A manufacturing method for a head slider coated with Diamond-like Carbon (DLC) includes: providing a substrate that is to be finally made into a head slider; depositing a DLC layer on a surface of the substrate, with carbon plasma source being sputtered in a direction that is vertical to the surface of the substrate; and doping a fluorine-doping (F-doping) layer on the DLC layer. Whereby the head slider has good film adhesion performance, higher hardness, better wear resistance, lower surface energy to obtain good hydrophobicity and oleophobicity, and lower fly height in HDD.

A method of manufacturing a plurality of through-holes in a layer of first material, for example for the manufacturing of a probe comprising a tip containing a channel. To manufacture the through-holes in a batch process, a layer of first material is deposited on a wafer comprising a plurality of pits a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits; using the second layer as a shadow mask when depositing a third layer at an angle, covering a part of the first material with said third material at the central locations, and etching the exposed parts of the first layer using the third layer as a protective layer.

A method of manufacturing a component for a reference electrode assembly according to various aspects of the present disclosure includes providing a separator having first and second opposing surfaces. The method further includes sputtering a first current collector layer to the first surface via magnetron or ion beam sputtering deposition. A porosity of the separator is substantially unchanged by the sputtering. In one aspect, the method further includes sputtering a second current collector layer to the second surface via magnetron or ion beam sputtering deposition. In one aspect, the first current collector layer includes nickel and defines a first thickness of greater than or equal to about 200 nm to less than or equal to about 300 nm and the second current collector layer includes gold and defines a second thickness of greater than or equal to about 25 nm to less than or equal to about 100 nm.

The invention relates to a method for coating a substrate 40, a coating system for carrying out the method, and a coated body. In a first method step 62, the substrate 40 is to pretreated in a ion etching process. In a second method step 64, a first coating layer 56a with a thickness of 0.1 μm to 6 μm is deposited on the substrate 40 by means of a PVD process. In order to achieve a particularly high-quality and durable coating 50, the surface of the first coating layer 56a is treated by means of an ion etching process in a third method step 66, and an additional coating layer 56b with a thickness of 0.1 μm to 6 μm is deposited on the first coating layer 56a by means of a PVD process in a fourth method step 68. The coated body comprises at least two coating layers 56a, 56b, 56c, 56d with a thickness of 0.1 μm to 6 μm on a substrate 40, wherein an interface region formed by ion etching is arranged between the coating layers 56a, 56b, 56c, 56d.

An embodiment of the present disclosure provides a method of growing metal oxide nanowires by ion implantation, the method including the steps of: depositing a metal oxide thin film on a substrate; implanting ions into the metal oxide thin film; and heating the ion-implanted metal oxide thin film to grow metal oxide nanowires.

An orthopedic implant having a subsurface level ceramic layer generally includes a base material, an intermix layer molecularly integrated with the base material that includes a mixture of the base material and a plurality of subsurface level ceramic-based molecules implanted into the base material, and an integrated ceramic surface layer molecularly integrated with and extending from the intermix layer forming at least part of a molecular structure of an outer surface of the orthopedic implant. The integrated ceramic surface layer and the base material thereafter cooperate to sandwich the intermix layer in between.

The process for producing an orthopedic implant having an integrated ceramic surface layer includes steps for positioning the orthopedic implant inside a vacuum chamber, emitting a relatively high energy beam into the at least two different vaporized metalloid or transition metal atoms in the vacuum chamber to cause a collision therein to form ceramic molecules, and driving the ceramic molecules with the ion beam into an outer surface of the orthopedic implant at a relatively high energy such that the ceramic molecules implant therein and form at least a part of the molecular structure of the outer surface of the orthopedic implant, thereby forming the integrated ceramic surface layer.

Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 9 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 10 μΩ-cm and a thickness less than 300 Å.

A highly-ordered nano-structure array, formed on a substrate, mainly comprises a plurality of highly-ordered nano-structure units. Each of the highly-ordered nano-structure units forms a receiving compartment. One end of the receiving compartment opposite to the substrate has an opening. Each of the highly-ordered nano-structure units comprises at least one thin film layer. A periphery and a bottom of the receiving compartment are defined by an inner surface of a surrounding portion of the at least one thin film layer and a top surface of a bottom portion of the at least one thin film layer, respectively. The at least one thin film layer is made of at least one material selected from the group consisting of: metal, alloy, oxide, nitride, and sulfide.

An array of nanowires with a period smaller than 150 nm on the surface of curved transparent substrate can be used for applications such as optical polarizers. A curved hard nanomask can be used to manufacture such structures. This nanomask includes a substantially periodic array of substantially parallel elongated elements having a wavelike cross-section. The fabrication method of the nanomask uses ion beams.