A bonded body is provided that is formed by bonding a metal member formed from copper, nickel, or silver, and an aluminum alloy member formed from an aluminum alloy of which a solidus temperature is lower than a eutectic temperature of aluminum and a metal element that constitutes the metal member. The aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding. A chill layer, in which a Si phase of which an aspect ratio of a crystal grain is 2.5 or less and a crystal grain diameter is 15 m or less is dispersed, is formed on a bonding interface side with the metal member in the aluminum alloy member. The thickness of the chill layer is set to 50 m or greater.

A method for producing a member for a semiconductor manufacturing apparatus 10 includes (a) a step of providing an electrostatic chuck 20, a supporting substrate 30, and a metal bonding material 401, the electrostatic chuck being made of a ceramic and having a form of a flat plate, the supporting substrate including a composite material having a difference in linear thermal expansion coefficient at 40 to 570 C. from the ceramic of 0.210.sup.6/K or less in absolute value, and (b) a step of interposing the metal bonding material 401 between a concave face 32 of the supporting substrate 30 and a face 23 of the electrostatic chuck 20 opposite to a wafer mounting face 22, and thermocompression bonding the supporting substrate 30 and the electrostatic chuck 20 at a predetermined temperature to deform the electrostatic chuck 20 to the shape of the concave face 32.

A bonded body is provided in which an aluminum alloy member formed from an aluminum alloy, and a metal member formed from copper, nickel, or silver are bonded to each other. The aluminum alloy member is constituted by an aluminum alloy in which a concentration of Si is in a range of 1 mass % to 25 mass %. The aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding. A compound layer, which is formed through diffusion of Al of the aluminum alloy member and a metal element of the metal member, is provided at a bonding interface between the aluminum alloy member and the metal member. A Mg-concentrated layer, in which a concentration of Mg is to 3 mass % or greater, is formed at the inside of the compound layer, and the thickness of the Mg-concentrated layer is in a range of 1 m to 30 m.

In an aluminum material that constitutes a bonding surface of a metal layer, and an aluminum material that constitutes a bonding surface of a heat sink, any one aluminum material is set to a high-purity aluminum material with high aluminum purity, and the other aluminum material is set to a low-purity aluminum material with low aluminum purity. The difference in a concentration of a contained element other than Al between the high-purity aluminum material and the low-purity aluminum material is set to 1 at % or greater, and the metal layer and the heat sink are subjected to solid-phase diffusion bonding.

A method of producing a bonded body is disclosed in which a ceramic member made of ceramics and a Cu member made of Cu or a Cu alloy are bonded to each other, the method including: a laminating step of laminating the ceramic member and the Cu member in a state where a CuP-based brazing filler material containing 3 mass % to 10 mass % of P and an active metal material are interposed therebetween; and a heating step of heating the ceramic member and the Cu member which are laminated.

A bonded body is provided in which an aluminum alloy member formed from an aluminum alloy, and a metal member formed from copper, nickel, or silver are bonded to each other. The aluminum alloy member is constituted by an aluminum alloy in which a concentration of Si is in a range of 1 mass % to 25 mass %. The aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding. A compound layer, which is formed through diffusion of Al of the aluminum alloy member and a metal element of the metal member, is provided at a bonding interface between the aluminum alloy member and the metal member. A Mg-concentrated layer, in which a concentration of Mg is to 3 mass % or greater, is formed at the inside of the compound layer, and the thickness of the Mg-concentrated layer is in a range of 1 m to 30 m.

A method of manufacturing a bonded body is provided in which a copper member (13B) formed from copper or a copper alloy, and an aluminum member (31) formed from an aluminum alloy in which a Si concentration is set in a range of 1 mass % to 25 mass % are bonded to each other. In the aluminum member before the bonding, D90 of an equivalent circle diameter of a Si phase at a bonding surface with the copper member is set in a range of 1 m to 8 m, and the aluminum member and the copper member are subjected to solid-phase diffusion bonding.

To provide a power-module substrate and a manufacturing method thereof in which small voids are reduced at a bonded part and separation can be prevented. Bonding a metal plate of aluminum or aluminum alloy to at least one surface of a ceramic substrate by brazing, when a cross section of the metal plate is observed by a scanning electron microscope in a field of 3000 magnifications in a depth extent of 5 m from a bonded interface between the metal plate and the ceramic substrate in a width area of 200 m from a side edge of the metal plate, residual-continuous oxide existing continuously by 2 m or more along the bonded interface has total length of 70% or less with respect to a length of the field.

In a power-module substrate unit, a circuit layer is structured by a plurality of small circuit layers; a ceramic substrate layer is structured by at least one plate; the small circuit layers are formed to have a layered structure having a first aluminum layer bonded on one surface of the ceramic substrate layer and a first copper layer bonded on the first aluminum layer by solid diffusion; a radiation plate is made of copper or copper alloy; the metal layer and the radiation plate are bonded by solid diffusion.

A power-module substrate including a circuit layer having a first aluminum layer bonded on one surface of a ceramic substrate and a first copper layer bonded on the first aluminum layer by solid-phase-diffusion bonding, and a metal layer having a second aluminum layer made from a same material as the first aluminum layer and bonded on the other surface of the ceramic substrate and a second copper layer made from a same material as the first copper layer and bonded on the second aluminum layer by solid-phase-diffusion bonding, in which a thickness t1 of the first copper layer is 1.7 mm to 5 mm, a sum of the thickness t1 of the first copper layer and a thickness t2 of the second copper layer is 7 mm or smaller, and a ratio t2/t1 is larger than 0 and 1.2 or smaller except for a range of 0.6 to 0.8.