Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

Embodiments of the disclosed subject matter provide systems and methods of depositing a film on a selective area of a substrate. A first jet of a first material may be ejected from a first nozzle assembly of a jet head having a plurality of nozzle assemblies to form a first portion of a film deposition on the substrate. A second jet of a second material may be ejected from a second nozzle assembly of the plurality of nozzle assemblies, the second nozzle assembly being aligned with the first nozzle assembly parallel to a direction of motion between the plurality of nozzle assemblies and the substrate, and the second material being different than the first material. The second material may react with the first portion of the film deposition to form a composite film deposition on the substrate when using reactive gas precursors.

A method of making GaP window slabs having largest dimensions of greater than 4 inches and GaAs IR window slabs having largest dimensions of greater than 8 inches, includes slicing and dicing at least one smaller GaAs or GaP single crystal boule, which can be a commercial boule, to form a plurality of rectangular slabs. The slabs are ground to have precisely perpendicular edges, which are polished to be ultra-flat and ultra-smooth, for example to a flatness of at least ?/10, and a roughness Ra of less than 10 nanometers. The slab edges are then aligned and fused via optical-contacting/bonding to create a large GaAs or GaP slab having negligible bond interface losses. A conductive, doped GaAs or GaP layer can be applied to the window for EMI shielding in a subsequent vacuum deposition step, followed by applying anti-reflection (AR) coatings to one or both of the slab faces.

The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-ER.sup.3R.sup.4 (I) or R.sup.5E(ER.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminationscompared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

An optical system includes a housing, an imaging device housed within the housing, and a window in the housing providing an optical path through the housing to the imaging device. The window includes a transparent substrate and a coating over the transparent substrate. The coating is made of an electrically conductive semiconductor. The imaging device is sensitive to and the coating is transparent to at least one of MWIR and/or LWIR wavelengths.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

A gas-inlet element for a CVD reactor includes a gas distribution volume arranged rearward of a gas outlet plate, from which volume pipes having end portions protruding from the gas outlet plate on the front side emerge. The pipes extend into through openings in a shield plate assembly extending parallel to the gas outlet plate. The through openings have a first portion facing the gas outlet plate with a large diameter which is larger than the outer diameter of the respective end portions, and a second portion facing away from the gas outlet plate with a smaller diameter. In order to prevent temperature non-uniformities in the region of the through openings, the diameter of the second portion is smaller than the outer diameter of the respective end portions. The shield plate arrangement additionally consists of two shield plates with different thermal conductivities arranged one above another.

The invention relates to methods for producing an indium-containing layer by metal-organic vapor phase deposition, wherein the indium-containing layer is generated on a substrate in a reaction chamber, wherein the indium is delivered to the process in the form of an indium-containing precursor compound with the formula InR.sub.3, wherein the radicals R, independently of one another, are selected from alkyl radicals with 1 to 6 C atoms, characterized in that the delivery of the indium-containing precursor compound takes place in a solution that contains a solvent and the indium-containing precursor compound dissolved therein, wherein the solvent has at least one hydrocarbon with 1 to 8 carbon atoms.

The invention also relates to a solution consisting of a compound of formula InR.sub.3, wherein R are selected independently of one another from alkyl radicals with 1 to 6 C atoms, and at least one hydrocarbon having 1 to 8 carbon atoms, uses of the solution for producing an indium-containing layer by metal-organic vapor deposition, and devices for executing the method.

Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.