The invention provides luminescent material comprising E.sub.1-wSc.sub.1-x-y-u-wM.sub.yZ.sub.uA.sub.2wSi.sub.2-z-uGe.sub.zAl.sub.uO.sub.6:Cr.sub.x, wherein: E comprises one or more of Li, Na, and K; M comprises one or more of Al, Ga, In, Tm, Yb, and Lu; Z comprises one or more of Ti, Zr, and Hf; A comprises one or more of Mg, Zn, and Ni; 0<x≤0.25; 0≤y≤0.75; 0≤z≤2; 0≤u≤1; 0≤w≤1; x+y+u+w≤1; and z+u≤2.

A wavelength converting structure is disclosed, the wavelength converting structure including a spinel type SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including AE.sub.1-x-zA.sub.z+0.5(x-y)D.sub.2+0.5(x-y)-z-u E.sub.zO.sub.4:Ni.sub.y,Cr.sub.u where AE=Mg, Zn, Co, or Be, or mixtures thereof, A=Li, Na, Cu, or Ag, or mixtures thereof, D=Ga, Al, B, In, or Sc, or mixtures thereof, and E=Si, Ge, Sn, Ti, Zr, or Hf, or mixtures thereof; where 0≤x≤1, 0<y≤0.1, 0≤z≤1, 0≤u≤0.2.

A wavelength converting structure is disclosed, the wavelength converting structure including an SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including at least one of a perovskite type phosphor doped with Ni.sup.2+, a perovskite type phosphor doped with Ni.sup.2+ and Cr.sup.3+, and a garnet type phosphor doped with Ni.sup.2+ and Cr.sup.3+.

Embodiments of the invention include a semiconductor light emitting device with a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light. The device further includes AE.sub.1-xLi.sub.2Be.sub.4O.sub.6:Eu.sub.x, wherein AE=one or more of Sr, Ba, Ca, disposed in the path of the first light. The AE.sub.1-xLi.sub.2Be.sub.4O.sub.6:Eu.sub.x absorbs first light and emits second light. In some embodiments, the first light and second light may be blue.

The invention provides a method for providing a luminescent particle (100) with a hybrid coating, the method comprising: (i) providing a luminescent core (102) comprising a primer layer (105) on the luminescent core (102); (ii) providing a main ALD coating layer (120) onto the primer layer (105) by application of a main atomic layer deposition process, the main ALD coating layer (120) comprising a multilayer (1120) with two or more layers (1121) having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer (130) onto the main ALD-coating layer (120) by application of a main sol-gel coating process, the main sol-gel coating layer (130) having a chemical composition different from one or more of the layers (1121) of the multilayer (1120).

Embodiments of the invention include a semiconductor light emitting device with a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light. The device further includes AE.sub.1-xLi.sub.2Be.sub.4O.sub.6:Eu.sub.x, wherein AE=one or more of Sr, Ba, Ca, disposed in the path of the first light. The AE.sub.1-xLi.sub.2Be.sub.4O.sub.6:Eu.sub.x absorbs first light and emits second light. In some embodiments, the first light and second light may be blue.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

A light-emitting ceramic that includes a pyrochlore type compound that contains 0.01 mol % or more of Bi with respect to 100 mol % of ABO.sub.W, and one co-added element selected from the group consisting of Mg, Ca, Zn, Sr, Ba, Sc, Ga, In, Yb, and Lu. The A site contains at least one selected from the group consisting of La, Y, and Gd in a total amount of 80 mol % or more, B contains at least Sn, and W is a positive number for maintaining electrical neutrality.

The invention relates to a mineral wool product comprising mineral fibers that is marked with an UV or IR active substance and can therefore be identified under exposure to suitable radiation.

A fluorescence temperature measurement material, a preparation method therefore and use thereof are disclosed, which belong to the technical field of fluorescence temperature sensing. The fluorescence temperature measurement material has a chemical composition of Na.sub.1-xSr.sub.xTaO.sub.3:yPr.sup.3+, x=0.1-0.2 and y=0.4%-0.6%. The fluorescence temperature measurement material is prepared by a high-temperature solid-phase method and generates blue light at 492 nm (.sup.3P.sub.0.fwdarw..sup.3H.sub.4) and red light at 610 nm (.sup.1D.sub.2.fwdarw..sup.3H.sub.4) under the excitation of 290 nm ultraviolet light. The fluorescence intensity ratio (.sup.1D.sub.2.fwdarw..sup.3H.sub.4/.sup.3P.sub.0.fwdarw..sup.3H.sub.4) of two emission peaks has an exponential function relationship with temperature, so that the fluorescence temperature measurement material can calibrate temperature and has good temperature-sensitive performance. Moreover, the fluorescence temperature measurement material has a particle size of <1 ?m, a good spatial resolution and a significant CIE color coordinate change along with temperature.