The present disclosure relates to an apparatus for fluidised-bed chemical vapour deposition from a gaseous phase allowing the temperature of the fluidised bed to be stabilised during the deposition and also to an associated method for its implementation, the apparatus being characterised in that it comprises a porous thermal insulator present in an inlet zone and configured to be passed through by the gaseous phase, said porous thermal insulator having an effective thermal conductivity at 20° C. less than or equal to 3.5 W.Math.m-1.Math.K-1.

The present disclosure relates to an apparatus for fluidised-bed chemical vapour deposition from a gaseous phase allowing the temperature of the fluidised bed to be stabilised during the deposition and also to an associated method for its implementation, the apparatus being characterised in that it comprises a porous thermal insulator present in an inlet zone and configured to be passed through by the gaseous phase, said porous thermal insulator having an effective thermal conductivity at 20° C. less than or equal to 3.5 W.Math.m-1.Math.K-1.

An object of the present invention is to provide a novel technique capable of suppressing the occurrence of cracks in an AlN layer.

The present invention is a method for manufacturing an AlN substrate, the method including: an embrittlement processing step S10 of reducing strength of a SiC underlying substrate 10; and a crystal growth step S20 of forming an AlN layer 20 on the SiC underlying substrate 10. In addition, the present invention is a method for suppressing the occurrence of cracks in the AlN layer 20, the method including the embrittlement processing step S10 of reducing the strength of the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.

An object of the present invention is to provide a novel technique capable of suppressing the occurrence of cracks in an AlN layer.

The present invention is a method for manufacturing an AlN substrate, the method including: an embrittlement processing step S10 of reducing strength of a SiC underlying substrate 10; and a crystal growth step S20 of forming an AlN layer 20 on the SiC underlying substrate 10. In addition, the present invention is a method for suppressing the occurrence of cracks in the AlN layer 20, the method including the embrittlement processing step S10 of reducing the strength of the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.

In one example, a method for forming a coating system including a bond coat and an environmental barrier coating on a ceramic or CMC substrate, e.g., with an abradable coating on the environmental barrier coating. The method may include depositing a bond coat on a ceramic or ceramic matrix composite (CMC) substrate to form an as-deposited bond coat; heat treating the as-deposited bond coat following the deposition of the as-deposited bond coat on the substrate to form a heat treated bond coat; depositing an environment barrier coating (EBC) layer on the heat treated bond coat to form as deposited EBC layer; and heat treating the as-deposited EBC layer to form a heat treated EBC layer.

In one example, a method for forming a coating system including a bond coat and an environmental barrier coating on a ceramic or CMC substrate, e.g., with an abradable coating on the environmental barrier coating. The method may include depositing a bond coat on a ceramic or ceramic matrix composite (CMC) substrate to form an as-deposited bond coat; heat treating the as-deposited bond coat following the deposition of the as-deposited bond coat on the substrate to form a heat treated bond coat; depositing an environment barrier coating (EBC) layer on the heat treated bond coat to form as deposited EBC layer; and heat treating the as-deposited EBC layer to form a heat treated EBC layer.

Provided are a SmFeN magnetic powder which is superior not only in water resistance and corrosion resistance but also in hot water resistance, and a method of preparing the powder. The present invention relates to a method of preparing a magnetic powder, comprising: plasma-treating a gas; surface-treating a SmFeN magnetic powder with the plasma-treated gas; and forming a coat layer on the surface of the surface-treated SmFeN magnetic powder.

Provided are a SmFeN magnetic powder which is superior not only in water resistance and corrosion resistance but also in hot water resistance, and a method of preparing the powder. The present invention relates to a method of preparing a magnetic powder, comprising: plasma-treating a gas; surface-treating a SmFeN magnetic powder with the plasma-treated gas; and forming a coat layer on the surface of the surface-treated SmFeN magnetic powder.

An automated preparation method of a SiC.sub.f/SiC composite flame tube, comprising the following steps: preparing an interface layer for a SiC fiber by a chemical vapor infiltration process, and obtaining the SiC fiber with a continuous interface layer; laying a unidirectional tape on the SiC fiber with the continuous interface layer and winding the SiC fiber with the continuous interface layer to form and obtaining a preform of a net size molding according to a fiber volume and a fiber orientation obtained in a simulation calculation; and adopting a reactive melt infiltration process and the chemical vapor infiltration process successively for a densification and obtaining a high-density SiC.sub.f/SiC composite flame tube in a full intelligent way. The SiC.sub.f/SiC composite flame tube prepared by the present disclosure not only has a high temperature resistance, but also has a low thermal expansion coefficient, high thermal conductivity and high thermal shock resistance.

A process for making low resistivity CVC silicon carbide. Applicants have developed a better process for adding nitrogen to silicon carbide which has the safety economic advantages of doping with N.sub.2 with the ease of N.sub.2 release advantages of using NH.sub.3. Preferred embodiments of the present invention include a NH.sub.3 generator with a source of H.sub.2 and a source of N.sub.2 and an arc discharge apparatus adapted to produce NH.sub.3 gas from a combination of the H.sub.2 and N.sub.2 sources.