A nanoscale plate structure includes base plates and rib plates with nanoscale thickness and macroscopic lateral dimensions. The base plate resides in the first plane, the ribs can reside out-of-plane and form at least one strengthening rib, and additional base plates can reside in planes parallel to the first plane. The strengthening rib can be patterned such that there is no straight line path extending through a lateral dimension of the plate structure that does not intersect the at least one base plate and the at least one strengthening rib. The plates and ribs used in the structure have a thickness between about 1 nm and about 100 nm. The plate structures can be fabricated using a conformal deposition method including atomic layer deposition.

A nanoscale plate structure includes base plates and rib plates with nanoscale thickness and macroscopic lateral dimensions. The base plate resides in the first plane, the ribs can reside out-of-plane and form at least one strengthening rib, and additional base plates can reside in planes parallel to the first plane. The strengthening rib can be patterned such that there is no straight line path extending through a lateral dimension of the plate structure that does not intersect the at least one base plate and the at least one strengthening rib. The plates and ribs used in the structure have a thickness between about 1 nm and about 100 nm. The plate structures can be fabricated using a conformal deposition method including atomic layer deposition.

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state ##STR00001##
where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,
E is NR or O,
n is 0, 1 or 2, m is 0, 1 or 2, and
R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state ##STR00001##
where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,
E is NR or O,
n is 0, 1 or 2, m is 0, 1 or 2, and
R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

This disclosure enables the generation and patterning of color centers with nanometer-scale spatial control in a variety of materials in repeatable fashion and without the use of radiation. Embodiments in accordance with the present disclosure employ a layer of vacancy-injection material disposed on a host-material, where the vacancy-injection material forms a compound with host-material atoms at elevated temperatures. During compound formation, lattice vacancies are generated in the host material and diffuse within the substrate lattice to bond with impurity atoms, thereby forming color centers. High-resolution lithographic patterning of the vacancy-injection film and the short diffusion lengths of the lattice vacancies enables nanometer-level spatial control over the lateral positions of the color centers. Furthermore, the depth of the color centers in the substrate can be controlled by controlling the coating material, thickness, anneal time, and anneal temperature.

This disclosure enables the generation and patterning of color centers with nanometer-scale spatial control in a variety of materials in repeatable fashion and without the use of radiation. Embodiments in accordance with the present disclosure employ a layer of vacancy-injection material disposed on a host-material, where the vacancy-injection material forms a compound with host-material atoms at elevated temperatures. During compound formation, lattice vacancies are generated in the host material and diffuse within the substrate lattice to bond with impurity atoms, thereby forming color centers. High-resolution lithographic patterning of the vacancy-injection film and the short diffusion lengths of the lattice vacancies enables nanometer-level spatial control over the lateral positions of the color centers. Furthermore, the depth of the color centers in the substrate can be controlled by controlling the coating material, thickness, anneal time, and anneal temperature.

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state ##STR00001##
where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,
E is NR or O,
n is 0, 1 or 2, m is 0, 1 or 2, and
R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state ##STR00001##
where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,
E is NR or O,
n is 0, 1 or 2, m is 0, 1 or 2, and
R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.

Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.