Power-module substrate unit and power module

Abstract

In a power-module substrate unit, a circuit layer is structured by a plurality of small circuit layers; a ceramic substrate layer is structured by at least one plate; the small circuit layers are formed to have a layered structure having a first aluminum layer bonded on one surface of the ceramic substrate layer and a first copper layer bonded on the first aluminum layer by solid diffusion; a radiation plate is made of copper or copper alloy; the metal layer and the radiation plate are bonded by solid diffusion.

Claims

1. A power-module substrate unit comprising: a ceramic substrate layer; a circuit layer structured from a plurality of small circuit layers joined on one surface of the ceramic substrate layer; a metal layer joined on other surface of the ceramic substrate layer; and one radiation plate joined on the metal layer, wherein each of the small circuit layers has a layered structure comprising a first aluminum layer joined on the one surface of the ceramic substrate layer and a first copper layer joined on the first aluminum layer by solid diffusion bonding; the metal layer is made from a same material as that of the first aluminum layer; the radiation plate is made from copper or copper alloy and joined on the metal layer by solid diffusion bonding; and a ratio (t1A11)/(t2A22) is not smaller than 0.80 and not larger than 1.20: where a thickness of the first copper layer is t1 (mm); a bonding area of the first copper layer is A1 (mm.sup.2); an yield stress of the first copper layer is 1 (N/mm.sup.2); a thickness of the radiation plate at a bonding position to the metal layer is t2 (mm); a bonding area of the radiation plate is A2 (mm.sup.2); and an yield stress of the radiation plate is 2 (N/mm.sup.2).

2. The power-module substrate unit according to claim 1, wherein the ceramic substrate layer is structured by a same number of small ceramic substrates as that of the small circuit layers; the metal layer is structured by a same number of small metal layers as that of the small circuit layers; and a plurality of power-module substrates made by joining the small circuit layers and the small metal layers to each other with the small ceramic substrate therebetween are joined on the radiation plate with spacing.

3. The power-module substrate unit according to claim 1 comprising a power-module substrate joined on the radiation plate with the metal layer made of one plate therebetween, wherein the ceramic substrate layer is structured by a same number of small ceramic substrate as that of the small circuit layers; layered substrates are structured by joining the small circuit layers and the small ceramic substrates; and the power-module substrate is structured by joining the layered substrates with spacing on the metal plate.

4. The power-module substrate unit according to claim 1, comprising a power-module substrate joined on the radiation plate with the metal layer therebetween, wherein the ceramic substrate layer is structured by one plate; the metal layer is structured by a same number of small metal layers as that of the small circuit layers; and the power-module substrate is structured by joining the small circuit layers and the small metal layers with the ceramic substrate layer therebetween with spacing in a surface direction of the ceramic substrate layer.

5. The power-module substrate unit according to claim 1 comprising a power-module substrate joined on the radiation plate with the metal layer structured by one plate therebetween, wherein the ceramic substrate layer is structured by one plate; the small circuit layers are joined on the one surface of the ceramic substrate layer with spacing; and the power-module substrate is structured by joining the metal layer on the other surface of the ceramic substrate layer.

6. The power-module substrate unit according to claim 1, wherein the first aluminum layer and the first copper layer are joined with a titan layer therebetween by solid diffusion bonding.

7. The power-module substrate unit according to claim 1, wherein the metal layer and the radiation plate are joined with a titan layer therebetween by solid diffusion bonding.

8. The power-module substrate unit according to claim 1, wherein the first aluminum layer and the first copper layer, and the metal layer and the radiation plate are respectively joined with titan layers therebetween by solid diffusion bonding.

9. A power module comprising the power-module substrate unit according to claim 1; a semiconductor element and an external-connection lead frame which are connected to at least one of the small circuit layers of the power-module substrate unit; and a molded resin sealing the semiconductor element and the power-module substrate unit except a surface of the radiation plate.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) [FIG. 1] It is a sectional view showing a power module of a first embodiment according to the present invention.

(2) [FIG. 2] It is a sectional view showing a producing process of a power-module substrate unit of the first embodiment according to the present invention.

(3) [FIG. 3] It is a frontal view showing an example of a press device for producing the power-module substrate unit of the first embodiment of the present invention.

(4) [FIG. 4] It is a perspective view of the power-module substrate unit of the first embodiment shown in FIG. 1.

(5) [FIG. 5] It is a sectional view of a power-module substrate unit of a second embodiment explaining a relation of thicknesses between a first copper layer and a radiation plate.

(6) [FIG. 6] It is a sectional view showing a power-module substrate unit of a third embodiment according to the present invention.

(7) [FIG. 7] It is a sectional view showing a power-module substrate unit of a fourth embodiment according to the present invention.

(8) [FIG. 8] It is a sectional view showing a power-module substrate unit of a fifth embodiment according to the present invention.

(9) [FIG. 9] It is a frontal view of a power-module substrate unit of another embodiment according to the present invention.

DESCRIPTION OF EMBODIMENTS

(10) Below, embodiments of the present invention will be explained referring drawings.

(11) A power module 100 of an embodiment shown in FIG. 1 is provided with a power-module substrate unit 51, semiconductor elements 60 joined to the power-module substrate unit 51, and external-connection lead frames 70: the semiconductor elements 60 and the power-module substrate unit 51 are resin-sealed by a molded resin 40 except a surface (an exposed surface 30a) of a radiation plate 30. This power module 100 is fixed in a state in which the exposed surface 30a of the radiation plate 30 is pushed to a surface of a heat sink 80, for example.

(12) As shown in FIG. 1, FIG. 2C and FIG. 4, in the power-module substrate unit 51, a circuit layer 12 is joined on one surface of a ceramic substrate layer 11, and the one radiation plate 30 is joined on another surface of the ceramic substrate layer 11 with a metal layer 13 therebetween. The circuit layer 12 is structured by a plurality of small circuit layers 12S. The ceramic substrate layer 11 is structured by at least one plate. The metal layer 13 is structured by at least one plate.

(13) In the power-module substrate unit 51 of the present embodiment shown in FIG. 1, FIG. 2C and FIG. 4, the ceramic substrate layer 11 is structured by a same number of small ceramic substrates 11S as that of the small circuit layers 12S, and the metal layer 13 is structured from a same number of small metal layers 13S as that of the small circuit layers 12S. Power-module substrates 21 in which the small circuit layers 12S and the small metal layers 13S are joined with the small ceramic substrates 11S therebetween is joined on the one radiation plate 30 with spacing. These power-module substrates 21 are each formed by joining the small circuit layer 12S on the one surface of the small ceramic substrate 11S by brazing, and by joining the small metal layer 13S on the other surface of the small ceramic substrate 11S by brazing.

(14) The small ceramic substrates 11S forming the ceramic substrate layer 11 may be made of, for example, nitride ceramics such as AlN (aluminum nitride), Si.sub.3N.sub.4 (silicon nitride) and the like, or oxide ceramics such as Al.sub.2O.sub.3 (alumina) and the like. Thickness of the small ceramic substrates 11S may be set in a range of 0.2 to 1.5 mm.

(15) The small circuit layers 12S forming the circuit layer 12 has a layered structure including a first aluminum layer 15 joined on the surface of the ceramic substrate layer 11 (the small ceramic substrate 11S) and a first copper layer 16 joined on the first aluminum layer 15.

(16) The first aluminum layers 15 each are made by joining a plate material of pure aluminum or aluminum alloy to the ceramic substrate layer 11 (the small ceramic substrate 11S). In the present embodiment, the first aluminum layers 15 each are made by brazing an aluminum plate having purity of 99.99 mass % or higher, 1N99 in the JIS standard (purity of 99.99 mass % or higher: the so-called 4N aluminum) on the small ceramic substrate 11S. The first copper layers 16 each are made by joining a plate material of pure copper or copper alloy on the first aluminum layer 15. In the present embodiment, the first copper layer 16 is made by joining a copper plate of oxygen-free copper on the first aluminum layer 15 by solid-diffusion. Thickness of the first aluminum layer 15 is not smaller than 0.1 mm and not larger than 3.0 mm. Thickness of the first copper layer 16 is not smaller than 0.5 mm and not larger than 5.0 mm.

(17) The small metal layers 13S forming the metal layer 13 are made of a same material as that of the first aluminum layer 15 of the circuit layer 12 (the small circuit layers 12S). In the present embodiment, the small metal layers 13S each are made by brazing an aluminum plate formed to have thickness of not smaller than 0.1 mm and not larger than 3.0 mm and purity of 99.99 mass % or higher which is the same as the first aluminum layer 15 on the small ceramic substrate 11S. The small circuit layers 12S and the small metal layers 13S are formed to have substantially a same size of flat plate shape.

(18) The radiation plate 30 is made of a plate material of pure copper or copper alloy: the small metal layers 13S of the power-module substrate 21 are joined on the radiation plate 30 respectively by solid diffusion. In the present embodiment, the radiation plate 30 is made of zirconium-addition heat-resistance copper alloy (ZC alloy manufactured by Mitsubishi Shindoh Co., Ltd.: Cu 99.98 wt %-Zr 0.02 wt %) into a flat plate with thickness 1.5 mm: as shown in FIG. 1 and FIG. 2, the radiation plate 30 is larger than the circuit layer 12 structured by the small circuit layers 12S and the metal layer 13 structured by the small metal layers 13, to have a flat plate shape larger than a bonding surface between the circuit layer 12 and the ceramic substrate layer 11.

(19) In the radiation plate 30 and each of the first copper layers 16 of the respective small circuit layers 12S, a ratio (t1A11)/(t2A22) is set to be not smaller than 0.80 and not larger than 1.20 where a thickness of the first copper layer 16 is t1 (mm), a bonding area of the first copper layer 16 to the first aluminum layer 15 is A1 (mm.sup.2), an yield stress of the first copper layer 16 is 1 (N/mm.sup.2), a thickness of the radiation plate 30 at a bonding position to the metal layer 13 (the small metal layers 13S ) is t2 (mm), a bonding area of the metal layer 13 to the radiation plate 30 is A2 (mm.sup.2), and an yield stress of the radiation plate 30 is 2 (N/mm.sup.2).

(20) For example, in a case in which the first copper layer 16 is C1020 with thickness t1=2.0 mm (the yield stress 1=195 N/mm.sup.2), the bonding area A1 between the first copper layer 16 and the first aluminum layer 15 is 800 mm.sup.2, the radiation plate 30 is heat residence alloy ZC manufactured by Mitsubishi Shindoh Co., Ltd. with thickness t2=1.4 mm (the yield stress 2=280 N/mm.sup.2), and the bonding area A2 between the metal layer 13 and the radiation plate 30 is 900 mm.sup.2, the ratio (t1A11)/(t2A22)=0.88. The yield stresses in the present invention are values at room temperature (25 C.). The bonding area A1 is a sum total of respective bonding areas between the first copper layers 16 and the first aluminum layers 15 in the power-module substrates 21. Similarly, the bonding area A2 is a sum total of respective bonding areas between the small metal layers 13S of the power-module substrates 21 and the radiation plate 30.

(21) On surfaces of the small circuit layers 12S of the respective power-module substrates 21 configuring the power-module substrate unit 51, the semiconductor elements 60 are soldered. On these semiconductor elements 60 and the small circuit layers 12S, the external-connection lead frames 70 are connected. The semiconductor elements 60 and the power-module substrate unit 51 are integrally resin-sealed by the molded resin 40, except the surface (the exposed surface 30a) of the radiation plate 30. The external-connection lead frames 70 are provided so that a part sticks out from the molded resin 40.

(22) The semiconductor elements 60 are electronic parts including semiconductor: IGBT (Insulated Gate Bipolar Transistor), MOSFET (Metal Oxide Semiconductor Field Effect Transistor), FWD (Free Wheeling Diode) and the like are variously selected as required functions. Soldering material bonding the semiconductor elements 60 is, for example, SnSb based solders, SnAg based solders, SnCu based solders, SnIn based solders, or SnAgCu based solders (so-called lead-free solder).

(23) The external-connection lead frames 70 are, for example, made of copper or copper alloy, and connected by ultrasonic bonding, soldering, or the like.

(24) The molded resin 40 is, for example, formed by transfer mold using epoxy resin including filler of SiO.sub.2 or the like, for example.

(25) The power module 100 structured as above is used in a state of being fixed on the heat sink 80 as shown in FIG. 1. The heat sink 80 in the present embodiment is for radiation of heat of the power module 100, includes a top plate 81 on which the radiation plate 30 of the power module 100 is fixed, and a cooling part 82 having a pass 83 for flowing cooling medium (e.g., cooling water). The power module 100 and the heat sink 80 are fixed by being pressed by a spring or the like, with grease (not illustrated) between the radiation plate 30 of the power module 100 and the top plate 82 of the heat sink 80.

(26) It is desirable that the heat sink 80 is made of material having good thermal conductivity: it is made of aluminum alloy (A6063 alloy) in this embodiment. As the heat sink 80 on which the power module 100 is fixed, a flat plate, one in which a multiple-pin fin is formed integrally by hot forging or the like, one in which belt fins parallel to each other are integrally formed by extrusion molding and the like, suitable shapes can be used. As for a heat sink made of aluminum or copper, the power module can be fixed by soldering.

(27) Next, an example of a producing method of power-module substrate unit 51 and the power module 100 structured as above will be explained.

(28) First, as shown in FIG. 2A, a first-layer aluminum plate 15a to be the first aluminum layer 15 of the small circuit layer 12S is stacked on one surface of the small ceramic substrate 11S, and a metal-layer aluminum plate 13a to be the small metal layer 13S is stacked on another surface, and then these are joined together. For joining these, brazing material of AlSi based alloy or the like is used. For example, a stacked body S in which the small ceramic substrate 11S, the first-layer aluminum plate 15a, and the metal-layer aluminum plate 13a are stacked with a brazing foil 18 of above-mentioned alloy therebetween is pressed in a stacking direction using a press device 110 shown in FIG. 3.

(29) The press device 110 shown in FIG. 3 is provided with a base plate 111, guide posts 112 vertically fixed at four corners on an upper surface of the base plate 111, a fixing plate 113 fixed on top ends of the respective guide posts 112, a pressing plate 114 held by the guide posts 112 so as to move vertically between the base plate 111 and the fixing plate 113, and a biasing device 115 such as a spring or the like provided between the fixing plate 113 and the pressing plate 114 biasing the pressing plate 114 downward.

(30) The fixing plate 113 and the pressing plate 114 are arranged to be parallel with the base plate 111. The aforementioned stacked bodies S are arranged between the base plate 111 and the pressing plate 114. On both surfaces of the stacked bodies S, carbon sheets 116 are arranged in order to make pressing force even.

(31) The stacked bodies S being pressed by the press device 110 are placed in a heating furnace (not illustrated) together with the press device 110, and brazed by heating to brazing temperature under vacuum atmosphere. In this case, the pressing force is set to 0.68 MPa (7 kgf/cm.sup.2), and the heating temperature is set to 640 C., for example.

(32) As shown in FIG. 2B, a first-layer copper plate 16a to be the first copper layer 16 and the radiation plate 30 are bonded to respective bonded bodies 19 in which the small ceramic substrate 11S, the first aluminum layer 15 and the small metal layer 13S are bonded. A stacked body in which the first-layer copper plate 16a is stacked on the first aluminum layer 15 of the bonded body 19 and the radiation plate 30 is stacked on the small metal layer 13S is heated together with the press device 110 under the vacuum atmosphere in a pressed state in a stacking direction using the press device 110 as FIG. 3, so that the small circuit layer 12S is made by bonding the first aluminum layer 15 and the first copper layer 16 by solid diffusion, and the small metal layer 13S and the radiation plate 30 are bonded by solid diffusion. In this case, the pressing force is not lower than 0.29 MPa and not higher than 3.43 MPa, and the heating temperature is not lower than 400 C. and lower than 548 C., for example. By maintaining this pressing and heating state for not shorter than 5 minutes and not longer than 240 minutes, the first aluminum layer 15 with the first copper layer 16, and the small metal layer 13S with the radiation plates 30 are bonded by solid diffusion at the same time, the power-module substrate unit 51 can be obtained (FIG. 2C and FIG. 4).

(33) In this embodiment, the bonded surfaces of the first aluminum layer 15 and the first copper layer 16, and the bonded surfaces of the small metal layer 13S and the radiation plate 30 are smoothed by removing scratches in advance of the solid diffusion bonding. Favorable heating temperature of vacuum heating in the solid diffusion bonding is a range not lower than eutectic temperature of aluminum and copper 5 C. and lower than the eutectic temperature.

(34) The solid diffusion bonding of the first aluminum layer 15 with the first copper layer 16 and the small metal layer 13S with the radiation plate 30 is not limited to a simultaneous operation. The respective steps can be performed without limiting to the above embodiment: for example, the first aluminum layer 15 and the first copper layer 16 may be bonded in advance so as to make the power-module substrate 21, then the small metal layer 13S and the radiation plate 30 may be bonded.

(35) To the small circuit layer 12S of the power-module substrate unit 51 manufactured as above, the semiconductor elements 60 are soldered (by die bonding). Then, after bonding the external-connection lead frames 70 to the semiconductor elements 60 and the small circuit layers 12S by methods such as ultrasonic bonding, soldering or the like, the molded resin 40 is formed by transfer molding so that the semiconductor elements 60 and the power-module substrate unit 51 are resin-sealed except the exposed surface 30a of the radiation plate 30.

(36) In the power-module substrate unit 51 produced as above, since the ratio (t1A11)/(t2A22) is set to the range not smaller than 0.80 and not larger than 1.20 where the thickness of the first copper layer 16 is t1 (mm), the bonding area between the first aluminum layer 15 and the first copper layer 16 is A1 (mm.sup.2), the yield stress of the first copper layer 16 is 1 (N/mm.sup.2), the thickness of the radiation plate 30 at the bonding position to the metal layer 13, i.e., at the bonding positions to the respective small metal layer 13S is t2 (mm), the boning area between the metal layer 13 and the radiation plate 30 is A2 (mm.sup.2), the yield stress of the radiation plate 30 is 2 (N/mm.sup.2): therefore the symmetry structure centering the ceramic substrate layer 11 is made. That is to say, in cases in which the ratio (t1A11)/(t2A22) is 1.00, not smaller than 0.80 and smaller than 1.00, and larger than 1.00 and not larger than 1.20, the symmetrical structure centering the ceramic substrate layer 11 can be suitably structured.

(37) As in the present embodiment, by considering the aforementioned ratio in the bonding part of the circuit layer 12 and the bonding part of the radiation plate 30 in which the metal layer 13 is bonded, the symmetric property centering the ceramic substrate layer 11 can be improved. As a result, the internal stresses on both the surfaces of the ceramic substrate layer 11 by heating or the like are not much biased, so that it is possible to prevent the warp deformation. Accordingly, it is possible to prevent the warp deformation also in the mounting process of the semiconductor elements 60 or in the usage environment, not only the primary warp deformation when layering respective layers: therefore it is possible to improve reliability as the insulating substrate and show the excellent radiation property. Moreover, it is possible to accurately position the plurality of power-module substrates 21 (the small circuit layers 12S) and advance high integration by joining the plurality of the power-module substrates 21 (the small circuit layers 12S) on one radiation plate.

(38) Moreover, by using the power-module substrate unit 51 in which the plurality of power-module substrates 21 are joined on one radiation plate 30, an integrated power module can be easily manufactured as the power module 100 of the present embodiment. Since the power-module substrate unit 51 is united by one radiation plate 30, the position shift, the deformation and the like are hardly occurred even if the resin pressure is applied. Accordingly, the position accuracy can be easily obtained and high-integration can be realized.

(39) In the above embodiment, the power-module substrate unit 51 is structured using the flat plate-shape radiation plate 30 though, it is possible to use a radiation plate having a flat plate with fin in which deformation by fluctuation of temperature is small, such as pin fin, or a radiation plate having uneven thickness, or the like. In this case, when a thickness of a flat plate on which a metal layer is bonded is a thickness t2 of a radiation plate, forming a relation between the radiation plate and a first copper layer, i.e., a ratio (t1A11)/(t2A22) is not smaller than 0.80 and not larger than 1.20, the symmetrical structure centering the ceramic substrate layer 11 can be structured even in a power-module substrate unit using the radiation plate having a complicated shape.

(40) For example, in a power-module substrate unit 52 of a second embodiment shown in FIG. 5, a radiation plate 32 is not an even flat plate, but has parts with various thicknesses: even in this case, the symmetric structure centering the ceramic substrate layer 11 can be structured by setting the relation between the first copper layers 16 and the radiation plate 32 at the bonding positions of the first aluminum layers 15 with the first copper layers 16 and the bonding position of the metal layer 13 with the radiation plate 32 into the ratio (t1A11)/(t2A22) not smaller than 0.80 and not larger than 1.20.

(41) In this case, A1 (mm.sup.2) is a bonding area between the first aluminum layer 15 and the first copper layer 16, and A2 (mm.sup.2) is a bonding area between the metal layer 13 and the radiation plate 32. In the power-module substrate unit 52, in the respective cases of the ratio (t1A11)/(t2A22) is 1.0, not smaller than 0.80 and smaller than 1.00, or larger than 1.00 and not larger than 1.20, the symmetric structure centering the ceramic substrate layer 11 is favorably structured like the first embodiment. Accordingly, the internal stresses on both the surface of the ceramic substrate layer 11 by heating or the like are not much biased, so that it is possible to prevent the warp deformation and show the excellent radiation property.

(42) The bonding area A1 is a sum total of respective bonding areas between the first copper layers 16 and the first aluminum layers 15 of the power-module substrates 21. Similarly, the bonding area A2 is a sum total of respective bonding areas between the small metal layers 13S of the power-module substrates 21 and the radiation plate 30.

(43) FIG. 6 shows a power-module substrate unit 53 of a third embodiment. In this power-module substrate unit 53, the ceramic substrate layer 11 is structured by a same number of the small ceramic substrates 11S as that of the small circuit layers 12S, and the metal layer 13 is made of one plate. Layered substrates 14 in which the small circuit layers 12S and the small ceramic substrates 11S are bonded respectively are bonded with spacing on the metal layer 13, so that power-module substrate 23 is formed. By joining the metal layers 13 of the power-module substrates 23 on the radiation plate 30, the power-module substrate unit 53 is formed.

(44) Also in this case, the symmetric structure centering the ceramic substrate layer 11 can be structured by setting the relation between the first copper layers 16 and the radiation plate 30 at the bonding positions of the first aluminum layers 15 with the first copper layers 16 and the bonding position of the metal layer 13 with the radiation plate 30 into the ratio (t1A11)/(t2A22) not smaller than 0.80 and not larger than 1.20. In this case, the bonding area between the first aluminum layer 15 and the first copper layer 16 is A1 (mm.sup.2), and the bonding area between the metal layer 13 and the radiation plate 30 is A2 (mm.sup.2).

(45) Also in a case in which the bonding area A1 and the bonding area A2 are different as in the power-module substrate unit 53 of the present embodiment, the symmetric structure centering the ceramic substrate layer 11 can be favorably structured similarly to the first embodiment, by setting the relation between the first copper layers 16 and the radiation plate 30 at these bonding positions into the ratio (t1A11)/(t2A22) not smaller than 0.80 and not larger than 1.20. In other words, in the power-module substrate unit 53, in cases in which the ratio (t1A11)/(t2A22) is 1.00, not smaller than 0.80 and smaller than 1.00, or larger than 1.00 and not larger than 1.20, the symmetric structure centering the ceramic substrate layer 11 is structured favorably as in the first embodiment. The bonding area A1 is a sum total of respective bonding areas between the first copper layers 16 to the firs aluminum layers 15 in the layered substrates 14.

(46) FIG. 7 shows a power-module substrate unit 54 of a fourth embodiment. In the power-module substrate unit 54, the ceramic substrate layer 11 is made of one plate, and the metal layer 13 is structured by a same number of the small metal layers 13S as that of the small circuit layers 12S. The small circuit layers 12S and the small metal layers 13S are bonded on the ceramic substrate layer 11 therebetween with spacing in a surface direction of the ceramic substrate layer 11, so that a power-module substrate 24 is formed. The power-module substrate unit 54 is formed by bonding the metal layer 13 (the small metal layers 13S) of the power-module substrate 24 on the radiation plate 30.

(47) As described above, also in a case in which the ceramic substrate layer 11 is made of one plate, the symmetric structure centering the ceramic substrate layer 11 can be structured by setting the relation between the first copper layers 16 and the radiation plate 30 at the bonding positions between the first aluminum layers 15 and the first copper layers 16 and the bonding positions between the small metal layers 13S and the radiation plate 30 into the ratio (t1A11)/(t2A22) not smaller than 0.8 and not larger than 1.20. In this case, A1 (mm.sup.2) is the bonding area between the first aluminum layer 15 and the first copper layer 16, and A2 (mm.sup.2) is the bonding area between the metal layer 13 and the radiation plate 30.

(48) As described above, in the power-module substrate unit 54, in cases in which the ratio (t1A11)/(t2A22) is 1.00, not smaller than 0.80 and smaller than 1.00, or larger than 1.00 and not larger than 1.20, the symmetric structure centering the ceramic substrate layer 11 can be favorably formed as in the first embodiment. Moreover, as in the power-module substrate unit 54 of the fourth embodiment, by forming the ceramic substrate layer 11 having small linear-expansion coefficient and high rigidity from one plate, the internal stresses on both the surfaces of the ceramic substrate layer 11 by heating or the like are not much biased, so that it is possible to prevent the warp deformation more efficiently. The bonding area A1 is a sum total of bonding areas of the first copper layers 16 to the first aluminum layers 15 in the power-module substrate 24. Similarly, the bonding area A2 is a sum total of bonding areas of the small metal layers 13S of the power-module substrate 24 to the radiation plate 30.

(49) FIG. 8 shows a power-module substrate unit 55 of a fifth embodiment. In this power-module substrate unit 55, the ceramic substrate layer 11 is made of one plate, and the metal layer 13 is also made of one plate. The small circuit layers 12S are bonded on one surface of the ceramic substrate layer 11 with spacing, and the metal layer 13 is bonded on the other surface of the ceramic substrate layer 11, so that a power-module substrate 25 is formed. The power-module substrate unit 55 is formed by bonding the metal layer 13 of the power-module substrate 25 on the radiation plate 30.

(50) As described above, even in a case in which the ceramic substrate layer 11 is made of one plate and the metal layer 13 is made of one plate, the symmetric structure centering the ceramic substrate layer 11 can be structured by setting the relation between the first copper layers 16 and the radiation plate 30 into the ratio (t1A11)/(t2A22) not smaller than 0.8 and not larger than 1.20 at the bonding positions of the first aluminum layers 15 with the first copper layers 16 and the bonding position of the metal layer 13 with the radiation plate 30. In this case, A1 (mm.sup.2) is the bonding area of the first aluminum layers 15 with the first copper layers 16, and A2 (mm.sup.2) is the bonding area of the metal layer 13 with the radiation plate 30.

(51) As described above, in the power-module substrate unit 55, in cases in which the ratio (t1A11)/(t2A22) is 1.00, not smaller than 0.8 and smaller than 1.00, or larger than 1.00 and not larger than 1.20, the symmetric structure centering the ceramic substrate layer 11 is favorably structured as in the first embodiment. Also in this case, by forming the ceramic substrate layer 11 having small linear-expansion coefficient and high rigidity from one plate, the internal stresses on both the surfaces of the ceramic substrate layer 11 by heating or the like are not much biased, so that it is possible to prevent the warp deformation more efficiently. The bonding area A1 (mm.sup.2) is a sum total of bonding areas of the first copper layers 16 with the first aluminum layers 15 in the respective small circuit layers 12S.

(52) In the aforementioned respective embodiments, power modules having so-called 2-in-1 structure in which two circuits (the small circuit layers 12S) are mounted on the radiation plate 30 were explained: while it is easy to develop to a 3-in-1 structure on which three circuits are mounted, or a 6-in-1 structure in which six circuits (the small circuit layers 12S) are mounted on the radiation plate 30 as is the case in a power-module substrate unit 56 shown in FIG. 9 by using the structure of the power-module substrate unit and the power module of the present invention. FIG. 9 shows the small circuit layers 12S and the radiation plate 30 but omits the ceramic substrate layer 11 and the metal layer 13 from illustration.

(53) Furthermore, it is possible to gain a structure in which both sides are cooled by a structure in which the power-module substrate units having the radiation plates are arranged on both sides of the semiconductor element respectively.

(54) In the above embodiments, the first aluminum layers 15 and the first copper layers 16 are bonded directly by solid diffusion, and the metal layer 13 and the radiation plates 30 or 32 are bonded directly by solid diffusion.

(55) However, the present invention is not limited to a case of direct solid diffusion, and the following structure can be applied.

(56) In the structure of the above embodiments, the first aluminum layers 15 and the first copper layers 16, and the metal layer 13 and one of or both the radiation plates 30 and 32 may be bonded by solid diffusion with a titan layer therebetween. In this case, intermetallic compound of Al and Cu can be prevented from growing when temperature of the power-module substrate unit rises: it is possible to improve the bonding reliability and life.

(57) A thickness of the titan layer may be not smaller than 5 m and not larger than 50 m. If the thickness of the titan layer is smaller than 5 m, the titan layer is easy to break when bonding by solid diffusion, so that the effect of decreasing the growth of the intermetallic compound of Al and Cu is deteriorated. If the thickness of the titan layer is larger than 50 m, since the thick titan layer has low thermal conductivity, thermal resistance of the power-module substrate unit is increased remarkably.

(58) Influence of the titan layer on the warp deformation can be ignored.

(59) As a producing method of the power-module substrate unit including the titan layer, the solid diffusion bonding may be performed arranging a titan foil between the first aluminum layers 15 and the first-layer copper plates 16a, or between the metal layer 13 and the radiation plates 30 and 32 when producing by the producing method described in the above embodiments. It is preferable that a thickness of the titan foil be not smaller than 5 m and not larger than 50 m.

EXAMPLES

(60) Next, Examples for confirming effects of the present invention will be explained.

(61) As test pieces of the power-module substrate unit, prepared were a ceramic substrate made of AlN having a thickness of 0.635 mm as the ceramic substrate layer, and an aluminum plate having a thickness of 0.6 mm and purity 99.99 mass % or higher (4N) as the first aluminum layer and the metal layer (the first-layer aluminum plate and the metal layer aluminum layer) was prepared. Plate materials having thicknesses shown in Table 1 were prepared as the first copper layer and the radiation plate (the first-layer copper plate and the radiation plate) by C1020 (yield stress=195 N/mm.sup.2) or heat residence alloy ZC manufactured by Mitsubishi Shindoh Co., Ltd. (yield stress=280 N/mm.sup.2). Values of the yield stresses were at room temperature (25 C.). The respective members were made to have plate sizes shown in Table 1.

(62) The test pieces of the power-module substrate unit were made by bonding these by the bonding methods in the aforementioned embodiments. Embodiment in Table 1 means the producing method of the embodiment by which the respective test pieces were made. As a conventional example, a power-module substrate unit (Conventional Example 1 in Table 1) was manufactured by the bonding method described in the first embodiment but the first copper layers of the circuit layer were not bonded and the first copper layers were not formed (i.e., the circuit layer was formed only by the first aluminum layers).

(63) In the Table 1, the Number of Circuits denotes the number of small circuit layers forming the circuit layer. The Number of Assemblies of the ceramic substrate layer denotes the number of the small ceramic substrates when the ceramic substrate layer is structured by the plurality of small ceramic substrates. The Number of Assemblies of the metal layer denotes the number of the small metal layers when the metal layer is structured by the plurality of small metal layers. Accordingly, for example, when the ceramic substrate layer is made from one plate, the Number of Assemblies is denoted as 1. The Plane Size in the circuit layer, the ceramic substrate layer and the metal layer denotes the respective sizes of the circuit layer, the ceramic substrate layer and the metal layer, and these were made as shown in Table 1. The radiation plates each had a flat plate shape and the whole plane size thereof was 100 mm100 mm. The Ratio in Table 1 denotes the ratio (t1A11)/(t2A22).

(64) With respect to the respective obtained test pieces, the warp amount (the primary warp deformation) at normal temperature (25 C.) after bonding and the warp amount when heated to 285 C. (the heated warp) simulating the mounting process were measured respectively. The warp amounts were evaluated by measuring changes of flatness at a back surface of the radiation plate using a moire-type three-dimensional shape measuring device. The warp amounts were positive values (+) when it was convex at the circuit layer side, or negative values () when it was dented at the circuit layer side.

(65) Yield rates in the mounting process of the semiconductor elements were evaluated. The semiconductor elements were mounted on the respective first copper layers of the 100 test pieces. If the semiconductor element was shifted 100 m or larger in a horizontal direction from the mounted position, it was evaluated to be not good. If two or less were not good, it was evaluated to be A as the most favorable case: if not less than three and less than 10 were not good, it was evaluated to be B as a favorable case: and if not less than 10 were not good, it was evaluated to be C as a poor case. The results were shown in Table 1.

(66) TABLE-US-00001 TABLE 1 Circuit Layer First Copper Layer Number of Ceramic Substrate Metal Layer Thickness Yield Stress Plane Size Circuits Plane Size Plane Size t 1 1 per one (Number of per one Number of per one Number of TEST PIECE (mm) (N/mm.sup.2) (mm mm) Assemblies) (mm mm) Assemblies (mm mm) Assemblies Invention Ex. 1 2.00 195 37 37 1 40 40 1 37 37 1 Ex. 2 2.00 195 37 37 4 40 40 4 37 37 4 Ex. 3 3.00 195 37 37 4 40 40 4 37 37 4 Ex. 4 2.00 195 37 37 4 40 40 4 37 37 4 Ex. 5 2.00 195 37 37 4 40 40 4 37 37 4 Ex. 6 3.00 195 35 35 4 40 40 4 37 37 4 Ex. 7 3.00 195 35 35 4 40 40 4 37 37 4 Ex. 8 2.00 195 37 37 4 40 40 4 79 79 1 Ex. 9 2.00 195 37 37 4 40 40 4 79 79 1 Ex. 10 2.00 195 37 37 4 82 82 1 37 37 4 Ex. 11 2.00 195 37 37 4 82 82 1 37 37 4 Ex. 12 2.00 195 37 37 4 82 82 1 37 37 4 Ex. 13 2.00 195 37 37 4 82 82 1 79 79 1 Ex. 14 2.00 195 37 37 4 82 82 1 79 79 1 Comparative Ex. 1 1.40 195 37 37 4 40 40 4 37 37 4 Ex. 2 3.00 280 37 37 4 40 40 4 37 37 4 Ex. 3 1.50 195 37 37 4 40 40 4 79 79 1 Ex. 4 1.20 195 37 37 4 82 82 1 37 37 4 Ex. 5 1.50 195 37 37 4 82 82 1 79 79 1 Ex. 6 3.00 195 37 37 4 82 82 1 79 79 1 Conventional Ex. 1 37 37 4 40 40 4 37 37 4 Radiation Plate Thickness Yield Stress t2 2 Warp Amount (m) TEST PIECE (mm) (N/mm.sup.2) Ratio Initial Heated Difference Yield Rate Embodiment Invention Ex. 1 1.40 280 0.99 45 93 48 A 1st Embodiment Ex. 2 1.40 280 0.99 51 101 50 A 1st Embodiment Ex. 3 3.00 195 1.00 60 98 38 A 1st Embodiment Ex. 4 1.25 280 1.11 101 212 111 A 1st Embodiment Ex. 5 1.70 280 0.82 95 40 135 B 1st Embodiment Ex. 6 3.00 195 0.89 51 76 127 B 1st Embodiment Ex. 7 2.40 195 1.12 55 86 31 A 1st Embodiment Ex. 8 2.00 195 0.88 74 124 50 A 3rd Embodiment Ex. 9 1.60 195 1.10 112 167 55 A 3rd Embodiment Ex. 10 2.00 195 1.00 69 116 47 A 4th Embodiment Ex. 11 2.30 195 0.87 58 70 128 B 4th Embodiment Ex. 12 1.70 195 1.18 84 125 41 A 4th Embodiment Ex. 13 2.00 195 0.88 54 102 48 A 5th Embodiment Ex. 14 1.60 195 1.10 96 142 46 A 5th Embodiment Comparative Ex. 1 1.40 280 0.70 108 112 220 C 1st Embodiment Ex. 2 2.00 280 1.50 259 526 267 C 1st Embodiment Ex. 3 2.00 195 0.66 145 250 395 C 3rd Embodiment Ex. 4 2.00 195 0.60 122 226 348 C 4th Embodiment Ex. 5 2.00 195 0.66 126 210 336 C 5th Embodiment Ex. 6 2.00 195 1.32 155 387 232 C 5th Embodiment Conventional Ex. 1 3.00 280 417 629 1046 C

(67) As recognized from Table 1, in Conventional Example 1 in which the first copper layer was not provided, the warp amounts at room temperature and when heated were large, a number of inferiors were occurred when the semiconductor elements were mounted. Meanwhile, in Invention Examples 1 to 14 in which the first copper layer was provided and the ratio (t1A11)/(t2A22) was not smaller than 0.80 and not larger than 1.20, it was recognized that the power-module substrate unit in which the warp amount at room temperature and the warp amount when heated were small can be obtained. It was also recognized that the semiconductor elements can be mounted with high yield rate by using such a power-module substrate unit.

(68) Especially, in Invention Examples 1 to 4, 7 to 10, and 12 to 14 in which the warp amount at normal temperature was 120 m or smaller and difference of the warp amounts between at normal temperature and when heated was smaller than 120 m, it was recognized that the power-module substrate unit in which the semiconductor elements can be mounted with higher yield rate can be obtained.

(69) Meanwhile, in Comparative Examples 1 to 6 in which the ratio (t1A11)/(t2A22) was smaller than 0.80 or larger than 1.20, although having the first copper layer, it was recognized that the warp amount at normal temperature and the warp amount when heated of the power-module substrate unit were large, so that the yield rate of the semiconductor elements in the mounting process was low.

(70) The present invention is not limited to the above-mentioned embodiments and various modifications may be made without departing from the scope of the present invention.

INDUSTRIAL APPLICABILITY

(71) It is possible to provide a power-module substrate unit and a power module in which deformation by fluctuation of temperature is small, radiation performance is good, and circuits can be integrated.

REFERENCE SIGNS LIST

(72) 11 ceramic substrate layer 11S small ceramic substrate 12 circuit layer 12S small circuit layer 13 metal layer 13a metal-layer aluminum plate 13S small metal layer 14 layered substrate 15 first aluminum layer 15a first-layer aluminum plate 16 first copper layer 16a first-layer copper plate 18 brazing foil 19 bonded body 21 to 25 power-module substrate 30, 32 radiation plate 30a exposed surface 40 molded resin 51, 52, 53, 54, 55, 56 power-module substrate unit 60 semiconductor element 70 external-connection lead frame 80 heat sink 81 top plate 82 cooling part 83 pass 100 power module 110 press device 111 base plate 112 guide post 113 fixing plate 114 pressing plate 115 biasing device 116 carbon sheet