A method for producing a thin film according to the present disclosure comprises a step of forming the thin film on a substrate using a target. The target is formed of a mixture containing a first material and a second material. The first material has a composition represented by ATiO.sub.3 (where A is at least one selected from the group consisting of Ba and Sr). The second material has a composition represented by EH.sub.2 (where E is at least one selected from the group consisting of Ti and Zr). The thin film is formed of a first oxide containing A, Ti, and O. Some of oxide ions contained in the first oxide have been replaced by hydride ions.

PbO-based photoconductive X-ray imaging devices are disclosed in which the PbO photoconductive layer exhibits an amorphous crystal structure. According to selected embodiments, the amorphous PbO photoconductive layer may be formed by providing a substrate inside an evacuated evaporation chamber and evaporating lead oxide to deposit a photoconductive lead oxide layer onto the substrate, while subjecting the photoconductive layer to ion bombardment with oxygen ions having an ion energy between 25 and 100 eV. X-ray direct detection imaging devices formed from such amorphous PbO photoconductive layers are shown to exhibit image lag that is suitable for fluoroscopic imaging.

A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.

A method of fabricating a thin film battery may comprise: depositing a first stack of blanket layers on a substrate, the first stack comprising a cathode current collector, a cathode, an electrolyte, an anode and an anode current collector; laser die patterning the first stack to form one or more second stacks, each second stack forming the core of a separate thin film battery; blanket depositing an encapsulation layer over the one or more second stacks; laser patterning the encapsulation layer to open up contact areas to the anode current collectors on each of the one or more second stacks; blanket depositing a metal pad layer over the encapsulation layer and the contact areas; and laser patterning the metal pad layer to electrically isolate the anode current collectors of each of the one or more thin film batteries. For electrically non-conductive substrates, cathode contact areas are opened-up through the substrate.

Provided is a piezoelectric film that has a perovskite structure preferentially oriented to a (100) plane and that comprises a composite oxide represented by the following compositional formula: Pb.sub.a[(Zr.sub.xTi.sub.1-x).sub.1-yNb.sub.y].sub.bO.sub.3 wherein 0<x<1, and 0.10≤y<0.13, in which in a case where a ratio I.sub.(200)/I.sub.(100) of a diffraction peak intensity I.sub.(200) from a perovskite (200) plane with respect to a diffraction peak intensity I.sub.(100) from a perovskite (100) plane, as measured by an X-ray diffraction method, is r, and a/b is q, 0.28r+0.9≤q≤0.32r+0.95, 1.10≤q≤1.25, and r≤1.00 are satisfied.

According to the present invention, a piezoelectric film having a single crystal structure is able to be formed, from various piezoelectric materials, on a film structure of the present invention. A film structure according to the present invention includes: a substrate; a buffer film which is formed on the substrate and has a tetragonal crystal structure containing zirconia; a metal film containing a platinum group element, which is formed on the buffer film by means of epitaxial growth; and a film containing Sr(Ti.sub.1−x, Ru.sub.x)O.sub.3 (wherein 0≤x≤1), which is formed on the metal film by means of epitaxial growth.

A thin-film piezoelectric material elements are arranged on a thin-film piezoelectric material substrate. The thin-film piezoelectric material substrate includes an insulator on Si substrate including a substrate including silicon and an insulating layer on a surface of the substrate. The thin-film piezoelectric material element includes a thin-film laminated part on a top surface of the insulating layer. The thin-film laminated part includes a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film including lead zirconate titanate, shown by a formula Pb (Zr.sub.xTi.sub.(1-x)) O.sub.3(0≤×≤1), and an upper electrode film laminated on the piezoelectric material film. The thin-film laminated part further includes an upper piezoelectric-material protective-film, laminated on the upper side of the upper electrode film.

Embodiments described herein relate to a method of fabricating a perovskite film device. The method includes heating and degassing a substrate within a processing system; depositing a first perovskite film layer over a surface of the substrate using multi-cathode sputtering deposition within a processing chamber; depositing a second perovskite film layer over the first perovskite film layer using multi-cathode sputtering deposition within a processing chamber; and annealing the substrate with the first perovskite film layer and second perovskite film layer disposed thereon. The first perovskite film layer includes a first perovskite material. The second perovskite film layer includes a second perovskite material.

A sputtering target formed from a potassium sodium niobate sintered body to which a dopant has been added; as a dopant, the sputtering target includes one or more types among Li, Mg, Ca, Sr, Ba, Bi, Sb, V, In, Ta, Mo, W, Cr, Ti, Zr, Hf, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cu, Zn, Ag, Mn, Fe, Co, Ni, Al, Si, Ge, Sn, and Ga; and a variation coefficient of a dopant concentration in a plane of the sputtering target is 0.12 or less. In terms of suppressing the generation of particles, provided is a sputtering target which is formed from a sintered body that includes potassium sodium niobate and to which a dopant has been added.

The invention relates to a (RE,Y)-123 superconducting film containing mixed artificial pinning centers and a preparation method thereof, wherein a stoichiometric ratio of Cu in a parent phase of the (RE,Y)-123 superconducting film is 3.05-5; the mixed artificial pinning centers include a perovskite structure BaMO3 and a double-perovskite structure oxide Ba2(RE,Y)NO6; and a total mole percentage of Ba2(RE,Y)NO6 in the superconducting film is not less than 2.5%. The mixed artificial pinning centers form well-aligned column structures along the thickness direction in the superconducting film. The invention is intended not only to solve the problem that a single secondary phase cannot be well aligned along the thickness direction of (RE,Y)-123 when using the high-speed pulsed laser deposition technique, but also to effectively overcome the film thickness effect of the (RE,Y)-123 superconducting film containing mixed artificial pinning centers, hence the in-field current carrying capacity of the superconducting film is significantly improved in industrialized high-speed production.