A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including Sc.sub.1-x-yA.sub.yRE:Cr.sub.x, wherein MO=P.sub.3O.sub.9, BP.sub.3O.sub.12, SiP.sub.3O.sub.12; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0≤x≤0.75, 0≤y≤0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.

The present invention concerns a solid nanocomposite material consisting of a polymer-matrix in which are dispersed alkali metal, hydronium or ammonium salts of polyanionic components, wherein the polymer-matrix comprises at least a linear or branched polymer or copolymer containing one or several poly(ethylene oxide) (PEO) chains, said polymer or copolymer being optionally crosslinked and each PEO chain having at least 4 ethylene oxide monomer units. The present invention relates also to a photonic, e.g. optoelectronic, device comprising such a nanocomposite material. Such material and device can be used as phosphorescence emitter, for crop growth lighting or for generating singlet oxygen.

A luminophore may have the general formula A.sub.2EZ.sub.zX.sub.x:RE,

where: A is selected from the group of the monovalent elements; E is selected from the group of the tetravalent, pentavalent, or hexavalent elements; Z is selected from the group of the divalent elements; X is selected from the group of the monovalent elements; RE is selected from activator elements; 2+e=2z+x, with the charge number e of the element E; and x+z=5 and z>0.

A process is also disclosed that is directed to producing the luminophore and a corresponding radiation-emitting component.

An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.

A method of manufacturing quantum dots includes placing nickel powder having a certain particle size, a precursor material, and an organic solvent into a container, maintaining a pressure in the container at a certain value, and synthesizing quantum dots by stirring the nickel powder, the precursor material, and the organic solvent in the container.

A method of manufacturing quantum dots includes placing nickel powder having a certain particle size, a precursor material, and an organic solvent into a container, maintaining a pressure in the container at a certain value, and synthesizing quantum dots by stirring the nickel powder, the precursor material, and the organic solvent in the container.

To provide an oxide fluorescent material that has a light emission peak wavelength in a wavelength range of from red light to near infrared light. The oxide fluorescent material has a composition encompassed in a compositional formula represented by the following formula (1):

(Li.sub.1-tM.sup.1.sub.t).sub.u(Ga.sub.1-vM.sup.2.sub.v).sub.5O.sub.w:Cr.sub.x,Ni.sub.y,M.sup.3.sub.z,  (1)

wherein in the formula (1), M.sup.1 represents at least one kind of an element selected from the group consisting of Na, K, Rb, and Cs; M.sup.2 represents at least one kind of an element selected from the group consisting of B, Al, Sc, In, and a rare earth element; M.sup.3 represents at least one kind of an element selected from the group consisting of Si, Ge, Sn, Ti, Zr, Hf, Bi, V, Nb, and Ta; and t, u, v, w, x, y, and z each satisfy 0≤t≤1.0, 0.7≤u≤1.6, 0≤v<1.0, 7.85≤w≤11.5, 0.05≤x≤1.2, 0≤y≤0.5, 0.25<x+y≤1.2, y<x, and 0≤z≤0.5.

A scintillator assembly for use in a CT imaging system is provided. The scintillator assembly includes a frame including a base, and a plurality of walls extending substantially perpendicular from the base, wherein the base and the plurality of walls define a plurality of pixel compartments, and granular scintillating material contained in at least some of the plurality of pixel compartments, wherein the granular scintillating material is configured to convert x-ray beams into light.

A scintillator assembly for use in a CT imaging system is provided. The scintillator assembly includes a frame including a base, and a plurality of walls extending substantially perpendicular from the base, wherein the base and the plurality of walls define a plurality of pixel compartments, and granular scintillating material contained in at least some of the plurality of pixel compartments, wherein the granular scintillating material is configured to convert x-ray beams into light.

Provided is a near-infrared light emitting fluorescent material including an oxide containing Gd, Cr and Al, in which a molar ratio of Cr is in a range of 0.0085 or more and 0.05 or less when a total molar ratio of Gd and Cr is defined as 1 in 1 mol of the chemical composition of the near-infrared light emitting fluorescent material, and having a light emission peak wavelength in a range of 690 nm or more and 790 nm or less, as excited with light having a light emission peak wavelength in a range of 380 nm or more and 480 nm or less.