The resin composition of the present invention comprises a prepolymer (P) and a thermosetting component, the prepolymer (P) being obtained by polymerizing an alkenyl-substituted nadimide (A), a maleimide compound (B), and an amino-modified silicone (C).

A method of manufacturing polyimide particles, including: combining a polyimide solution including a polyimide and an organic solvent with an aqueous solution including water in the presence of an emulsifying surfactant at a shear rate from 1,000 to 3,000 revolutions per minute, from 1,000 to 2,500 revolutions per minute, or from 1,500 to less than 2,500 revolutions per minute to form an emulsion; removing the organic solvent to form an aqueous polymer dispersion including polyimide particles; and recovering the polyimide particles, which have a spherical morphology, and a volume based D10 diameter from 3 to 50 micrometers, preferably from 3 to 45 micrometers and a volume based D90 diameter from 3 to 80 micrometers, from 3 to 75 micrometers, or from 3 to 45 micrometers and a volume based D100 diameter from 3 to 100 micrometers, from 3 to 75 micrometers, or from 10 to 75 micrometers.

A system comprises an extrusion head to selectively extrude a bead of a precursor solution onto a target road on a substrate within a build area, the precursor solution comprising a polyimide precursor compound in a solvent, an actuator coupled to the extrusion head to move the extrusion head, a control system coupled to the actuator to control the extrusion head along the target road and selectively dispense the precursor solution to the extrusion head, and an environmental system configured to accommodate the target road during fabrication, the environmental system configured to expose the dispensed precursor solution to a temperature selected to evaporate solvent from the solution to initiate polymerization of the polyimide precursor compound to form at least a portion of a polyimide part.

A composition including a polyamic acid modified with an alkoxysilane group; and an oligo silica compound, wherein the polyamic acid modified with an alkoxysilane group includes a reaction product of (i) a condensation reaction product of an acid anhydride and a diamine, and (ii) a reactive organosilane compound, wherein the oligo silica compound includes a condensation reaction product of an organosilane diol and a an alkoxysilane compound, wherein an amount of silicon atoms in the composition is less than or equal to about 15 wt % based on a total weight of solid contents in the composition.

A polymer is provided. The polymer includes a first repeating unit represented by Formula (I) and a second repeating unit represented by Formula (II):

##STR00001##

wherein Y.sub.1 and Y.sub.2 are independently H, CH.sub.3, or CH.sub.2CH.sub.3; n is an integer ranging from 1 to 25; and the molar ratio of the first repeating unit to the second repeating unit is from 5:95 to 15:45. A resin composition including the aforementioned polymer is also provided.

A laminate structure of a thin film transistor includes a thin film transistor array and a passivation layer. The thin film transistor array includes a gate, a channel layer formed on the gate, a gate insulating layer formed between the gate and the channel layer, and a source and a drain formed on both sides of the channel layer. The passivation layer is formed on the thin film transistor array, and the passivation layer has at least one contact hole exposing the source or the drain, wherein the passivation layer is an oxazole-containing photosensitive polyimide (PSPI) resin.

A photo-aligning liquid crystal aligning agent for forming a liquid crystal alignment layer capable of materializing a liquid crystal display device, which has a high transmittance while maintaining a liquid crystal aligning property, a voltage holding ratio and the like, and in which flickering is inhibited from being caused after operating for a long time. The photo-aligning liquid crystal aligning agent contains [A] polyamic acid or a derivative thereof which is synthesized by reacting tetracarboxylic acid dianhydride and diamine, and [B] polyamic acid or a derivative thereof obtained by reacting tetracarboxylic acid dianhydride having no photoreactive structure and diamine having no photoreactive structure.

A laminate structure of a thin film transistor includes a thin film transistor array and a passivation layer. The thin film transistor array includes a gate, a channel layer formed on the gate, a gate insulating layer forming between the gate and the channel layer, and a source and a drain forming on both sides of the channel layer. The passivation layer is formed on the thin film transistor array, and the passivation layer has at least one contact hole exposing the source or the drain, wherein the passivation layer is an oxazole-containing photosensitive polyimide (PSPI) resin.

The present invention provides a tetracarboxylic acid diester compound represented by the following general formula (1),

##STR00001## wherein, X.sub.1 represents a tetravalent organic group, and R.sub.1 represents a group represented by the following general formula (2),

##STR00002## wherein, the dotted line represents a bonding, Y.sub.1 represents an organic group with a valency of k+1, Rs represents a group containing at least one silicon atom, k represents 1, 2 or 3, and n represents 0 or 1. There can be provided a tetracarboxylic acid diester compound which can lead a polymer of a polyimide precursor capable of using a base resin of a negative photosensitive resin composition which is capable of forming a fine pattern and giving high resolution, a polymer of a polyimide precursor obtained by using the tetracarboxylic acid diester compound and a method for producing the same.

A composition for forming a film for a semiconductor includes: a siloxane compound (A) having a specific structure that is linear and includes an amino group selected from a primary amino group or a secondary amino group, a silicon atom, and a non-polar group bonded to the silicon atom; a silane compound (B) having a specific structure that includes an amino group selected from a primary amino group or a secondary amino group, a silicon atom, and a non-polar group bonded to the silicon atom; and a cross-linking agent (C) having a specific structure that includes at least a C(?O) OH group in a molecule thereof, and has a weight average molecular weight of from 200 to 2000. Applications of the composition are also disclosed.