Provided is an apparatus for electro-forming. The apparatus for electro-forming includes a plating bath which is a space where a substrate is plated and a clamp disposed within the plating bath and configured to grasp the substrate disposed in a horizontal direction. The apparatus for electro-forming further includes an assembly including an anode spaced above the substrate and connected to an external power supply and a plating solution supply unit spaced above the substrate and configured to supply a plating solution. The apparatus for electro-forming also includes a driving unit configured to reciprocate the assembly in a horizontal direction at a distance from the substrate. The assembly further includes an insulator between the anode and the plating solution supply unit.

A touch input device and a method for manufacturing the same are disclosed. The touch input device includes: a first base including a metal compound; a first pattern groove formed over one surface of the first base; a first sense pattern formed over the first pattern groove and including a conductive material; a second base stacked over the first base, and configured to include a metal compound; a second pattern groove formed over one surface of the second base; a second sense pattern formed over the second pattern groove, including a conductive material, and spaced apart from the first sense pattern; and a line unit connecting the first sense pattern and the second sense pattern to an integrated-circuit.

A touch input device and a method for manufacturing the same are disclosed. The touch input device includes: a first base including a metal compound; a first pattern groove formed over one surface of the first base; a first sense pattern formed over the first pattern groove and including a conductive material; a second base stacked over the first base, and configured to include a metal compound; a second pattern groove formed over one surface of the second base; a second sense pattern formed over the second pattern groove, including a conductive material, and spaced apart from the first sense pattern; and a line unit connecting the first sense pattern and the second sense pattern to an integrated-circuit.

The present invention provides for depositing a desired pattern (31) of magnetic material (30) on a non-magnetic substrate (20). Control of the deposition pattern (31) is achieved by use of a magnetised template (10) shaped to correspond to the desired deposition pattern. In use, the template (10) is placed behind the substrate (20). Subsequently, the front surface of the substrate (20) is exposed to a solution containing the magnetic material (30) to be deposited. The magnetic material (30) is attracted to the magnetised template (10) and consequently is deposited in a pattern (31) covering areas corresponding to the shape of the template (10).

The present invention relates to methods and systems that utilize a catalyst or thin metal film by atomic level deposition (ALD) of one or more metals that allows fine traces deposition to the trench formed in a dielectric material, thereby minimizing potential physical damage due to embedded conductor format and making the fine space between traces to prevent electromigration in the traces.

A controller performs an adjustment processing including: forming a film on a surface of a substrate by a film forming unit; removing a peripheral portion of the film by the film forming unit; acquiring surface information indicating a state of the surface of the substrate including the film, from which the peripheral portion has been removed, by a surface inspection unit and adjusting a cut width of the peripheral portion based on the surface information; and peeling the film, from which the peripheral portion has been removed, by the film forming unit, and a process processing including: forming the film on the surface of the substrate by the film forming unit; and removing the peripheral portion by the cut width adjusted in the adjustment processing in the film forming unit.

A method of making a fusion bonded circuit structure. A substrate is provided with a seed layer of a conductive material. A first resist layer is deposited on the seed layer. The first resist layer is processed to create first recesses corresponding to a desired first circuitry layer. The first recesses expose, portions of the seed layer of conductive material. The substrate is electroplated to create first conductive traces defined by the first recesses. The first resist layer is removed to reveal the first conductive traces. The substrate is etched to remove exposed portions of the seed layer adjacent the first conductive traces. A portion of the seed layer is interposed between the first conductive traces and the substrate. A first layer of LCP is fusion boned to the first major surface of the substrate to encapsulate the first conductive traces in an LCP material. The first LCP layer can be laser drilled to expose the conductive traces.

A method of treating a surface of an aluminum busbar includes pre-conditioning the surface of the busbar, anodizing one portion of the surface of the busbar, and plating another portion of the surface of the busbar with at least one metal. A fixture used to secure a busbar for a treatment process is also disclosed.

Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum plate defining a plurality of apertures. The plate may include a nickel coating on a textured aluminum plate to provide for adhesion. Implementing the present technology, the nickel coating may be firmly affixed with or without first applying an intermediate adhesion layer. Deleterious components from the intermediate adhesion layer (if present) may not contaminate substrates as readily as a consequence of the texturing of the aluminum plate. The contamination from the intermediate adhesion layer is undesirable and may electrically compromise semiconductor devices during processing.

A controller performs an adjustment processing including: forming a film on a surface of a substrate by a film forming unit; removing a peripheral portion of the film by the film forming unit; acquiring surface information indicating a state of the surface of the substrate including the film, from which the peripheral portion has been removed, by a surface inspection unit and adjusting a cut width of the peripheral portion based on the surface information; and peeling the film, from which the peripheral portion has been removed, by the film forming unit, and a process processing including: forming the film on the surface of the substrate by the film forming unit; and removing the peripheral portion by the cut width adjusted in the adjustment processing in the film forming unit.