The present invention provides a method for in-situ etching of a wafer prior to sputter deposition, the method comprising the following steps. A sputtering chamber having a sputtering target is provided. The wafer is placed into the sputtering chamber. A gas is introduced into the sputtering chamber such that the gas at least partially ionized as a plasma, wherein the plasma includes positively charged gas ions. A first negative potential is applied to the wafer while a second negative potential is simultaneously applied to the sputtering target and while no shutter is positioned between the wafer and the sputtering target.

A sputtering apparatus (100) according to this invention includes a shutter (50) configured to move between a shutter-closed position (50a) in which the to-be-deposited object (2) is covered from the target (1), and a shutter-moved-out position (50b) in which the shutter is moved out of the shutter-closed position (50a) to an exhaust pump (30) side and stays on the exhaust pump side during thin film deposition. A plate-shaped reflector (60, 70) is arranged between the exhaust pump (30) and the shutter (50) in a moved-out state in which the shutter is arranged at the shutter-moved-out position (50b), and is configured to reflect radiation of heat directing to the exhaust pump (30) from the shutter (50) in the moved-out state.

Embodiments of the present disclosure generally relate to semiconductor processing, and specifically to methods and apparatus for surface modification of substrates. In an embodiment, a substrate modification method is provided. The method includes positioning a substrate within a processing chamber; and depositing a material on a portion of the substrate by a deposition process, wherein the deposition process comprises: thermally heating the substrate to a temperature of less than about 500? C.; delivering a first electromagnetic energy from an electromagnetic energy source to the substrate to modify a first region of the substrate, the first region of the substrate being at or near an upper surface of the substrate; and depositing a first material on the first region while delivering the first electromagnetic energy.

Methods and apparatus for processing a substrate are provided herein. For example, a cooling apparatus for use with a substrate support of a processing chamber comprises a heat exchanger, a manifold assembly comprising a first input configured to connect to an output of the heat exchanger, a second input configured to connect to a first coolant supply configured to supply a first coolant, a first output configured to connect to the substrate support of the processing chamber, and a second output configured to connect to an input of the heat exchanger, a gas input configured to connect to a second coolant supply that is configured to supply a second coolant that is different from the first coolant to the substrate support, a first three-way valve connected between the first output of the manifold assembly and the substrate support and connected between the gas input and the substrate support, and a controller configured to control supplying one of the first coolant or the second coolant during operation.

A vapor deposition apparatus disclosed by an embodiment comprises: a vacuum chamber (8); a mask holder (15) for holding a deposition mask 1; a substrate holder (29) for holding a substrate for vapor deposition (2); an electromagnet (3) disposed above a surface; a vapor deposition source 5 for vaporizing or sublimating a vapor deposition material; and a heat pipe (7) including at least a heat absorption part (71) and a heat dissipation part (72), the heat absorption part being in contact with the electromagnet (3), and the heat dissipation part being derived to an outside of the vacuum chamber (8). The heat pipe (7) and the electromagnet (3) are in intimate contact with each other at an area of a contact part between the heat pipe (7) and the electromagnet (3), the area being equal to or more than a cross-sectional area within an inner perimeter of a coil (32).

Provided are a vapor deposition apparatus, a vapor deposition method, and a method of manufacturing an organic EL display apparatus which can prevent heat generation of a magnet chuck by using the magnet chuck that strongly attracts a deposition mask to dispose a substrate for vapor deposition and the deposition mask in proximity to each other during vapor deposition, while being less influenced by any magnetic field during alignment between the substrate for vapor deposition and the deposition mask. In the vapor deposition apparatus, a magnet chuck (3) includes a permanent magnet (3A) and an electromagnet (3B).

The method for depositing a film of the present invention includes the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. A method for depositing a film enabling production of an oil-repellent substrate includes an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

A carrier for holding a substrate is described. The carrier includes a carrier body having a first surface, and an adhesive arrangement provided on the first surface. The carrier body includes one or more conduits configured for providing a gas into the adhesive arrangement. Further, a method for controlling a temperature of a substrate is described. The method includes providing a carrier as described herein; supplying a gas through the one or more conduits into the adhesive arrangement; and providing the gas to a backside of the substrate attached to the adhesive arrangement.

[Object] To provide a thin-film manufacturing method, a thin-film manufacturing apparatus, a manufacturing method for a photoelectric conversion element, a manufacturing method for a logic circuit, a manufacturing method for a light-emitting element, and a manufacturing method for a light control element with which number-of-layers control and laminating and film-forming of different kinds of materials can be performed.

[Solving Means] A thin-film manufacturing method according to the present technology includes: bringing an electrically conductive film-forming target into contact with a first terminal and a second terminal; heating a first region that is a region of the film-forming target between the first terminal and the second terminal by applying voltage between the first terminal and the second terminal; supplying a film-forming raw material to the first region; and forming a thin film in the first region by controlling reaction time such that a thin film having a desired number of layers is formed.

A thin substrate processing device include a substrate processing unit configured to process a thin substrate, and a cooling unit configured to cool the thin substrate when the substrate processing unit is processing the thin substrate.