Embodiments of the present disclosure relate to apparatus and methods for cleaning an exhaust path of a semiconductor process tool. One embodiment provides an exhaust pipe section and a pipe cleaning assembly connected between a semiconductor process tool and a factory exhaust. The pipe cleaning assembly includes a residue remover disposed in the exhaust pipe section. The residue remover is operable to move in the exhaust pipe section to dislodge accumulated materials from an inner surface of the exhaust pipe section.

A component, a method of manufacturing a component, and a method of cleaning a component is provided. The component includes a gas flow system within the component, wherein the gas flow system fluidly couples one or more inlet holes and one or more outlet holes. The manufacturing of the component results in an arc shaped groove and a circumferential groove created in the body of the ring. The component undergoes one or more cleaning operations, including rinsing, baking, or purging operations. The cleaning operations remove debris or particles in or on the component, where the debris or particles can be caused during manufacturing of the component, or during use of the component in a semiconductor processing system.

According to one embodiment, a processing system includes a first vessel, a destination part to be transported, and a liquid sending part. The first vessel gathers a product being liquid temporarily. The destination part to be transported includes a second vessel to gather the product transported from the first vessel. The liquid sending part includes a first portion. The first portion includes a nozzle and a first mechanism. The nozzle discharges the product provided between the first vessel and the destination part to be transported. The first mechanism is purged by an inactive gas.

A method for recycling a substrate process component of a processing chamber is provided. In one example, the recycling process includes retrieving a reference dimension for the substrate process component. The substrate process component includes a side wall having a bottom surface, an outer surface, a pre-defined wall thickness between the bottom surface and the outer surface, and a residue layer. The reference dimension corresponds to the pre-defined wall thickness. The recycling process includes machining the substrate process component with a mechanical cutting tool. The machining includes securing the substrate process component to a work piece holder and passing the mechanical cutting tool across the outer surface in a machining operation controlled by a controller to remove the residue layer. The controller uses the reference dimension to control the machining operation so that the substrate process component has the reference dimension after removal of the residue layer.

A method of cleaning an inner wall surface (502) of a bell jar (500), by causing nozzles (112, 122) to discharge a cleaning liquid which contains abrasive particles, includes the steps of: (a) causing the nozzles (112, 122) to discharge the cleaning liquid at a discharge pressure at which erosion of the nozzles (112, 122), due to the cleaning liquid, occurs by not more than 500 m/hour; and (b) adjusting a distance between the inner wall surface (502) and the nozzles (112, 122) so that an impingement pressure, at which the cleaning liquid impinges on the inner wall surface (502), secures a pressure at which dirt on the inner wall surface (502) can be removed.

A detoxifying device 100 having an inner wall 104 that forms a flow passage 103 through which treatment gas flows includes a first piping 130 that forms a part of the flow passage 103, a replaceable piping section 170 that forms a part of the flow passage 103 at the position downstream of the first piping 130, and is connected thereto for sprinkling the cleaning water to remove the solid product adhering to the inner wall 104, and a second piping 150 that forms a part of the flow passage 103 at the position downstream of the piping section 170, and is connected thereto.

Embodiments of the present disclosure relate to apparatus and methods for cleaning an exhaust path of a semiconductor process tool. One embodiment provides an exhaust pipe section and a pipe cleaning assembly connected between a semiconductor process tool and a factory exhaust. The pipe cleaning assembly includes a residue remover disposed in the exhaust pipe section. The residue remover is operable to move in the exhaust pipe section to dislodge accumulated materials from an inner surface of the exhaust pipe section.

A device includes a substrate and a stressed layer disposed on a first surface of the substrate. The stressed layer includes: a first set of patterns having a predetermined geometry, size, and arrangement selected to control an equibiaxial stress field of the stressed layer, wherein the equibiaxial stress field varies in magnitude over the first surface of the substrate, and a second set of patterns etched into the first set of patterns and the substrate, the second set of patterns comprising a plurality of substantially parallel lines arranged to control at least a uniaxial stress field of the stressed layer, wherein the uniaxial stress field varies in magnitude over the first surface of the substrate.

A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

A method of evaluating cleanliness of a member having a silicon carbide surface, the method including bringing the silicon carbide surface into contact with a mixed acid of hydrofluoric acid, hydrochloric acid and nitric acid; concentrating the mixed acid brought into contact with the silicon carbide surface by heating; subjecting a sample solution obtained by diluting a concentrated liquid obtained by the concentration to quantitative analysis of metal components by Inductively Coupled Plasma-Mass Spectrometry; and evaluating cleanliness of the member having a silicon carbide surface on the basis of a quantitative result of metal components obtained by the quantitative analysis.