Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.

Static thermal chemical vapor deposition treatment processes and static thermal chemical vapor deposition treatment systems are disclosed. The process includes providing an enclosed chamber configured to produce a material on a surface of an article within the enclosed chamber in response thermal energy being applied to a gaseous precursor, providing a liquid handling system in selective fluid communication with the enclosed chamber, flowing a liquid precursor through the liquid handling system, converting the liquid precursor to the gaseous precursor, and producing the material on the surface of the article in response to the thermal energy being applied to the gaseous precursor within the enclosed chamber. The system includes the enclosed chamber and the liquid handling system.

The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

Disclosed is a substrate treating method for treating a substrate. The substrate treating method includes a dehydrating step, a dispensing step (mixed liquid dispensing step), a solidified film forming step, and a sublimation step. In the dehydrating step, a mixed liquid is dehydrated. The mixed liquid contains a sublimable substance and a solvent. In the dispensing step, the mixed liquid dehydrated in the dehydrating step is dispensed onto an upper surface of the substrate. In the solidified film forming step, the solvent evaporates from the mixed liquid on the upper surface of the substrate. In the solidified film forming step, a solidified film containing the sublimable substance is formed on the upper surface of the substrate. In the sublimation step, the solidified film sublimates.

A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.

According to one embodiment, a vaporizing system comprises first and second tanks that can accumulate liquid source and first, second, and third pipes. The first pipe allows first gas to be sent out of the first tank. The second pipe allows second gas to be sent out of the second tank. The third pipe is connected to the first and second pipes and allows the first and second gas to be sent out to an external apparatus. The first tank is placed on an upper side of the second tank in a stacked manner.

In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.

An amount of particles generated when a source material is used is suppressed. A substrate is loaded into a process chamber, and the source material is sequentially flowed into an evaporator, and a mist filter constituted by assembling a plurality of at least two types of plates including holes disposed at different positions to be evaporated and supplied into the process chamber to process the substrate, and then, the substrate is unloaded from the process chamber.

A method comprises discharging from a metal vaporization device a vapor of a metal or a metal precursor to a chemical vapor infiltration device where the chemical vapor infiltration device is in fluid communication with the metal vaporization device. The chemical vapor infiltration device contains a preform containing ceramic fibers. The preform is infiltrated with a metallic coating or a coating of a metallic precursor along with a ceramic precursor coating. The metallic coating and/or the metallic precursor coating and the ceramic precursor coating are applied sequentially or simultaneously.

Embodiments of the present disclosure provide a reaction gas supply system and a control method. The reaction gas supply system includes a plurality of precursor containers and a plurality of supply regulator devices. The precursor container is connected to at least one of the reaction chambers. The plurality of precursor containers include at least a pair of precursor containers of an arbitrary combination. A supply regulator device is arranged between each pair of precursor containers. The supply regulator device is configured to connect the corresponding pair of precursor containers. With the reaction gas supply system and the control method of the present disclosure, the reaction gas may be ensured to be supplied stably, the utilization rate of the precursor may be increased, and the production efficiency and the product quality may be increased.