In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.

An evaporation apparatus comprises an evaporation chamber (2) and a moving device (3); the evaporation chamber (2) is provided with an evaporation source (21) therein and is provided with two regulating plates (22) on a side wall thereof; the moving device (3) is disposed on the bottom of the evaporation chamber (2). An evaporation method by use of the evaporation apparatus is also disclosed.

Methods and systems for depositing a thin film are disclosed. The methods and systems can be used to deposit a film having a uniform thickness on a substrate surface that has a non-planar three-dimensional geometry, such as a curved surface. The methods involve the use of a deposition source that has a shape in accordance with the non-planar three-dimensional geometry of the substrate surface. In some embodiments, multiple layers of films are deposited onto each other forming multi-layered coatings. In some embodiments, the multi-layered coatings are antireflective (AR) coatings for windows or lenses.

A method and system of depositing a coating on a substrate and/or simulating depositing a coating on a substrate.

Embodiments relate to a sputter chamber comprising both a target surface and an anode surface. The sputter chamber has both an ingress and an egress to allow passage of a gas. The sputter chamber further includes a target substrate. A secondary material flexibly changes the composition of the target substrate in-situ by changing coverage of the target by the secondary material. Gas entering the sputter chamber interacts with the changed composition of the target. The interaction discharges a plasma alloy and the alloy condenses on the anode surface in the sputter chamber. The condensed alloy produces an alloy film.

A thin-film deposition system deposits thin films on semiconductor wafers. The thin-film deposition system includes a machine learning based analysis model. The analysis model dynamically selects process conditions for a next deposition process by receiving static process conditions and target thin-film data. The analysis model identifies dynamic process conditions data that, together with the static process conditions data, result in predicted thin-film data that matches the target thin-film data. The deposition system then uses the static and dynamic process conditions data for the next thin-film deposition process.

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio I.sub.m/I.sub.c of a maximum intensity I.sub.m of a peak attributed to monoclinic yttrium oxide to a maximum intensity I.sub.c of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤I.sub.m/I.sub.c≤0.002.

A temperature-controlled shield for an evaporation source is described. The temperature-controlled shield is configured to provide a pre-heating zone or a post-cooling zone.

A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.

Mass production of nanoscale thin layer is essential for industrial uses. Reel-to-reel sputtering method is an effective deposition means for producing nanoscale thin layers on a flexible substrate in a vacuum chamber. The present disclosure provides an apparatus for depositing a thin sputtered film on the flexible substrate. By way of example, the apparatus includes a reel-to-reel sputtering system including a deposition or processing chamber, one or more sputtering devices in the processing chamber, a mask device disposed in the processing chamber, and one or more mask supporters coupled to the mask device. Further, the sputtering operation occurs in the processing chamber when the one or more sputtering devices are in operation as a flexible substrate moves under the mask device from a first roller set to a second roller set.