Embodiments described herein relate to a gas line cleaning system and a method of cleaning gas lines. The gas line cleaning system includes a connector having a first end and a second end, and a fluid system. The fluid system includes a fluid source configured to flow a fluid through a fluid conduit connected to the first end, and an ultrasonic transducer coupled to the fluid conduit configured to apply an ultrasonic energy to the fluid conduit to agitate the fluid. The ultrasonic energy creates a mechanical energy that reverberates in the fluid conduit and propagates into the fluid to remove particles that may have formed on an inside surface of a gas line connected to the second end and carry away particles inside the gas line.

A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

According to one embodiment, an exhaust system includes a first pump unit, a second pump unit, a shaft, and a motor. The first pump unit includes a first exhaust chamber, a first intake port, a first exhaust port, and a first rotor. The first intake port, the first exhaust port, and the first rotor are provided in the first exhaust chamber. The second pump unit includes a second exhaust chamber, a second intake port, a second exhaust port, and a second rotor. The second intake port, the second exhaust port, and the second rotor are provided in the second exhaust chamber. The shaft links the first rotor and the second rotor. The motor causes the first rotor, the second rotor, and the shaft to rotate.

Embodiments of the present disclosure relate to apparatus and methods for cleaning an exhaust path of a semiconductor process tool. One embodiment provides an exhaust pipe section and a pipe cleaning assembly connected between a semiconductor process tool and a factory exhaust. The pipe cleaning assembly includes a residue remover disposed in the exhaust pipe section. The residue remover is operable to move in the exhaust pipe section to dislodge accumulated materials from an inner surface of the exhaust pipe section.

An apparatus (1) for coaling a substrate (2) has a vacuum chamber (10) and at least one vacuum pump (11) which is designed to evacuate the vacuum chamber (10). At least one substrate mount (20) is arranged inside the vacuum chamber (10) and is designed to receive the substrate (2) to be coated. At least one coating-producing device is arranged inside the vacuum chamber (10). The vacuum chamber (10) also contains at least one cleaning device (4), which includes at least one adhesion roller (40). The adhesive roller (40) is configured to be passed over a surface (201) of the substrate (2) and is designed to bind particles (25) adhering to the substrate (2). A method for coating a substrate (2) utilizes the aforementioned apparatus.

Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Methods for manufacturing a diffuser plate for a PECVD chamber are provided. The methods provide for applying a compliant abrasive medium to round the sharp edges at corners of the output holes on a contoured downstream side of a gas diffuser plate. By rounding the edges of the output holes reduces the flaking of deposited materials on the downstream side of the gas diffuser plate and reduces the amount of undesirable particles generated during the PECVD deposition process.

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

A method for removing hard adhered objects is provided whereby adhered objects adhering to a jig in a film deposition process using crystal growth are efficiently removed while reducing damage to the jig. This adhered object removal method includes a step for preparing a jetting media with a lower hardness than the jig, a step for jetting the jetting media toward the jig, and a step for forming fracture starting points at the crystal grain boundary of the adhered object when the jetting media collides with the jig, then causing further collision of jetting media to cause the adhered object to dislodge at the crystal grain boundary.

A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.