Patent classifications
C08F220/16
Resin, resist composition and method for producing resist pattern
Disclosed are a resin containing a structural unit represented by formula (I), a structural unit represented by formula (a1-1), a structural unit represented by formula (a1-2) and a structural unit represented by formula (a2-A), and a resist composition including the same: ##STR00001##
Resist composition and method for producing resist pattern
Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator: ##STR00001##
wherein, in formula (I), R.sup.1 represents a halogen atom or an alkyl fluoride group having 1 to 6 carbon atoms, m1 represents an integer of 1 to 5, and when m1 is 2 or more, a plurality of R.sup.1 may be the same or different from each other.
Resist composition and method for producing resist pattern
Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator: ##STR00001##
wherein, in formula (I), R.sup.1 represents a halogen atom or an alkyl fluoride group having 1 to 6 carbon atoms, m1 represents an integer of 1 to 5, and when m1 is 2 or more, a plurality of R.sup.1 may be the same or different from each other.
Polymer, chemically amplified positive resist composition and patterning process
A positive resist composition comprising a polymer comprising recurring units having both an acyl or alkoxycarbonyl group and an acid labile group-substituted hydroxyl group exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness.
Polymer, chemically amplified positive resist composition and patterning process
A positive resist composition comprising a polymer comprising recurring units having both an acyl or alkoxycarbonyl group and an acid labile group-substituted hydroxyl group exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness.
Highly functional graft copolymer and method for preparing the same
This invention relates to a highly functional graft copolymer and a method of preparing the same, and more particularly, to a highly functional graft copolymer including a main chain of a highly elastic ethylene-based terpolymer including, at a predetermined molar ratio, an ethylene unit, an α-olefin unit having 6 to 12 carbon atoms, and at least one functional unit selected from the group consisting of divinylbenzene and p-methylstyrene, and a side chain of a polar polymer for imparting functionality, and to a method of preparing the highly functional graft copolymer by performing anionic polymerization after catalytic polymerization using a metallocene catalyst.
Highly functional graft copolymer and method for preparing the same
This invention relates to a highly functional graft copolymer and a method of preparing the same, and more particularly, to a highly functional graft copolymer including a main chain of a highly elastic ethylene-based terpolymer including, at a predetermined molar ratio, an ethylene unit, an α-olefin unit having 6 to 12 carbon atoms, and at least one functional unit selected from the group consisting of divinylbenzene and p-methylstyrene, and a side chain of a polar polymer for imparting functionality, and to a method of preparing the highly functional graft copolymer by performing anionic polymerization after catalytic polymerization using a metallocene catalyst.
ADHESIVE FILM, OPTICAL MEMBER COMPRISING THE SAME AND OPTICAL DISPLAY COMPRISING THE SAME
An adhesive film, an optical member including the same, and an optical display including the same are provided. An adhesive film includes a (meth)acrylic copolymer including a hydroxyl group and formed of a monomer mixture including a hydroxyl group-containing (meth)acrylate and an alkyl group-containing (meth)acrylate. The adhesive film has a glass transition temperature of about −35° C. or less and allows about 50,000 cycles or more of bending before delamination between the adhesive film and a PET film, cracking, or bubble generation occurs in a specimen as described herein.
MASK BLANK, METHOD FOR MANUFACTURING MASK BLANK AND TRANSFER MASK
There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.
Treatment liquid and pattern forming method
An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49° C.