An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49° C.

One embodiment of the present invention provides a pattern forming method including a step for forming an actinic ray-sensitive or radiation-sensitive film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a step for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film using a composition for forming an upper layer film, a step for exposing a laminate film including the actinic ray-sensitive or radiation-sensitive film and the upper layer film, and a step for developing the exposed laminate film using a developer including an organic solvent. The composition for forming an upper layer film contains a resin (XA), a resin (XB) containing fluorine atoms, a basic compound (XC), and a solvent (XD), and the resin (XA) is a resin not containing fluorine atoms, or in a case where the resin (XA) contains fluorine atoms, the resin (XA) is a resin having a lower content of fluorine atoms than that in the resin (XB), based on a mass.

One embodiment of the present invention provides a pattern forming method including a step for forming an actinic ray-sensitive or radiation-sensitive film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a step for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film using a composition for forming an upper layer film, a step for exposing a laminate film including the actinic ray-sensitive or radiation-sensitive film and the upper layer film, and a step for developing the exposed laminate film using a developer including an organic solvent. The composition for forming an upper layer film contains a resin (XA), a resin (XB) containing fluorine atoms, a basic compound (XC), and a solvent (XD), and the resin (XA) is a resin not containing fluorine atoms, or in a case where the resin (XA) contains fluorine atoms, the resin (XA) is a resin having a lower content of fluorine atoms than that in the resin (XB), based on a mass.

The invention provides a composition comprising at least the following: an oil, and at least one compound selected from Compounds 1 through 3, or a combination thereof, as described herein. The composition can be used to improve the high pressure, free-radical polymerizations of ethylene-based interpolymers, and to reduce polymer build-up in reciprocation devices throughout the process.

The invention provides a composition comprising at least the following: an oil, and at least one compound selected from Compounds 1 through 3, or a combination thereof, as described herein. The composition can be used to improve the high pressure, free-radical polymerizations of ethylene-based interpolymers, and to reduce polymer build-up in reciprocation devices throughout the process.

Disclosed is a block copolymer including one or more blocks of an acrylate polymer and one or more blocks of a chloroprene polymer, wherein the number average molecular weight of the block copolymer is 110,000 or more, the number average molecular weight of the block of a chloroprene polymer is 80,000 or more in total, and the block copolymer has a functional group with a structure represented by the following chemical formula (1) or (2): ##STR00001##
wherein in the chemical formula (1), R.sup.1 represents hydrogen, chlorine, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted aryl group or a substituted, or unsubstituted heterocyclyl group.

According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.

According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.

The present invention is concerned with a reactive surfactant composition for emulsion polymerization, which is able to micronize the particle diameter of a polymer emulsion and to reduce the addition amount of the reactive surfactant composition to be used. The reactive surfactant composition for emulsion polymerization of the present invention contains a reactive anionic surfactant (component A) represented by the following formula (I): ##STR00001##
wherein AO represents an alkyleneoxy group having a carbon number of 3 or more and 18 or less; EO represents an ethyleneoxy group; p represents an integer of 1 or more and 15 or less; m′ represents an integer of 0 or more; n′ represents an integer of 0 or more; M.sup.+ represents a hydrogen ion or a cation; and plural kinds of AOs may coexist.

The present invention is concerned with a reactive surfactant composition for emulsion polymerization, which is able to micronize the particle diameter of a polymer emulsion and to reduce the addition amount of the reactive surfactant composition to be used. The reactive surfactant composition for emulsion polymerization of the present invention contains a reactive anionic surfactant (component A) represented by the following formula (I): ##STR00001##
wherein AO represents an alkyleneoxy group having a carbon number of 3 or more and 18 or less; EO represents an ethyleneoxy group; p represents an integer of 1 or more and 15 or less; m′ represents an integer of 0 or more; n′ represents an integer of 0 or more; M.sup.+ represents a hydrogen ion or a cation; and plural kinds of AOs may coexist.