Provided is a charge-transporting composition that contains: a charge-transporting substance comprising a polythiophene derivative represented by formula (1); a fluorine-based surfactant; metal oxide nanoparticles; and a solvent.

##STR00001##

(R.sup.1 and R.sup.2 are each independently a hydrogen atom, an alkoxy group having 1-40 carbon atoms, O[ZO].sub.pR.sup.e, a sulfonic acid group, or the like, or R.sup.1 and R.sup.2 bond to each other to form OYO. Y is an alkylene group having 1-40 carbon atoms, which may contain an ether bond and which may be substituted with a sulfonic acid group. Z is an alkylene group having 1-40 carbon atoms, which may be substituted with a halogen atom. p is 1 or more, and R.sup.e is a hydrogen atom, an alkyl group having a 1-40 carbon atoms, or the like.)

Disclosed herein is a membrane comprising a bonding layer; and an activation layer disposed on the bonding layer and in contact with it; where the activation layer comprises catalyst nanoparticles that are operative to decompose impurities contained in an aqueous solution to generate gas bubbles that remove a sludge disposed on the membrane. Disclosed herein too is a method of purifying an aqueous solution comprising disposing in the aqueous solution, a membrane that comprises a bonding layer and an activation layer; where the activation layer comprises catalyst nanoparticles; partitioning the aqueous solution into a concentrate portion and a filtrate portion; where the activation layer contacts the concentrate portion; and decomposing impurities contained in the aqueous solution to generate gas bubbles that remove a sludge disposed on the membrane.

A resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film wherein the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) or (1B), and an organic solvent, where Ar.sub.1 and Ar2 represent a benzene ring or naphthalene ring which optionally have a substituent; X represents a single bond or methylene group; a broken line represents a bonding arm; R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and W.sub.1 represents a hydroxyl group, an alkyloxy group having 1 to 10 carbon atoms, or an organic group having at least one aromatic ring optionally having a substituent. A composition for forming an organic film, the composition containing a polymer with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using the composition; and a polymer suitable for the composition for forming an organic film.

##STR00001##

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure. Thus, the present invention provides: a composition for forming an organic film the composition containing such a thermosetting polymer with high carbon content as to enable high etching resistance and excellent twisting resistance; a patterning process using the composition; and a polymer suitable for the composition for forming an organic film

##STR00001##

An interpenetrating network (IPN) polymer membrane material includes a soft polyurethane interspersed with a crosslinked conducting polymer. The material can be reversibly switched between its oxidized and reduced states by the application of a small voltage, 1 to 4 volts, thus modulating its diffusivity.

The present invention relates to a polar functional group-partially introduced polymer, a preparation method therefor, and an organic electronic element adopting the same. The organic electronic element of the present invention has excellent photoelectric conversion efficiency and stability and is very advantageous in commercialization, by adopting the polar functional group-partially introduced polymer of the present invention.

The present disclosure relates to a composition that includes

##STR00001##

where R.sub.1 and R.sub.2 include at least one of a hydrogen, a hydroxyl group, and/or an alkyl group, R.sub.3 and R.sub.4 include at least one of hydrogen, a hydroxyl group, an alkyl group, and/or a ketone, and 1n2000.

A tackifier comprising a resin with repeating units of formula (I) wherein R.sup.1 is a linear or branched alkylen group with 1 to 10 carbon atoms and R.sup.2 is a linear or branched, saturated or unsaturated aliphatic hydrocarbon group with up to 20 carbon atoms and a non-aromatic compound which consists to at least 50% by weight of one or more linear or branched, saturated or unsaturated aliphatic hydrocarbon groups with at least 4 carbon atoms.

##STR00001##

The disclosure relates to a composition for use in a number of applications including tires. The composition comprises a blend of a rubber component, reinforcing particulate fillers, and based on 100 parts by weight (phr) of the rubber component; from about 5 phr to about 70 phr of a terpene phenol resin having a softening point temperature in the range of from about 100 C. to about 170 C. and having a hydroxyl value in the range from about 5 to about 30. In one embodiment, the terpene phenol resin has a number average molecular weight of from about 700 Da to about 790 Da, a weight average molecular weight of from about 930 Da to about 1090 Da, and a polydispersity index of from about 1.25 to about 1.45.