Power module substrate, heat-sink-attached power-module substrate, and heat-sink-attached power module

Abstract

A power-module substrate including a circuit layer having a first aluminum layer bonded on one surface of a ceramic substrate and a first copper layer bonded on the first aluminum layer by solid-phase-diffusion bonding, and a metal layer having a second aluminum layer made from a same material as the first aluminum layer and bonded on the other surface of the ceramic substrate and a second copper layer made from a same material as the first copper layer and bonded on the second aluminum layer by solid-phase-diffusion bonding, in which a thickness t1 of the first copper layer is 1.7 mm to 5 mm, a sum of the thickness t1 of the first copper layer and a thickness t2 of the second copper layer is 7 mm or smaller, and a ratio t2/t1 is larger than 0 and 1.2 or smaller except for a range of 0.6 to 0.8.

Claims

1. A power-module substrate comprising a circuit layer which is stacked on one surface of a ceramic substrate and a metal layer which is stacked on the other surface of the ceramic substrate, wherein the circuit layer comprises a first aluminum layer which is bonded on the one surface of the ceramic substrate and a first copper layer which is bonded on the first aluminum layer by solid-phase-diffusion bonding, the metal layer comprises a second aluminum layer, which is made from a same material as that of the first aluminum layer and bonded on the other surface for the ceramic substrate, and a second copper layer, which is made from a same material as that of the first copper layer and bonded on the second aluminum layer by solid-phase-diffusion bonding, a thickness t1 of the first copper layer is 1.7 mm or larger and 5 mm or smaller (1.7 mmt15 mm), a sum of the thickness t1 of the first copper layer and a thickness t2 of the second copper layer is 7 mm or smaller (t1+t27 mm), and a ratio t2/t1 between the thickness t1 of the first copper layer and the thickness t2 of the second copper layer is in a range larger than 0 and 1.2 or smaller (0<t2/t11.2), except for a range of 0.6 or larger and 0.8 or smaller (0.6t2/t10.8).

2. A heat-sink-attached power-module substrate comprising the power-module substrate and a heat sink which is bonded on the second copper layer according to claim 1.

3. A heat-sink-attached power module comprising the heat-sink-attached power-module substrate and a semiconductor element which is bonded on the circuit layer according to claim 2.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a sectional view explaining an outline of a heat-sink-attached power module including a power-module substrate of an embodiment according to the present invention.

(2) FIG. 2 is a sectional view explaining an essential part of a bonding interface between a first aluminum layer and a first copper layer in a circuit layer.

(3) FIG. 3 is a sectional view explaining a summary of a producing method of the power-module substrate of the embodiment according to the present invention.

(4) FIG. 4 is a sectional view explaining a summary of a producing method of the heat-sink-attached power module of the embodiment according to the present invention.

(5) FIG. 5 is a flow chart showing a producing method of a power module of the embodiment of the present invention.

(6) FIG. 6 is a photograph of an ultrasonic image showing a bonding interface between a circuit layer (a first aluminum layer) and a ceramic substrate after thermal cycling test.

(7) FIG. 7 is a binary phase diagram of Cu and Al.

DESCRIPTION OF EMBODIMENTS

(8) Hereinafter, an embodiment of the present invention will be described referring drawings. A heat-sink-attached power module 100 is provided with a heat-sink-attached power-module substrate 20, and a semiconductor element 30 which is bonded to the heat-sink-attached power-module substrate 20. The heat-sink-attached power-module substrate 20 is provided with a power-module substrate 10, and a heat sink 40 which is bonded to the power-module substrate 10.

(9) The power-module substrate 10 has a ceramic substrate 11, a circuit layer 12 which is stacked on one surface 11f of the ceramic substrate 11 and a metal layer 13 which is stacked on another surface 11b of the ceramic substrate 11.

(10) The ceramic substrate 11 prevents electric connection between the circuit layer 12 and the metal layer 13, and formed of AlN, Si.sub.3N.sub.4, Al2O3 or the like. A thickness of the ceramic substrate 11 is in a range of 0.2 mm to 1.5 mm; in this embodiment, 0.635 mm.

(11) The circuit layer 12 has a first aluminum layer 12A which is bonded on the one surface 11f of the ceramic substrate 11 and a first copper layer 12B which is stacked on one side (i.e., an upper side in FIG. 1) of the first aluminum layer 12A.

(12) A first aluminum layer 12A is formed by bonding a plate made of pure aluminum or aluminum alloy on the one surface 11f of the ceramic substrate 11. In the present embodiment, the first aluminum layer 12A is made from a rolled sheet of aluminum having purity of 99.99% or higher (so-called 4N aluminum).

(13) The first copper layer 12B is formed by bonding a plate made of pure copper or copper alloy on the one side (i.e., an upper side in FIG. 1) of the first aluminum layer 12A. In the present embodiment, the first copper layer 12B is formed by bonding a copper plate made of a rolled sheet of oxygen-free copper on the first aluminum layer 12A by solid-phase-diffusion bonding.

(14) The metal layer 13 has a second aluminum layer 13A which is bonded on the other surface 11b of the ceramic substrate 11, and a second copper layer 13B which is stacked on another side (i.e., a lower side in FIG. 1) of the second aluminum layer 13A.

(15) The second aluminum layer 13A is formed by bonding an aluminum plate made of the same material as that of the first aluminum layer 12A in the circuit layer 12 on the other surface 11b of the ceramic substrate 11. In the present embodiment, the second aluminum layer 13A is also formed by bonding the ceramic substrate 11 and an aluminum plate made of a rolled sheet of aluminum having purity of 99.99% or higher (so-called 4N aluminum) that is the same as the first aluminum layer 12A.

(16) The second copper layer 13B is formed by bonding the same material as that of the first copper layer 12B in the circuit layer 12 on another side (i.e., a lower side in FIG. 1) of the second aluminum layer 13A. Accordingly, in the present embodiment, the second copper layer 13B is formed by bonding a copper plate made of a rolled sheet of oxygen-free copper that is the same as the first copper layer 12B on the second aluminum layer 13A by solid-phase-diffusion bonding.

(17) In the power-module substrate 10 structured as above, a thickness t1 of the first copper layer 12B in the circuit layer 12 is 1.7 mm or larger and 5 mm or smaller. A sum of the thickness t1 of the first copper layer 12B and a thickness t2 of the second copper layer 13B is 7 mm or smaller. A ratio t2/t1 between the thickness t1 of the first copper layer 12B and the thickness t2 of the second copper layer 13B is in a range larger than 0 and 1.2 or smaller except for a range of 0.6 or larger and 0.8 or smaller.

(18) In the present embodiment, surface sizes of the circuit layer 12 and the metal layer 13 are smaller than that of the ceramic substrate 11 having a square shape with side length of 30 mm or larger and 50 mm or smaller.

(19) The first aluminum layer 12A and the first copper layer 12B structuring the circuit layer 12 are bonded to each other by solid-phase-diffusion bonding as described above; and at a boundary surface between them, an intermetallic compound layer 14 is formed as shown in FIG. 2. The intermetallic compound layer 14 is formed by mutually diffusing Al atoms of the first aluminum layer 12A and Cu atoms of the first copper layer 12B. The intermetallic compound layer 14 at the boundary surface formed between the first aluminum layer 12A and the first copper layer 12B has a concentration gradient in which concentration of Al atoms is decreased and concentration of Cu atoms is increased from the first aluminum layer 12A toward the first copper layer 12B.

(20) Similarly, the second aluminum layer 13A and the second copper layer 13B structuring the metal layer 13 are bonded by solid-phase-diffusion bonding as described above; and at a boundary surface between them, an intermetallic compound layer 14 is formed as shown in FIG. 2. The intermetallic compound layer 14 is formed by mutually diffusing Al atoms of the second aluminum layer 13A and Cu atoms of the second copper layer 13B. The intermetallic compound layer 14 formed at the boundary surface between the second aluminum layer 13A and the second copper layer 13B has a concentration gradient in which concentration of Al atoms is decreased and concentration of Cu atoms is increased from the second aluminum layer 13A toward the second copper layer 13B.

(21) The intermetallic compound layers 14 which are made up from the intermetallic compound of Cu and Al has a structure in which a plurality of intermetallic compounds are piled along the bonding interfaces. A thickness of the intermetallic compound layers 14 is in a range of 1 m or larger and 80 m or smaller; preferably, in a range of 5 m or larger and 80 m or smaller. The intermetallic compound layers 14 of the present embodiment have a structure in which three kinds of intermetallic compounds are piled as shown in FIG. 2. That is to say, in order from the first aluminum layer 12A (or the second aluminum layer 13A) toward the first copper layer 12B (or the second copper layer 13B), along the bonding interface between the first aluminum layer 12A (or the second aluminum layer 13A) and the first copper layer 12B (or the second copper layer 13B), phase 16 and .sub.2 phase 17 are piled, and a phase 18 including at least one of .sub.2 phase 18A, a phase 18B and a .sub.2 phase 18C are piled (FIG. 7).

(22) Along the bonding interface between the intermetallic compound layer 14 and the first copper layer 12B (or the second copper layer 13B), oxide 19 is dispersed in a stratified state inside at least one of the phase 16, the .sub.2 phase 17, the .sub.2 phase 18A, and the .sub.2 phase. In the present embodiment, the oxide 19 is aluminum oxide such as alumina (Al.sub.2O.sub.3). There is a case in which the oxide 19 is dispersed in a separated state. Moreover, there is a case in which there is an area in which the intermetallic compound layer 14 and the first copper layer 12B (or the second copper layer 13B) are directly in contact to each other.

(23) The heat sink 40 radiates the heat of the power-module substrate 10. The heat sink 40 of the present embodiment includes a heat-radiation plate 41 on which the power-module substrate 10 is bonded, and a cooling part 42 in which a flow path 42a in which coolant (e.g., cooling water) flows is formed. The heat-radiation plate 41 and the cooling part 42 are fixed by screws 43 with grease (not illustrated) therebetween. It is desirable that the heat sink 40 be made of material having excellent thermal conductivity. In this embodiment, the heat-radiation plate 41 is made of oxygen-free copper, and the cooling part 42 is made of aluminum alloy.

(24) The heat-radiation plate 41 of the heat sink 40 and the second copper layer 13B of the metal layer 13 are bonded by a solder layer 45. The solder layer 45 is made of, for example, solder material of SnSb based, SnAg based, SnCu based, SnIn based, SnAgCu based or the like, so-called lead-free solder material.

(25) The semiconductor element 30 is an electronic component having semiconductor; a various semiconductor element is selected in accordance with a necessary function. The semiconductor element 30 is bonded to the first copper layer 12B of the circuit layer 12 with a solder layer 31 therebetween. The solder layer 31 is made of solder material of SnAg based, SnCu based, SnIn based, SnAgCu based or the like for example, so-called lead-free solder material.

(26) Next, a producing method of the power-module substrate 10, the heat-sink-attached power-module substrate 20, and the heat-sink-attached power module 100 structured as above will be explained referring FIG. 3 to FIG. 5.

(27) First, as shown in a part (a) in FIG. 3, on both the surfaces of the ceramic substrate 11 (i.e., the one surface 11f and the other surface 11b in this invention), aluminum plates 12a and 13a are respectively stacked with AlSi based brazing material there between (not illustrated). Then, cooling them after pressurizing/heating them, the aluminum plates 12a and 13a are bonded to the ceramic substrate 11, so that the first aluminum layer 12A and the second aluminum layer 13A are formed on the ceramic substrate 11 as shown in a part (b) in FIG. 3 (aluminum layer forming step S11). Temperature for this brazing is 610 C. to 650 C.

(28) Next, as shown in a part (c) in FIG. 3, a copper plate 12b is arranged on one side (an upper side) of the first aluminum layer 12A, and a copper plate 13b is arranged on another side (a lower side) of the second aluminum layer 13A. Then, inserting this stacked body in a vacuum heating furnace 50 in a state of being pressed in a stacking direction, and a heating process is performed. In this embodiment, solid-phase-diffusion bonding is performed with loads applied on contact surfaces of the first aluminum layer 12A and the copper plate 12b, and contact surfaces of the second aluminum layer 13A and the copper plate 13b are 0.29 MPa or higher and 3.43 MPa or lower, heating temperature is 400 C. or higher and lower than 548 C., and holding time is 5 minutes or longer and 240 minutes or shorter. Thus, as shown in a part (d) in FIG. 3, the first copper layer 12B is formed by bonding the copper plate 12b on the first aluminum layer 12A, and the second copper layer 13B is formed by bonding the copper plate 13b on the second aluminum layer 13A at the same time (copper layer forming step S12). As a result, the circuit layer 12 and the metal layer 13 are formed, the power-module substrate 10 of the present embodiment can be obtained (a part (a) in FIG. 4).

(29) In the present embodiment, bonding surfaces between the first aluminum layer 12A and the copper plate 12b and bonding surfaces between the second aluminum layer 13A and the copper plate 13b are solid-phase-diffusion welded after smoothing by removing scratches in advance. Desirable heating temperature of vacuum heating for solid-phase-diffusion bonding is not lower than temperature which is 5 C. lower than eutectic temperature of Al and Cu and lower than the eutectic temperature.

(30) Next, as shown in parts (b) to (c) in FIG. 4, the heat sink 40 is bonded on another side (a lower side) of the power-module substrate 10 (heat sink bonding step S13). In this heat sink bonding step S13, the heat-radiation plate 41 is soldered on the other side of the power-module substrate 10 by the solder layer 45 as shown in the part (b) in FIG. 4, and then the cooling part 42 is installed to the heat-radiation plate 41 with grease therebetween, so that the heat sink 40 is bonded to the power-module substrate 10. As a result, the heat-sink-attached power-module substrate 20 can be obtained.

(31) Finally, as shown in a part (d) in FIG. 4, by bonding the semiconductor element 30 on one surface (an upper surface in FIG. 4) of the circuit layer 12 of the heat-sink-attached power-module substrate 20 with the solder layer 31 (semiconductor element bonding step S14), the heat-sink-attached power module 100 of the present embodiment can be obtained. FIG. 5 shows a production flow of the heat-sink-attached power module 100.

(32) According to the power-module substrate 10, the heat-sink-attached power-module substrate 20, and the heat-sink-attached power module 100 of the present embodiment having the above-mentioned structure, since the circuit layer 12 is formed from the first aluminum layer 12A which is bonded to the one surface 11f of the ceramic substrate 11 and the first copper layer 12B which is bonded to the first aluminum layer 12A and the semiconductor element 30 is mounted on the first copper layer 12B, the heat from the semiconductor element 30 can be effectively released with spreading in a surface direction at the first copper layer 12B.

(33) Since the first aluminum layer 12A having relatively small deformation resistance is bonded between the ceramic substrate 11 and the first copper layer 12B, thermal stress owing to difference of thermal-expansion coefficients between the ceramic substrate 11 and the circuit layer 12 (the first copper layer 12B) when the thermal cycling is applied is absorbed by the first aluminum layer 12A, so that it is possible to prevent the breakage of the ceramic substrate 11. Moreover, deformation of the circuit layer 12 by a power cycle can be reduced by the first copper layer 12B having relatively large deformation resistance bonded to the first aluminum layer 12A, so that it is possible to prevent cracks of the solder layer 31 connecting the circuit layer 12 and the semiconductor element 30.

(34) Since the first aluminum layer 12A and the first copper layer 12B are bonded to each other by solid-phase-diffusion bonding, it is possible to prevent separation between the first aluminum layer 12A and the first copper layer 12B when the thermal cycling is applied, so that thermal conductivity and electric conductivity of the circuit layer 12 can be well maintained.

(35) Furthermore, the thickness t1 of the first copper layer 12B is 1.7 mm or larger and 5 mm or smaller. If the thickness t1 is smaller than 1.7 mm, the heat of the semiconductor element 30 is difficult to be diffused along the surface direction. Accordingly, the heat resistance by the power cycle cannot be sufficiently reduced, so that it is difficult to maintain reliability against the power cycle. Moreover, if a range of the thickness t1 is larger than 5 mm, there is no difference in heat radiation performance. Therefore, the thickness t1 is 5 mm or smaller in order to reduce size of the whole power module.

(36) The sum of the thickness t1 of the first copper layer 12B and the thickness t2 of the second copper layer 13B is 7 mm or smaller. If the sum of them is larger than 7 mm, thermal stress is generated in the ceramic substrate excessively by the thermal cycling, the ceramic substrate may crack. No particular lowest value of the sum of the thickness t1 of the first copper layer 12B and the thickness t2 of the second copper layer 13B is limited, but it is preferable to be 3.4 mm or larger.

(37) Since the metal layer 13 is formed from the second aluminum layer 13A which is bonded on the other surface 11b of the ceramic substrate 11 and the second copper layer 13B which is bonded on the second aluminum layer 13A, it is possible to bond favorably the metal layer 13 and the heat sink 40 without nickel plating. Since the second copper layer 13B which is bonded to the heat sink 40 with the solder layer 45 has relatively high deformation resistance, the solder layer 45 can be prevented from cracking owing to deformation of the metal layer 13 when the thermal cycling is applied, it is possible to prevent deterioration of the bonding reliability and rise in the thermal resistance. Moreover, since the second aluminum layer 13A having relatively small deformation resistance is bonded to the second copper layer 13B, even if the thermal cycling is applied, the thermal stress can be absorbed by the second aluminum layer 13A between the ceramic substrate 11 and the second copper layer 13B, and it is possible to prevent cracks of the ceramic substrate 11.

(38) Since the second aluminum layer 13A and the second copper layer 13B are bonded to each other by solid-phase-diffusion bonding, it is possible to prevent separation the second aluminum layer 13A and the second copper layer 13B when the thermal cycling is applied, so that the thermal conductivity of the metal layer 13 can be well maintained.

(39) The ratio t2/t1 between the thickness t1 of the first copper layer 12B and the thickness t2 of the second copper layer 13B is in the range of larger than 0 and 1.2 or smaller except for the range of 0.6 or larger and 0.8 or smaller (in other words, a range larger than 0 and smaller than 0.6 or a range larger than 0.8 and 1.2 or smaller).

(40) In the range in which the ratio t2/t1 is 0.6 or larger and 0.8 or smaller, the thickness t1 of the first copper layer 12B and the thickness t2 of the second copper layer 13B are relatively near, so that the bend deformation of the whole power-module substrate 10 is small. However, meanwhile, the rigidity of the second copper layer 13B is high since the thickness thereof is relatively large compared with the first copper layer 12B, accordingly the bend deformations of the first copper layer 12B and the second copper layer 13B are applied on the ceramic substrate 11 with counter direction to each other when the thermal cycling is applied. As a result, even though an amount of the deformation of the whole power-module substrate 10 is small, the force applied on the ceramic substrate 11 is large, so that the ceramic substrate 11 may crack.

(41) If the ration t2/t1 is smaller than 0.6, the thickness t2 of the second copper layer 13B is small compared with the thickness t1 of the first copper layer 12B, and rigidity of the second copper layer 13B is relatively low. Accordingly, bend deformation of the power-module substrate 10 is large owing to difference of the thermal expansions between the first copper layer 12B and the second copper layer 13B while the thermal cycling. However, the second copper layer 13B is deformed along with the first copper layer 12B, so that internal stress of the ceramic substrate 11 can be reduced and the breakage of the ceramic substrate 11 can be prevented.

(42) In the range in which the ratio t2/t1 is larger than 0.8, since the thickness t1 of the first copper layer 12B and the thickness t2 of the second copper layer 13B are almost the same, the bend deformation of the first copper layer 12B and the bend deformation of the second copper layer 13B are balanced when the thermal cycling is applied, it is possible to reduce the bend deformation of the power-module substrate 10 so that cracks of the ceramic substrate 11 can be prevented.

(43) The present invention is not limited to the above-described embodiment and various modifications may be made without departing from the scope of the present invention.

(44) For example, a case in which the heat sink 40 is made of oxygen-free copper was described in the above embodiment. The heat sink 40 can be made of pure copper such as tough-pitch copper or copper alloy. The heat sink can be made of aluminum or aluminum alloy as well. In this case, by Ni plating on the heat sink, the power-module substrate and the heat sink can be favorably bonded by solder. Moreover, the connection between the heat-radiation plate 41 of the heat sink 40 and the cooling part 42 is not limited to fixing of the screws, and they can be bonded by solid-phase-diffusion bonding as well, for instance. The heat sink 40 can be formed without the heat-radiation plate 41, so that it is possible to connect the power-module substrate 10 and the cooling part 42 directly. As the heat sink, various structures for radiating heat such as a heat pipe can be used.

(45) It was described that fixing between the first aluminum layer 12A and the first copper layer 12B and fixing between the second aluminum layer 13A and the second copper layer 13B are simultaneously performed by solid-phase-diffusion bonding, but they may be bonded separately by solid-phase-diffusion bonding.

(46) The first aluminum layer 12A and the second aluminum layer 13A are not limited to pure aluminum of 99.99% purity and may be made of aluminum of purity 99% (so-called 2N aluminum), aluminum alloy or the like.

EXAMPLES

(47) Next, supporting tests conducted for confirming effects of the present invention will be explained.

Invention Examples 1 to 12, Comparative Examples 1 to 4

(48) In the producing steps of the power module, test pieces for Invention Examples 1 to 12 and for Comparative Examples 1 to 4 of the power module were made.

(49) In the examples, power-module substrates in which the circuit layer and the metal layer were stacked on the ceramic substrate having a size of 40 mm40 mm and a thickness of 0.635 mm and made of materials stated in Table 1 were used. The first aluminum layer of the circuit layer and the second aluminum layer of the metal layer were made by bonding aluminum plates stated in Table 1 having a size of 37 mm37 mm and a thickness of 0.6 mm to the ceramic substrate with AlSi based brazing material. The first copper layer of the circuit layer and the second copper layer of the metal layer were made by bonding copper plates stated in Table 1 having a size of 37 mm37 mm respectively to the first aluminum layer and the second aluminum layer by solid-phase-diffusion bonding, so that the power-module substrates as the test pieces for the examples were produced. The solid-phase welding was conducted with pressure of 1.010.sup.6 Pa or higher and 1.010.sup.3 Pa or lower in the vacuum heating furnace.

(50) With respect to the power-module substrates obtained as above, thermal cycling tests were conducted. Then, breakage of the ceramic substrates was evaluated with respect to the power-module substrates after the thermal cycling tests.

(51) The thermal cycling tests were conducted on the power-module substrates using a thermal shock chamber TSB-51 produced by Espec Corp., in liquid baths (fluorine inert fluid (Fluorinert produced by 3M Company)), at 40 C.5 minutes and 125 C.5 minutes for 3000 cycles.

(52) Evaluation of Breakage of Ceramic Substrate

(53) The ceramic substrates were evaluated using an ultrasonic test device as good if breakage was not found or as poor if there was breakage. The evaluation results were shown in Table 1.

(54) TABLE-US-00001 TABLE 1 1st COPPER 2nd COPPER ALUMINUM COPPER CERAMIC LAYER LAYER CERAMIC PLATE PLATE SUBSTRATE THICKNESS THICKNESS RATIO t1 + t2 SUBSTRATE MATERIAL MATERIAL MATERIAL t1 (mm) t2 (mm) t2/t1 (mm) BREAKAGE INVENTION 1 4N OXYGEN-FREE COPPER AlN 1.7 2.0 1.18 3.7 good EXAMPLE 2 4N OXYGEN-FREE COPPER AlN 3.0 0.4 0.13 3.4 good 3 4N OXYGEN-FREE COPPER AlN 3.0 1.6 0.53 4.6 good 4 4N OXYGEN-FREE COPPER AlN 3.0 2.5 0.83 5.5 good 5 4N Zr 20 ppm ADDED COPPER AlN 3.0 3.5 1.17 6.5 good 6 4N Zr 20 ppm ADDED COPPER AlN 5.0 2.0 0.40 7.0 good 7 2N OXYGEN-FREE COPPER AlN 2.0 1.8 0.90 3.8 good 8 2N OXYGEN-FREE COPPER AlN 4.0 2.0 0.50 6.0 good 9 4N TOUGH-PITCH COPPER AlN 2.0 1.8 0.90 3.8 good 10 4N TOUGH-PITCH COPPER AlN 4.0 2.0 0.50 6.0 good 11 4N OXYGEN-FREE COPPER Si.sub.3N.sub.4 2.0 1.8 0.90 3.8 good 12 4N OXYGEN-FREE COPPER Si.sub.3N.sub.4 4.0 2.0 0.50 6.0 good COMPARATIVE 1 4N OXYGEN-FREE COPPER AlN 3.0 1.9 0.63 4.9 poor EXAMPLE 2 4N OXYGEN-FREE COPPER AlN 3.0 2.2 0.73 5.2 poor 3 4N OXYGEN-FREE COPPER AlN 5.0 3.0 0.60 8.0 poor 4 4N OXYGEN-FREE COPPER AlN 2.0 2.7 1.35 4.7 poor

Invention Examples 13 to 16

(55) Heat-sink-attached power-module substrates of Invention Examples 13 to 16 stated in Table 2 were made by bonding the power-module substrates of the above-mentioned Invention Examples 5, 7, 10 and 12 to the heat sinks stated in Table 2 using SnSb solder.

(56) In Invention Example 13, the power-module substrate of Invention Example 5 was used. In Invention Example 14, the power-module substrate of Invention Example 7 was used. In Invention Example 15, the power-module substrate of Invention Example 10 was used. In Invention Example 16, the power-module substrate of Invention Example 12 was used. In Invention Examples 13 and 16, the heat sinks made of Ni-plated Al alloy (A6063) were used. In Invention Examples 14 and 15, the heat sinks made of oxygen-free copper were used.

(57) With respect to the heat-sink-attached power-module substrates obtained as above, bonding rates at a boundary surface between the second copper layer and the solder layer before and after the thermal cycling tests and breakage of ceramic after the thermal cycling tests were evaluated.

(58) Primary bonding rates and after-cycle bonding rates at the boundary surface between the second copper layer and the solder layer before and after the thermal cycling tests were evaluated using the ultrasonic test device. The bonding rates were calculated by a following formula:
Bonding Rate (%)={(Primary Bonding Area)(Separation Area)}/(Primary Bonding Area)

(59) Here, the primary bonding area was an area to be bonded before bonding, namely, an area of the second copper layer in the present examples. A crack of the solder layer was shown by a white part in bonding part in an ultrasonic test image, so the separation area was an area of the white part.

(60) The thermal-shock tests and evaluation of the breakage of the ceramic substrate were conducted similarly to Invention Examples 1 to 12.

(61) TABLE-US-00002 TABLE 2 1st COPPER 2nd COPPER ALUMINUM COPPER CERAMIC LAYER LAYER PLATE PLATE SUBSTRATE HEAT SINK THICKNESS THICKNESS MATERIAL MATERIAL MATERIAL MATERIAL t1 (mm) t2 (mm) INVENTION 13 4N Zr 20 ppm ADDED COPPER AlN Al ALLOY 3.0 3.5 EXAMPLE 14 2N OXYGEN-FREE COPPER AlN OXYGEN-FREE 2.0 1.8 COPPER 15 4N TOUGH-PITCH COPPER AlN OXYGEN-FREE 4.0 2.0 COPPER 16 4N OXYGEN-FREE COPPER Si.sub.3N.sub.4 Al ALLOY 4.0 2.0 PRIMARY AFTER-CYCLE BONDING BONDING CERAMIC t1 + t2 RATE RATE SUBSTRATE RATIO t2/t1 (mm) (%) (%) BREAKAGE INVENTION 13 1.17 6.5 98.6 93.2 good EXAMPLE 14 0.90 3.8 91.3 95.4 good 15 0.50 6.0 98.0 91.8 good 16 0.50 6.0 96.7 94.6 good

(62) As known from Table 1, in Invention Examples 1 to 12 in which the thickness t1 of the first copper layer was 1.7 mm or larger and 5 mm or smaller, the ratio t2/t1 was set to the range larger than 0 and 1.2 or smaller except for the range of 0.6 or larger and 0.8 or smaller, the sum of the thickness t1 of the first copper layer and the thickness t2 of the second copper layer was 7 mm or smaller, it was possible to obtain the power-module substrate in which no breakage was generated in the ceramic substrate after the thermal cycling tests.

(63) Moreover, as known from Table 2, in the heat-sink-attached power-module substrate of Invention Examples in which the heat sink was soldered, it was possible to obtain the heat-sink-attached power-module substrate in which no breakage was generated in the ceramic substrate after the thermal cycling tests and the bonding rate was excellent.

(64) On the other hand, in Comparative Examples 1 and 2 in which the ratio t2/t1 was 0.6 or larger and 0.8 or smaller, Comparative Example 3 in which the sum of the thickness t1 of the first copper layer and the thickness t2 of the second copper layer was larger than 7 mm, and Comparative Example 4 in which the ratio t2/t1 was larger than 1.2, as shown in the ultrasonic image of FIG. 6, breakage was generated in the ceramic substrates after the thermal cycling tests. As known from the ultrasonic image of Table 6, in Comparative Examples 1 to 4, radiate lines were confirmed and cracks were generated in the thickness direction of the ceramic substrate. White areas were dotted in addition to the radiate lines, so that it was known that cracks were generated in a horizontal direction of the ceramic substrate.

INDUSTRIAL APPLICABILITY

(65) To prevent the reduction of the bonding reliability, the rise of the thermal resistance, and the breakage of the ceramic substrate when the thermal cycling was applied regarding the power-module substrate, the heat-sink-attached power-module substrate and the heat-sink-attached power module.

REFERENCE SIGNS LIST

(66) 10 ceramic substrate 11f one surface 11b another surface (the other surface) 12 circuit layer 12a aluminum plate 12A first aluminum layer 12b copper plate 12B first copper layer 13 metal layer 13a aluminum plate 13A second aluminum layer 13b copper plate 13B second copper layer 14 intermetallic compound layer 16 phase 17 .sub.2 phase 18A .sub.2 phase 18B phase 18C .sub.2 phase 19 oxide 20 heat-sink-attached power-module substrate 30 semiconductor element 31 solder layer 40 heat sink 41 heat-radiation plate 42 cooling part 42a flow path 43 screw 45 solder layer 50 vacuum heating furnace 100 heat-sink-attached power module