A scintillator for positron emission tomography is provided. The scintillator includes a garnet compound of a formula of A.sub.3B.sub.2C.sub.3O.sub.12 and an activator ion consisting of cerium. A.sub.3 is A.sub.2X. X consists of at least one lanthanide element. A.sub.2 is selected from the group consisting of (i), (ii), (iii), and any combination thereof, wherein (i) consists of at least one lanthanide element, (ii) consists of at least one group I element selected from the group consisting of Na and K, and (iii) consists of at least one group II element selected from the group consisting of Ca, Sr, and Ba. B.sub.2 consists of Sn, Ti, Hf, Zr, and any combination thereof. C.sub.3 consists of Al, Ga, Li, and any combination thereof. The garnet compound is doped with the activator ion.

An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios satisfying formulae (1) to (3): 0.01≤Ga/(In+Ga+Sn)≤0.30 . . . (1); 0.01≤Sn/(In+Ga+Sn)≤0.40 . . . (2); and 0.55≤In/(In+Ga+Sn)≤0.98 . . . (3), and Al at an atomic ratio satisfying a formula (4): 0.05≤Al/(In+Ga+Sn+Al)≤0.30 . . . (4).

A temperature-stable modified NiO—Ta.sub.2O.sub.5-based microwave dielectric ceramic material and a preparation method thereof are provided. Using ion doping modification to form solid solution structure is an important measure to adjust microwave dielectric properties, especially the temperature stability. Based on formation rules of the solid solution, ion replacement methods are designed including Ni.sup.2+ ions are replaced by Cu.sup.2+ ions, and (Ni.sub.1/3Ta.sub.2/3).sup.4+ composite ions are replaced by [(Al.sub.1/2Nb.sub.1/2).sub.ySn.sub.1-y].sup.4+ composite ions, which considers that cations with similar ionic radii to Ni.sup.2+ and Ta.sup.5+ ions can be introduced into the NiTa.sub.2O.sub.6 ceramic for doping under the same coordination environment (coordination number=6), and therefore a ceramic material with the NiTa.sub.2O.sub.6 solid solution structure can be obtained. The microwave dielectric ceramic material with excellent temperature stability and low loss is finally prepared by adjusting molar contents of each of doped ions, and its microwave dielectric properties are excellent.

Provided are metal oxide varistors comprising a sintered ceramic, in which the ceramic comprises, by weight, about 91.0% to about 97.0% ZnO, at least 0.3% Mn, at least 0.4% Bi, at least 1.0% Sb, and 0.50% or less Co. The metal oxide varistors as disclosed herein may exhibit reduced power dissipation, improved thermal stability, and may be produced at a lower cost relative to conventional MOV devices.

Provided is a piezoelectric single crystal-polycrystal ceramic composite, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal-polycrystal ceramic composite. The piezoelectric single crystal-polycrystal ceramic composite shows that complexation is carried out by the optimization of a ratio between grain size distributions of a piezoelectric single crystal and polycrystal ceramic grains, and a volume ratio of the contained piezoelectric single crystal so that mass production simultaneously with excellent piezoelectric characteristics of the piezoelectric single crystal can be realized, and the cost of production can be reduced, so the piezoelectric single crystal-polycrystal ceramic composite can be applied to piezoelectric and dielectric application components, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensors, dielectric capacitors, electric field-generating transducers, and electric field and vibration-generating transducers, using the piezoelectric single crystal-polycrystal ceramic composite, and the piezoelectric single crystal-polycrystal ceramic composite can enhance piezoelectric characteristics and competitiveness in prices.

A high permittivity antiferroelectric composition and a manufacturing method thereof aim to provide an antiferroelectric, which has a Pb.sub.xLa.sub.1-x([Zr.sub.1-YSn.sub.Y].sub.ZTi.sub.1-Z) composition, is sintered at low temperatures, and has a high density and a high permittivity.

A sintered composite ceramic, including: a lithium-garnet major phase; and a lithium-rich minor phase, such that the lithium-rich minor phase comprises Li.sub.xZrO.sub.(x+4)/2, with 2≤x≤10.

Provided are a Mn—Zn—O sputtering target that can be used for DC sputtering and a production method therefor. The Mn—Zn—O sputtering target has a chemical composition containing Mn, Zn, O, and an element X (X is one or two elements selected from the group consisting of W and Mo). A surface to be sputtered of the target has an arithmetic mean roughness Ra of 1.5 μm or less or a maximum height Ry of 10 μm or less.

An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.