Disclosed are implementations for efficient purging of substrate carriers (and content held therein) and preventing external contaminants from entering a gas purge apparatus by coupling the gas purge apparatus to a substrate carrier, performing a first gas purging session of an environment of the substrate carrier, receiving a first signal of a first signal type, responsive to receiving the first signal, keeping the gas purge apparatus coupled to the substrate carrier, performing a second gas purging session of the environment of the substrate carrier, receiving a second signal of a second signal type, and, responsive to receiving the second signal, decoupling the purge apparatus from the substrate carrier.

A plasma processing apparatus for processing a workpiece with plasma includes a stage configured to place thereon the workpiece, a waveguide part configured to introduce plasma-generating electromagnetic waves in a VHF band into the plasma processing apparatus, and a dielectric window configured to transmit the electromagnetic waves introduced through the waveguide part to a plasma processing space formed on a workpiece placement side of the stage. The dielectric window is an annular member disposed so as to face a plasma processing space side of the stage and includes multiple convex portions, which protrude toward the stage and are arranged on the stage side along a circumferential direction at regular intervals. The convex portions each has a circumferential width of ⅛ to ⅜ of the wavelength of the electromagnetic waves inside the dielectric window.

Disclosed are implementations for efficient purging of substrate carriers (and content held therein) and preventing external contaminants from entering a gas purge apparatus by coupling the gas purge apparatus to a substrate carrier, performing a first gas purging session of an environment of the substrate carrier, receiving a first signal of a first signal type, responsive to receiving the first signal, keeping the gas purge apparatus coupled to the substrate carrier, performing a second gas purging session of the environment of the substrate carrier, receiving a second signal of a second signal type, and, responsive to receiving the second signal, decoupling the purge apparatus from the substrate carrier.

A substrate etching apparatus for etching a substrate, the substrate etching apparatus includes a treatment container configured to accommodate a substrate, a stage on which the substrate is placed, the stage being disposed in the treatment container, a gas supply configured to supply a treatment gas from an upper space above the stage toward the stage, and a gas exhauster configured to evacuate an interior of the treatment container. The gas supply includes a central region facing a central part of the stage and an outer peripheral region having a same central axis as the central region and configured to surround the central region. The gas supply is capable of supplying the treatment gas to each of the central region and the outer peripheral region.

A substrate processing system includes a processing chamber, a substrate support including a plurality of heater zones arranged in the processing chamber, a gas delivery system configured to deliver process gases to the processing chamber, and a controller configured to communicate with the gas delivery system and the plurality of heater zones, initiate a first treatment step of a process during a transient temperature period after a substrate is arranged on the substrate support and prior to the substrate reaching a steady-state temperature of the substrate support, and adjust heating to each of the plurality of heater zones during the first treatment step based on average heat functions determined for corresponding ones of the plurality of heater zones during a period corresponding to the first treatment step.

A gas supplying unit of a substrate treating apparatus is proposed. The gas supplying unit includes: a gas distribution plate having a first surface and a second surface opposite the first surface, and having first gas supply holes formed through the first surface and the second surface; a shower head having a third surface being in close contact with the second surface and a fourth surface opposite the third surface, and having second gas supply holes formed through the third surface and the fourth surface to be connected to the first gas supply holes; and heat transfer members having first ends inserted in at least one of the gas distribution plate and the shower head and second ends being in contact with any one of the shower head and the gas distribution plate.

An apparatus and method for loading a plurality of substrates into a substrate holder in a loading chamber of a deposition reactor to form a vertical stack of horizontally oriented substrates within said substrate holder, for turning the substrate holder to form a horizontal stack of vertically oriented substrates, and for lowering the substrate holder into a reaction chamber of the deposition reactor for deposition. The technical effects achieved are: a top loading system for a vertical flow deposition reactor in which the substrates can be loaded with horizontal orientation, eliminating the need for flipping each substrate separately by flipping the whole substrate holder and minimizing a loading distance in a reactor cluster.

An injector configured for arrangement within a reactor of a vertical furnace to inject gas in the reactor is provided. The injector is made substantial elongated and configured with an internal gas conduction channel to transport gas from a first end of the injector to a second end of the injector. An outer sidewall of the injector may be tapered towards the second end over at least 10%, preferably 30% and most preferably 50% of the length of the injector to increase tolerances for fitting the injector in the tube.

A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section having at least one ring extending upward for contacting a bottom surface of a substrate, and wherein the radially inward section lacks a ring extending upward from the face.

A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.