A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.

Provided is a single crystal diamond having a lowered dislocation density. The single crystal diamond (10) is provided with single crystal diamond layers (2, 3). One single crystal diamond layer (2) is formed on a diamond substrate (1) and contains point defects. The other single crystal diamond layer (3) is grown on the single crystal diamond layer (2). The single crystal diamond layers (2, 3) have a lower dislocation density than the diamond substrate.

A method of selectively controlling materials structure in solution based chemical synthesis and deposition of materials by controlling input energy from pulsed energy source includes determining solution conditions, searching and/or determining energy barrier(s) of a desired materials structure formation, applying precursor solution with selected solution condition onto a substrate, and applying determined input energy from a pulsed energy source with a selected condition to the substrate, thereby nucleating and growing the crystal.

A semiconductor wafer comprises a substrate wafer of monocrystalline silicon and a dopant-containing epitaxial layer of monocrystalline silicon atop the substrate wafer, wherein a non-uniformity of the thickness of the epitaxial layer is not more than 0.5% and a non-uniformity of the specific electrical resistance of the epitaxial layer is not more than 2%.

A method for growing at least one III/V nano-ridge on a silicon substrate in an epitaxial growth chamber. The method comprises: patterning an area on a silicon substrate thereby forming a trench on the silicon substrate; growing the III/V nano-ridge by initiating growth of the III/V nano-ridge in the trench, thereby forming and filling layer of the nano-ridge inside the trench, and by continuing growth out of the trench on top of the filling layer, thereby forming a top part of the nano-ridge, wherein at least one surfactant is added in the chamber when the nano-ridge is growing out of the trench.

Disclosed herein is a method of fabricating hexagonal boron nitride in which hexagonal boron nitride is epitaxially grown. A method of fabricating hexagonal boron nitride includes placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of 15% or less with hexagonal boron nitride (h-BN) in a chamber; and growing hexagonal boron nitride on the catalytic metal at a temperature of 800 C. or lower while supplying a nitrogen source and a boron source into the chamber.

A method for manufacturing an ultra small grain-size nanocrystalline diamond film having a SiV photoluminescence, comprises: (1) manufacturing, on a single crystal silicon substrate, a nanocrystalline diamond film having a SiV photoluminescence by using a microwave plasma chemical vapor deposition method; (2) performing oxygen plasma etching treatment on the nanocrystalline diamond film obtained in step (1) for 5-30 min by using an oxygen plasma bombardment method in a mixed gas plasma having an oxygen-nitrogen gas volume ratio of 1:4-6 and at an atmospheric pressure of 0.5-6 torr and a microwave power of 600-1000 W, thereby obtaining the ultra small grain-size nanocrystalline diamond film having the SiV photoluminescence.

Provided is a semiconductor epitaxial structure including a nucleation layer disposed on a substrate; a buffer layer disposed on the nucleation layer; a semiconductor layer disposed on the buffer layer; a barrier layer disposed on the semiconductor layer; and a cap layer disposed on the barrier layer. In a case where a bowing of the semiconductor epitaxial structure is less than or equal to +/30 m, a maximum value or a minimum value of a ratio of a thickness of the buffer layer to a thickness of the semiconductor layer is represented as following formula: Y=aX1bX2+cX3, X10 nm, X2750 nm, X3515 nm, wherein X1 is a thickness of the nucleation layer, X2 is the thickness of the buffer layer, X3 is the thickness of the semiconductor layer, a, b and c are constants respectively, and Y is a ratio of X3 to X2.

A method of making an ordered graphene structure includes exposing a substrate to a laser beam to locally melt a portion of the substrate, exposing the substrate to a laser beam in the presence of a carbon source, to form a nucleation site for a graphene crystal, and either a) moving either the substrate or the laser beam relative to the other, or b) decreasing the laser beam power, in order to increase the size of the graphene crystal, thereby forming an ordered graphene structure. The ordered structure can be a plurality of columns, hexagons, or quadrilaterals. Each ordered structure can have a single crystal of graphene. A polymer coating can be formed on the ordered graphene structure to form a coated graphene structure.

A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.