A cleaning solution composition and a cleaning method using the cleaning solution composition are provided. The cleaning solution composition includes a chelating agent including a first organic acid and a second organic acid, and an etching agent including a fluoride compound.

A hydrofluoroolefin compound is represented by the following general formula (I): where R.sub.F1 is a hydrogen atom or CH.sub.3, and (iii) R.sub.F1 is a linear or branched perfluorinated alkyl group having 1 to 10 carbon atoms and optionally including one or more catenated heteroatoms; and R.sub.F2 is a fluorine atom or a linear or branched perfluorinated alkyl group having 1 to 8 carbon atoms and optionally including one or more catenated heteroatoms; with the proviso that when RF2 is a fluorine atom, then RF1 includes at least 2 carbon atoms; or (iv) R.sub.F 1 and R.sub.F2 are bonded together to form a ring structure having 4 to 8 carbon atoms and optionally including one or more catenated heteroatoms.

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A cleaning composition for removing post-etch or post-ash residues from a semiconductor substrate, and a cleaning method using the same are disclosed. The cleaning composition can comprise water; a fluorine compound; an alkanolamine compound; and a corrosion inhibitor. The corrosion inhibitor is a mixture of a first corrosion inhibitor and a second corrosion inhibitor. When using the cleaning composition, it is possible to efficiently remove the residues of various aspects existing on a surface of the substrate or the semiconductor device without damage to a substrate or a semiconductor device including various metal layers, insulating layers, etc. Accordingly, when a highly integrated and miniaturized semiconductor device is manufactured, it may be advantageously applied to the removal of residues generated on the surface of the substrate or the semiconductor device.

A cleaning solution composition and a cleaning method using the cleaning solution composition are provided. The cleaning solution composition includes a chelating agent including a first organic acid and a second organic acid, and an etching agent including a fluoride compound.

An object of the present invention is to provide a solvent and a detergent that have excellent basic properties as solvents or detergents, such as solubility, and that have a boiling point, flammability, toxicity, GWP, and ODP that are all within preferable ranges. To achieve the above object, the present invention provides a solvent composition or detergent composition comprising a hydrochlorofluoropropene represented by the formula: CX.sub.3CX═CX.sub.2, wherein each X is the same or different and is F or Cl, at least one X is F, and at least three X are Cl; the hydrochlorofluoropropene having an atmospheric pressure boiling point of 50° C. or higher.

The present application provides azeotrope or azeotrope-like compositions comprising dimethyl carbonate and a perfluoroheptene ether or a perfluoropentene ether, wherein the perfluoroheptene ether or perfluoropentene ether is present in the composition in an amount effective to form an azeotrope composition or azeotrope-like composition with the dimethyl carbonate. Methods of using the composition provided herein in cleaning and carrier fluid applications are also provided.

The invention provides compositions useful in post-CMP cleaning operations where ceria is present. In one aspect, the invention provides a composition comprising a reducing agent; a chelating agent; an amino(C.sub.6-C.sub.12 alkyl)alcohol; and water; wherein the composition has a pH of less than about 8. The compositions of the invention were found to show improved ceria removal on, for example, poly silicon (poly Si) substrates. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in one or more containers, selected components of the compositions.

To provide a composition which is excellent in solubility of various organic substances, presents no adverse effects on the global environment and is excellent in stability. A composition comprising a monochlorotrifluoropropene and at least one stabilizer selected from the group consisting of a carboxylic acid, a carboxylic acid salt and a carboxylic acid ion, characterized in that the content of the stabilizer to the total content of the monochlorotrifluoropropene and the stabilizer is from 0.1 to 500 mass ppm.

The present invention relates to an etching composition and a method of producing a MXene. The etching composition of the present invention can stably and quickly produce a MXene at high temperature. The etching composition of the present invention can produce a MXene in high yield. The etching composition of the present invention can easily produce various types of MXenes. A method using the etching composition of the present invention can produce a MXene having excellent electrochemical and mechanical properties.

A composition, kit and method useful in a multi-stage washing method for cleaning an aluminum or aluminum alloy containers while reducing hazardous exposure of workers to toxic levels of hydrogen fluoride or ammonium bifluoride employs a stable, neutralized ammonium bifluoride-containing accelerator solution for addition to an acidic wash solution.