source. The metal sulphide quantum dots finds application in optical devices selected from photovoltaic cells, photodetectors and light-emission devices.

The present invention provides the use of a lead (IV) containing compound to prepare a lead chalcogenide nanocrystal and a method for producing broadband lead chalcogenide nanocrystals in a low cost, size-controllable and scalable method, the method comprising contacting a lead (IV) containing compound with an organic acid and a chalcogen-containing reagent.

A process for synthesizing Cu.sub.2-xS/PbS core/shell nanocrystals. Pb-oleate is mixed with 1-octadecene and heated to 60° C. Cu.sub.2-xS core solution and bis(trimethylsilyl)sulfide stock solution are added and the mixture is stirred at 60° C. for 6 minutes to form the PbS shell around the Cu.sub.2-xS nanocrystal cores. The flask is cooled and acetonitrile and toluene is added and the mixture is centrifuged to precipitate and remove the Cu.sub.2-xS/PbS core/shell nanocrystals from the reaction mixture. The reaction also produces homogeneously nucleated PbS nanocrystals, which are removed from the Cu.sub.2-xS/PbS core/shell reaction mixture via size-selective precipitation. By tailoring the amounts of Pb-oleate and bis(trimethylsilyl)sulfide stock solution in the reaction vessel, while maintaining their molar ratio of 1.5:1 and the number of Cu.sub.2-xS cores in the reaction, Cu.sub.2-xS/PbS core/shell nanocrystals having a predetermined shell thickness of PbS, and thus a predetermined level of chemical stability, can be obtained.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

The present disclosure provides a quantum dot light-emitting device, a preparing method and a display device. The quantum dot light-emitting device includes an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode laminated one on another. The quantum dot light-emitting layer includes heterodimer quantum dots, the heterodimer quantum dots include first quantum dots carrying a positive charge and second quantum dots carrying a negative charge, and each first quantum dot and each second quantum dot have a same energy gap and different positions of conduction band and valence band.

Techniques for growing, at least one of: (a) quantum dots and (b) nano-crystals, on a surface of a material are provided. One method comprises placing a precursor on the surface; adding an antisolvent to the precursor; and growing at least one of the quantum dots and the nanocrystals on the surface.