A method of fabricating a multicolor light-emitting diode (LED) display includes forming a first LED layer on a first release layer comprising a first two-dimensional (2D) material disposed on a first substrate. The first LED layer is configured to emit light at a first wavelength. The method also includes transferring the first LED layer from the first release layer to a host substrate and forming a second LED layer on a second release layer comprising a second 2D material disposed on a second substrate. The second LED layer is configured to emit light at a second wavelength. The method also includes removing the second LED layer from the second release layer and disposing the second LED layer on the first LED layer.

The present invention relates to a method for assembling molecules on the surface of a two-dimensional material formed on a substrate, the method comprises: forming a spacer layer comprising at least one of an electrically insulating compound or a semiconductor compound on the surface of the two-dimensional material, depositing molecules on the spacer layer, annealing the substrate with spacer layer and the molecules at an elevated temperature for an annealing time duration, wherein the temperature and annealing time are such that at least a portion of the molecules are allowed to diffuse through the spacer layer towards the surface of the two-dimensional material to assemble on the surface of the two-dimensional material. The invention also relates to an electronic device.

Methods for fabricating a graphene nanoribbon array in accordance with several embodiments of the present invention can include the steps of depositing PMMA dots on a substrate in an mn grid, to selectively seed graphene flakes on the substrate by controlling the growth of the graphene flakes on the substrate during the graphene deposition. The methods can further include the steps of masking the graphene flake edges with an insulator layer, at a very low deposition time or at a lower precursor concentration, to ensure there are not enough insulator molecules to form a complete layer over the flakes, but only enough insulator to form around the flakes edges. Once the graphene flake edges are masked, the bulk graphene can be etched, and the masking insulator can be removed to expose the resulting graphene nanoribbon.

A graphene fabrication method which can obtain graphene of high quality and good characteristics by adjusting a size and a shape of a domain of graphene is provided. The method for fabricating graphene according to the present disclosure includes: a graphene pattern forming step of forming a graphene forming pattern on a graphene growth substrate; and a graphene forming step of forming a graphene layer on the graphene growth substrate having the graphene forming pattern formed thereon.

A graphene fabrication method which can obtain graphene of high quality and good characteristics by adjusting a size and a shape of a domain of graphene is provided. The method for fabricating graphene according to the present disclosure includes: a graphene pattern forming step of forming a graphene forming pattern on a graphene growth substrate; and a graphene forming step of forming a graphene layer on the graphene growth substrate having the graphene forming pattern formed thereon.

The present disclosure relates to a polymer for transferring graphene, including: polystyrene; and a compound represented by the following Chemical Formula 1:

##STR00001## (in Chemical Formula 1, R.sub.1 and R.sub.2 are each independently H, linear or branched C.sub.1-C.sub.20 alkyl, which can be substituted, and C.sub.6-C.sub.20 aryl, which can be substituted, and the substitution is carried out with C.sub.1-C.sub.6 alkyl or C.sub.6-C.sub.20 aryl, and n is 1 to 10).

A method for preparation of high-quality graphene on the surface (0001) of silicon carbide by superficial graphitisation of the compound in a stream of silicon atoms from an external sublimation source is disclosed.

A method for preparation of high-quality graphene on the surface (0001) of silicon carbide by superficial graphitisation of the compound in a stream of silicon atoms from an external sublimation source is disclosed.

A method includes a graphene precursor formation process of: heating a SiC substrate to sublimate Si atoms in a Si surface of the SiC substrate so that a graphene precursor is formed; and stopping the heating before the graphene precursor is covered with graphene. A SiC substrate to be treated in the graphene precursor formation process is provided with a step including a plurality of molecular layers. The step has a stepped structure in which a molecular layer whose C atom has two dangling bonds is disposed closer to the surface than a molecular layer whose C atom has one dangling bond.

A method includes a graphene precursor formation process of: heating a SiC substrate to sublimate Si atoms in a Si surface of the SiC substrate so that a graphene precursor is formed; and stopping the heating before the graphene precursor is covered with graphene. A SiC substrate to be treated in the graphene precursor formation process is provided with a step including a plurality of molecular layers. The step has a stepped structure in which a molecular layer whose C atom has two dangling bonds is disposed closer to the surface than a molecular layer whose C atom has one dangling bond.