Patent classifications
C11D7/5013
Method for treating a semiconductor device
A sensor array includes a plurality of sensors. A sensor of the plurality of sensors has a sensor pad exposed at a surface of the sensor array. A method of treating the sensor array includes exposing at least the sensor pad to a wash solution including sulfonic acid and an organic solvent and rinsing the wash solution from the sensor pad.
Semiconductor element cleaning liquid and cleaning method
The present invention makes it possible to provide a semiconductor element cleaning method that is characterized in that: a hard mask pattern is formed on a substrate that has a low relative permittivity film and at least one of a cobalt, a cobalt alloy, or a tungsten plug; and a cleaning liquid that contains 0.001-20% by mass of an alkali metallic compound, 0.1-30% by mass of quaternary ammonium hydroxide, 0.01-60% by mass of a organic water-soluble solvent, 0.0001-0.1% by mass of hydrogen peroxide, and water is subsequently used on a semiconductor element in which, using the hard mask pattern as a mask, the hard mask, the low relative permittivity film, and a barrier insulating film are dry etched, and dry etch residues are removed.
CLEANING LIQUID AND METHOD FOR MANUFACTURING THE SAME
A cleaning liquid having an excellent corrosion inhibition function, and a method for manufacturing the same. The cleaning liquid contains alkanol hydroxyamine represented by general formula (1), and a basic compound other than the alkanol hydroxyamine. In the formula, R.sup.a1 and R.sup.a2 each independently represents a C1-C10 alkyl group having one to three hydroxy groups, or a hydrogen atom, and R.sup.a1 and R.sup.a2 are not simultaneously a hydrogen atom.
##STR00001##
Cleaning industrial plant components to remove metal halides
Cleaning industrial plant components to remove silane, metal halide, and organometallic halide contaminants and mixtures thereof, involves treating the plant components with a liquid nitrile or amine or mixture thereof or with a solution of a nitrile or amine or mixture thereof in an aprotic solvent.
Removing resin coatings from wellbore surfaces
Methods and compositions are provided for removing a residue of resin from the surface of equipment. In one embodiment, the methods comprise: providing a cleaning solution comprising a pH-adjusting agent, a chemical solvent, and water, wherein the chemical solvent is selected from the group consisting of -lactam, -lactam, -lactam, -lactam, 2-pyrrolidone, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone (DMI), caprolactam, cyclohexanone, cyclopentanone, -butyrolactone, -butyrolactone, -decalactone, -valerolactone, -caprolactone, butylene carbonate, propylene carbonate, and ethylene carbonate, any combination thereof, and any derivative thereof; allowing the cleaning solution to contact a surface at least partially coated with a layer of resin; and allowing the cleaning solution to at least partially dissolve the resin.
Treatment liquid and method for treating object to be treated
A treatment liquid contains water, hydroxylamine, and one or more kinds of hydrazines selected from the group consisting of hydrazine, a hydrazine salt, and a hydrazine derivative, in which a total content of the hydrazines is 1 part by mass or less with respect to 100 parts by mass of the hydroxylamine.
ADDITIVE FOR CLEANING SCR SYSTEMS
The present disclosure relates to the use of a polar solvent as an additive to a solution containing a component that releases ammonia at above 200 C. for the removal of deposits or impurities in a selective catalytic reduction system, wherein the polar solvent has a boiling point at 101.3 kPa of at least 140 C. The present disclosure further relates to a method of removing deposits or impurities in a selective catalytic reduction system and a method of operating a selective catalytic reduction system.
Stripping compositions for removing photoresists from semiconductor substrates
This disclosure relates to photoresist stripping compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one alcohol solvent; 3) at least one quaternary ammonium hydroxide; 4) water; 5) at least one copper corrosion inhibitor selected from 6-substituted-2,4-diamino-1,3,5-triazines; and 6) optionally, at least one defoaming surfactant.
Method for manufacturing liquid ejection head
A method for manufacturing a liquid ejection head including a substrate having a terminal for electrical connection to an external device, an inorganic material layer on the substrate, and a flow path member disposed on the inorganic material layer and containing an organic material, and the manufacturing method includes a cleaning step of removing a silane coupling agent attached to the terminal by using a solution containing hydrogen fluoride, ammonium fluoride, and a water-soluble organic solvent.
METHOD FOR CLEANING A MICROFLUIDIC DEVICE USING AN IONIC LIQUID
The invention pertains to a method for cleaning a microfluidic device. More specifically the invention pertains to a method for cleaning a microfluidic device, wherein the method comprises removing biological matter from the inside of the device by flushing the microfluidic device with an ionic liquid. The invention further pertains to the use of an ionic liquid to clean mammalian cells and to a kit of parts comprising a microfluidic device and an ionic liquid.